• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.376-377
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• 2006

This paper presents the characteristics of Ta-N thin film strain gauges that are suitable for harsh environemts, which were deposited on thermally oxidized Si substrates by DC reactive magnetronsputtering in an argon-nitrogen atmosphere (Ar-$N_2$ (4 ~ 16 %)). These films were annealed for 1 hr in $2{\times}10^{-6}$ Torr in a vacuum furnace with temperatures that ranged from 500 - $1000^{\circ}C$. The optimized deposition and annealing conditions of the Ta-N thin film strain gauges were determined using 8 % $N_2$ gas flow ratio and annealing at $900^{\circ}C$ for 1 hr. Under optimum formation conditions, the Ta-N thin film strain gauges obtained a high electrical resistivity, ${\rho}\;=\;768.93\;{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance, $TCR\;=\;-84\;ppm/^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12. The fabricated Ta-N thin film strain gauges are expected to be used inmicromachined pressure sensors and load cells that are operable under harsh environments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.504-509
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• 2011

The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV~6 kV to measure the conduction current for the analysis of ion current.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.183-186
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• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.13-17
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• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

• Journal of Biosystems Engineering
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• v.43 no.3
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• pp.173-184
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• 2018

Purpose: This study was conducted to investigate the mechanical and physical properties of a Korean red pepper variety for particle behavior analysis. Methods: Poisson's ratio, modulus of elasticity, shear modulus, density, coefficient of restitution, and coefficient of friction were derived for "AR Legend," which is a domestic pepper variety. The modulus of elasticity and Poisson's ratio were measured through a compression test using a texture analyzer. The shear modulus was calculated from the modulus of elasticity and Poisson's ratio. The density was measured using a water pycnometer method. The coefficient of restitution was measured using a collision test, and the static and dynamic friction coefficients were measured using a inclined plane test. Each test was repeated 3-5 times except for density measurement, and the results were analyzed using mean values. Results: Poisson's ratios for the pepper fruit and pepper stem were 0.295 and 0.291, respectively. Elastic moduli of the pepper fruit and pepper stem were $1.152{\times}10^7Pa$ and $3.295{\times}10^7Pa$, respectively, and the shear moduli of the pepper fruit and pepper stem were $4.624{\times}10^6Pa$ and $1.276{\times}10^7Pa$, respectively. The density of the pepper fruit and the pepper stem were $601.8kg/m^3$ and $980.4kg/m^3$, respectively. The restitution coefficients between pepper fruits, pepper stems, a pepper fruit and a pepper stem, a pepper fruit and plastic, and a pepper stem and plastic were 0.383, 0.218, 0.277, 0.399, and 0.148, respectively. The coefficients of static friction between pepper fruits, pepper stems, a pepper fruit and a pepper stem, a pepper fruit and plastic, and a pepper stem and plastic were 0.455, 0.332, 0.306, 0.364, and 0.404, respectively. The coefficients of dynamic friction between a pepper fruit and plastic and a pepper stem and plastic were 0.043 and 0.034, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.246-252
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• 2000

Thermoelectric properties of the $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy, prepared by mechanical alloying and hot pressing, were investigated with the variation of the hot-pressing temperature ranging from $300^{\circ}C$ to $550^{\circ}C$. Contrary to the p-type behavior of single crystal, the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy exhibited n-type conduction without addition of donor dopant. When the $Bi_2(Te_{0.85}Se_{0.15})_3$ powders were annealed in $(50{\%}\;H_2+50{\%}\;Ar)$ atmosphere, the hot-pressed specimens exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Figure-of-merit of the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy was improved by hot pressing at temperatures above $450^{\circ}C$, and the maximum value of $1.92{\times}10^{-3}/K$ was obtained for the specimen hot-pressed at $550^{\circ}C$.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.24 no.2
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• pp.120-127
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• 2012

Exploratory data analysis was carried out by using the long-term wave climate data in Sokcho coastal zone. The main features found in this study are as follows. The coefficient of variations on the wave height and period are about 0.11 and 0.02, respectively. It also shows that the annual components of the wave height and period are dominant and their amplitudes are 0.24 m and 0.56 seconds, respectively. The amount of intra-annual variation range is about two times greater than that of the inter-annual variation range. The distribution shapes of the wave data are very similar to the log-normal and GEV(generalized extreme value) functions. However, the goodness-of-fit tests based on the KS test show as "rejected" for all suggested density functions. Then, the structure of the timeseries wave height data is roughly estimated as AR(3) model. Based on the wave duration results, it is clearly shown that the continuous and maximum duration is decreased as a power function shape and the total duration is exponentially decreased. Meanwhile, the environment of the Sokcho coastal zone is classified as a wave-dominated environment.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.408-412
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• 1998

Thermoelectric properties of Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$(0.05$\leq$x$\leq$0.25) prepared by mechanical alloying and hot pressing, were investigated. Contrary to the p-type behavior of single crystals, the hot-pressed Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$ exhibited ntype conduction without addition of donor dopant. When $Bi_2(Te_{0.85}Se_{0.15})_3$powders were annealed in (50% $H_2$ + 50% Ar) atmosphere, the hot-pressed specimen exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Among the Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$fabricated by mechanical alloying and hot pressing, $Bi_2(Te_{0.85}Se_{0.15})_3$ exhibited a maximum figure-of-merit of 1.92 $\times$ $lO^{-3}$/K.