• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.87-91
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• 2017

Carbon-encapsulated Ni and metal Ni nanoparticles were synthesized by levitational gas condensation (LGC). Methane ($CH_4$) gas was used to coat the surface of the Ni nanoparticles. The Ni particles had a core diameter of 10 nm, and were covered by 2~3 nm thin carbon layers with multi-shells structure.The low magnetization comparing with the Ni nanoparticles without carbon-shell results in the coexistence of nonmagnetic carbon and a large surface spin percentage with disordered magnetization orientation for the nanoparticles. Biginelli reactions in the presence of L-proline and Ni and carbon encapsulated Ni nanoparticles were carried out to change the ratio between stereoisomers. The obtained S-enantiomers for 3,4-dihydropyrimidine (DHPM) using catalysts of Ni, and Ni@C was an excess of about ${\Delta}{\sim}7.4%$ and ${\Delta}{\sim}19.6%$, respectively. The nanopowders were fully recovered using magnet to reuse as a catalyst. The Ni@C was shown at same yield to formation of 3,4-DHPM, though it was recycled for catalyst in the reaction.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.961-968
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• 1998

In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

• Journal of the Society of Disaster Information
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• v.15 no.4
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• pp.597-606
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• 2019

Purpose: This paper is for the improvement of the safety education system in the construction industry, which has become a great threat to domestic industrial safety. Among the industrial sectors, the accident rate and death rate in the construction industry are the highest, and measures for falls in the litigation work are needed. Method: The application of the Analytic Hierarchy Process(AHP) resulted in the following conclusions. Results: The management group of the construction industry was divided into a group of on-site workers. In addition, the practical education system was reviewed by analyzing differences in perceptions of safety education. The survey results of the two groups were analyzed through AHP by dividing the construction safety education system into three layers. Conclusion: The results showed that managers showed a great deal of importance, such as actual conditions for implementation related to education, while on-site workers indicated importance for items that were somewhat site-oriented compared to managers. In addition, the two groups did not place much weight on the effectiveness of AR and VR, which have been expanding into safety education recently.

• (The)Study of the Eastern Classic
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• no.69
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• pp.531-561
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• 2017

This article's aim is to contrast Dasan's commentary with Chu-tzu' and old commentary on The Meaning of learning(學) and ming(命) in Confucius Analects analects. Confucius Analects analects began with Confucius said, " Is it not pleasant to learn with a constant perseverance and application?"(1:1), and closed with Confucius said, "Without recognizing the ordinances of Heaven, it is impossible to be a superior man. We can consider Confucian analects as theory of science. I've tried to define the meaning of learning(學) in Confucius Analects, at first. The Meaning of learning in Confucian analects have 1) Technology, 2) the way of human relation, 3) liberal ar, and 4) 'learning to become a sage. Chu-tzu defines learning(學) in Confucius Analects as 'learning to become a sage'. Dasan's considered learning(學) as science in general. Chu-tzu' and old commentary defined zhiming(知命) in Confucius Analects is 'to know the fact that there is destiny in man's life(ex, life and death). Dasan reinterpreted ming(命) in Confucius Analects as human mind-nature.

• Journal of Digital Convergence
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• v.20 no.2
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• pp.163-174
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• 2022

Despite the great interest in the metaverse from academia and industry, research so far has been focused on a specific area, and the background of the study is in the recognition that research is necessary from the perspective of the entire metaverse ecosystem. The purpose of this study was to derive the metaverse research framework and each component to study from the perspective of the metaverse ecosystem, and to study the development stage of the metaverse ecosystem. From an academic point of view, the ecosystem components were derived through the Metaverse IDC-Platform, a framework for applying Michael Porter's diamond model to the metaverse. From a practical point of view, the four components of the metaverse ecosystem interact with each other in terms of metaverse application and development. As the basis of this study, it can be used strategically because it is possible to identify areas for reinforcement in academia and industry and provide basic data for insight by closely examining the strengths and weaknesses of each component. The contribution of research is that it has created a foundation for research that has been limited to specific areas from an ecosystem perspective, unlike before.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.192-201
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• 2003

In this paper, to reduce the size of patch, three types of 3-dimensional patch antennas which are one-directionally-corrugaged type, rectangular ring-likely corrugated type, and lattice-likely corrugated type rectangular microstrip patch antennas(MPA) are designed and fabricated at the 1.575 GHz. As the result, one-directionally corrugated rectangular MPA is reduced in the resonant length of patch by 21.4% than that of general plane MPA. -10 dB bandwidth(B.W) is 62 MHz(3.9 %) and this is broader than that(39 MHz, 2.5 %) of plane MPA by 23 MHz(1.5 %). The gain is 5.8 dBd and this is reduced by 0.9 dB than that(6.7 dBd) of plane MPA. Half power beamwidth(HPBW) is broadened by 18$^{\circ}$ than that of plane MPA in the E-plane and this is due to the reduced length of patch. For rectangular ring-likely corrugated retangular MPA, the patch size is miniaturized by 21.6 % than that of plane MPA. For lattice-likely corrugated rectangular MPA, in the linear polarization, the size of patch is miniaturized by 43.3 % than that of plane MPA. -10 dB B.W is 70 MHz(4.4 %) and this is broadened than that of plane MPA by 31 MHz(2 %). Gain is 2.2 dBd and this is smaller than that of plane MPA by 4.5 dB. HPBW is increased in both E-plane and H-plane by 22$^{\circ}$ and 13$^{\circ}$, respectively. For circular polarization, the size of patch is reduced by 41 % than that by 41 %. The axial ratio(AR) is 0.8 dB at the 1.575 GHz and the axial ratio bandwidth(ARBW) within 2 dB is 20 MHz(1.27 %) and this is increased by 10 MHz(0.63 %) than that 10 MHz(0.63 %) of plane MPA. From all the results above, it is conformed that the proposed antenna has merit in size reduction of patch and in the input impedance B.W, and is more profitable in many application than the general plane type MPA.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• Journal of the Korean Society for Marine Environment & Energy
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• v.13 no.1
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• pp.18-29
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• 2010

Offshore subsurface storage of $CO_2$ is regarded as one of the most promising options to response severe climate change. Marine geological storage of $CO_2$ is to capture $CO_2$ from major point sources, to transport to the storage sites and to store $CO_2$ into the offshore subsurface geological structure such as the depleted gas reservoir and deep sea saline aquifer. Since 2005, we have developed relevant technologies for marine geological storage of $CO_2$. Those technologies include possible storage site surveys and basic designs for $CO_2$ transport and storage processes. To design a reliable $CO_2$ marine geological storage system, we devised a hypothetical scenario and used a numerical simulation tool to study its detailed processes. The process of transport $CO_2$ from the onshore capture sites to the offshore storage sites can be simulated with a thermodynamic equation of state. Before going to main calculation of process design, we compared and analyzed the relevant equation of states. To evaluate the predictive accuracies of the examined equation of states, we compare the results of numerical calculations with experimental reference data. Up to now, process design for this $CO_2$ marine geological storage has been carried out mainly on pure $CO_2$. Unfortunately the captured $CO_2$ mixture contains many impurities such as $N_2$, $O_2$, Ar, $H_{2}O$, $SO_{\chi}$, $H_{2}S$. A small amount of impurities can change the thermodynamic properties and then significantly affect the compression, purification and transport processes. This paper analyzes the major design parameters that are useful for constructing onshore and offshore $CO_2$ transport systems. On the basis of a parametric study of the hypothetical scenario, we suggest relevant variation ranges for the design parameters, particularly the flow rate, diameter, temperature, and pressure.