• Journal of Yeungnam Medical Science
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• 제26권2호
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• pp.148-155
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• 2009

Brugada syndrome is characterized by an ECG pattern of right bundle branch block and ST segment elevation in the right precordial leads ($V_1-V_3$) without structural heart disease. It is also characterized by sudden cardiac death that's caused by ventricular fibrillation. This is a familial syndrome with an autosomal dominant inheritance pattern and it may be considerably more common in Southeast Asia. Many factors during anesthesia can precipitate malignant dysrrhythmia in these patients, so careful choice of anesthetics is required. We experienced a case of Brugada syndrome in a 59-year-old male patient who was under general anesthesia for trans-sphenoidal surgery to treat a pituitary adenoma, and the patient was diagnosed as having Brugada syndrome without any untoward cardiovascular events.

• Journal of Advanced Marine Engineering and Technology
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• 제38권6호
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• pp.737-743
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• 2014

본 논문에서는 기존 1kW 할로겐 탐조등을 대체하기 위한 고출력 LED 탐조등에 관하여 기술하였다. 설계사양은 KDS 6230-1046-1과 KS V 8469를 기준으로 하였으며, 요구 광도 800,000cd를 만족시키기 위하여 지향각 $6^{\circ}$의 렌즈를 사용하였다. 시제작 LED 탐조등의 방열은 공랭식으로써 팬이나 히트파이프를 사용하지 않았다. 시험결과, 시제작 LED 탐조등의 소비전력은 148W로 1kW 할로겐 탐조등에 비해 85% 절감되었으며, 중심광도는 945,000cd로써 KS V 8469를 만족하였다. 광효율은 기존 탐조등보다 4.7배 향상되었으며, 지향각, 색온도 및 연색성은 각각 $5.4^{\circ}$, 5,500K, 70이었다. LED 탐조등의 외함 온도는 $60^{\circ}C$ 이하이고, SMPS 주변 온도는 $50^{\circ}C$ 이하로 IEC 60092-306을 만족하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.148-152
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• 2001

One set of MMIC library has been developed using gate recess etching by spin processor. It is superior than that of dipping Method in the uniformity and the reproducibility of gate recess. A DC characteristics of p-HEMT have a uniform characteristics in the whole wafer than that of dipping method. The low noise p-HEMT with the $0.6{\mu}m$ and $200{\mu}m$ of gate length and gate width, respectivily, has a uniform characteristics of Idss 130~145 mA, conductances 190~220mS/nm, and threshold voltage -0.7~-1.1V in the drain voltage of 2V.

• 한국구조물진단유지관리공학회 논문집
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• 제25권5호
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• pp.141-148
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• 2021

본 연구에서는 강재 댐퍼의 횡변형을 방지할 수 있는 기술을 검토하여, 꺽쇠형 댐퍼에 적용하였다. 실험방법은 기존 연구와 같이 록킹 거동을 적용하였다. 평가변수는 횡변형 방지 상세 없는 기존 연구결과(SV-260)와 횡변형 방지 상세가 적용된 V-1과 V-1R이다. 여기서 V-1은 횡변형 방지상세가 댐퍼 하단부에 있으며, V-1R은 횡변형 방지상세가 하단부 및 상단부에 있다. 최대 하중 발현 시, 모멘트, 변위비 및 에너지 소산능력을 SV-260을 기준으로 상대 평가한 결과, SV-260 대비 V-1 및 V-1R의 최대모멘트는 1.22배, 1.36배 증가하였으며, 최대변위비는 2.41배, 2.92배 증가하였다. 또한 에너지 소산능력도 각각 1.39배, 1.52배 증가하였다. 따라서 강재 댐퍼에 횡변형 방지 상세를 적용한 것은 적절한 것으로 평가되었다.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.145-148
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• 2009

Nucleotides are the building blocks of nucleic acids and essential for many cellular functions. In this study, ultrasonic absorption spectra of $\beta$-cyclodextrin ($\beta$-CD) and adenosine 5'-monophosphate (AMP) in aqueous solution were measured over the broad frequency range 0.1-40 MHz with emphasis on the low-frequency range below 1 MHz. Here we show that the interaction of $\beta$-CD and AMP complies with a typical spectrum of a single relaxation process. We determined reliable rate (kb) and equilibrium (K) constants and a standard volume change ($\Delta$V) of the reaction. They are $k_b=2.3{\times}{{10^{-6}}_s}^{-1},\;K=89M^{-1},\;and\;{\Delta}V=13.8(10^{-6}m^3mol^{-1})$, respectively.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2018년도 춘계 학술논문 발표대회
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• pp.147-148
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• 2018

In order to compare the electrochemical performance with that of Calomel Electrode, MnO2 solid-state-electrode was fabricated and its potential and impedance were measured in chloride aqueous solution. As a result, the SCPS without chloride ions showed a potential of -200 mV or more and an impedance over 2000 Ωcm, but the potential below -600 mV and the impedance below -200 Ωcm showed as the chloride concentration in the solution increased. It is considered electrochemical studies on the corrosion of rebar are necessary for the MOE, which shows the same tendency as SCE and exhibits electrochemical performance, over the Mortar level in the future.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.148-151
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• 2002

본 연구에서는 Ca, In, V, Al을 첨가 원소로 사용한 YIG 페라이트 분말을 분무건조기로 준구형 과립으로 만들어 일반적인 세라믹 제조 공정 방법으로 다결정 테를 제조하였고, 소결온도와 첨가원소의 조성비에 따른 YIG 페라이트의 기본물성과 전자기적 특성 변화를 조사하였다. 제조된 YIG 페라이트에 대한 기본 물성과 자기 특성을 밀도측정기, XRD, SEM, VSM, Network Analyzer 등을 이용하여 측정 분석하였다. $Y_{2.1}$C $a_{0.9}$F $e_{4.4}$ $V_{0.5}$I $n_{0.05}$A $l_{0.05}$ $O_{12}$ 조성의 YIG 페라이트에 대한 전자기적 특성 측정 결과 13$50^{\circ}C$에서 소결한 YIG 페라이트에서 우수한 삽입손실 값과 Isolation 값을 나타내였으며 이론밀도의 92%의 높은 밀도값을 가지며 높은 포화자화(4$\pi$Ms) 값을 지닌 우수한 전자기적 특성을 나타내었다.내었다.내었다.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• 한국통신학회논문지
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• 제22권4호
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• pp.685-695
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• 1997

In this paper, a new CMOS continuous-time fully-differential current-mode integrator is proposed as a basic building block of the low-voltage high frequency current-mode active filter. The proposed integrator is composed of the CMOS complementary circuit which can extend transconductance of an integrator. Therefore, the unity gain frequency which is determined by a small-signal transconductance and a MOSFET gate capacitance can be expanded by the complementary transconductance of the proposed integrator. And also the magnitude of pole and zero are increased. The unity gain frequency of the proposed integrator is increased about two times larger than that of the conventional continuous-time fully-differential integrator with NMOS-gm. These results are verified by the small signal analysis and the SPICE simulation. As an application circuit of the proposed fully-differential current-mode integrator, the three-pole Chebyshev lowpass filter is designed using 0.8.$\mu$m CMOS processing parameters. SPICE simulation predicts a 3-dB bandwidth of 148MHz and power dissipation of 4.3mW/pole for the three-pole filter with 3-V power supply.

• 천문학회지
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• 제29권1호
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• pp.43-51
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• 1996

We present test results of time-series CCD photometry to investigate the photometric precision of the BOAO (Bohyunsan Optical Astronomy Observatory) 1.8m telescope. A well-known field of the old open cluster M67, which includes two pulsating blue stragglers and two W UMa type binaries, was monitored for 3.5 hours on February 22, 1996. We have collected 148 V frames and 3 B frames. Photometric noises which consist mainly of photon noise and scintillation noise, were lowered down to about 1.9 mmag for stars of $10.\;^m5$ in M67 with exposure time of 20 seconds. From the C-M diagram for M67, a number of observational properties were derived; E(B-V) = 0.03, (V-Mv)o = 9.6, Age = 4 Gyr. We obtained light curves for four known variable stars and confirmed their variational characteristics. The pulsating blue stragglers show a low amplitude (about 0.01 mag) of light variation.