• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.553-554
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• 2006

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.220-220
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• 2008

물 첨가 열화학기상증착을 이용하여 750도에서 길고 수직 성장한 다중벽 탄소나노튜브를 합성하였다. 사용된 기판으로는 우선 실리콘 웨이퍼에 열 증착기로 확산 방지층으로 Ti 50 nm를 입히고 그 위에 Al 15 nm를 입히고 난 후 촉매 층으로 Invar 36 (63 wt% Fe, 37 wt% Ni)을 1 nm 얇게 증착하였다. 탄소나노튜브의 성장에 사용된 가스는 Ar, $C_2H_2$ 이다. Ar은 분위기 가스로 사용되었고, $C_2H_2$는 탄소나노튜브의 성장에 관여하는 가스이다. 또한, 합성중에 약간의 물을 첨가함으로 기존의 탄소나노튜브 성장 길이보다 10배 가량 더 성장 하였다. 이것은 합성 중의 물 첨가로 인해 촉매 입자들의 활동성이 기존에 비해 더 증가했다는 것을 보여준다. 합성된 탄소나노튜브의 길이와 정렬도를 보기 위해 주사전자현미경 (scanning electron microscopy, SEM)을 이용하였고, 탄소나노튜브의 지름과 벽의 개수를 파악하기 위해 투과전자현미경 (transmission electron microscopy)을 이용하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.910-913
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• 2009

This paper examines attaching speed, detaching speed and contact time which affected in the ink transfer ratio and presents the best conditions for fabrication process of electrodes with Ag-ink using microcontact printing method. In conclusion, it shows the best printing characteristic by two conditions. One of condition is the attaching speed have to within less than 1mm/s and the detaching speed is high velocity as 1000mm/s and the contact time is taken about the minimum time when inking process. Another condition is the attaching speed have to within more than 100mm/s and the detaching speed have to within less than 1mm/s and the contact time is longer than 30second when the printing process. As using these condition and the stamp sized 5cm${\times}$5cm, it was possible for printing equally until $30{\mu}m$ of width. The printed thickness of a electrode was about 300 to 500 nm, the surface roughness was about dozens nm under 50 nm.

• Journal of the Korean Solar Energy Society
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• v.22 no.4
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• pp.44-50
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• 2002

Photosynthesis of plants is effective in the range of 550 to 700 nm of the wavelength of solar irradiation. If the conversion of ultraviolet to the above mentioned region is possible, the photosynthesizing ability is expected to be enhanced. $Eu^{3+}$ doped soda-lime bulk and $TiO_2-SiO_2$ sol-gel coated glasses were prepared and their spectroscopic properties were studied. The absorption and emission spectra for the specimens were measured with the changes of wavelength and Eu ion concentration in the range of the wavelength of 300 to 700nm. The transmittance intensity of visible light through the bulk glass and the coated one was unchanged with the addition of Eu element. The emission spectrum intensity of $Eu^{3+}$ was found to be the maximum at 618 nm which is a transition of $^5DO{\rightarrow}^7F_2$. Additionally, it was shown that the intensity was linearly increased up to 10% of the Eu concentration.

• Journal of Environmental Science International
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• v.11 no.7
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• pp.757-763
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• 2002

The objective of this study is to delineate removal efficiency of the Linear alkylbenzene sulfonates(LAS) in solution by $TiO_2$ photocatalytic oxidation as a function of the following different experimental conditions : initial concentration of LAS, $TiO_2$ concentration, UV wavelength and pH of the solution. It was increased with decreasing initial concentration of LAS and with decreasing pH of the solution. Removal efficiency increased with increasing $TiO_2$ concentration but was almost the same at $TiO_2$ concentration of 2 g/L and 3 g/L, i.e., for initial LAS concentration of 50 mg/L. It was removal efficiency was 85% at 150 min in the case of $TiO_2$ concentration of 0.5 g/L but 100% after 150 min in the case of $TiO_2$ concentration of 1 g/L, 100% after 110 min in the case of $TiO_2$ concentration of 2 g/L and 3 g/L. UV wavelength affection on the removal efficiency of LAS decreased in the order of 254, 312 and 365 nm as increasing wavelength. But the removal efficiency of LAS was nearly the same at UV wavelength of 254 nm and 312 nm.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.28-34
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• 2015

By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.338-342
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• 2020

Tin oxide (SnO₂) nanocrystals are synthesized by a thermal evaporation method using a mixture of SnO₂ and Mg powders. The synthesis process is performed in air at atmospheric pressure, which makes the process very simple. Nanocrystals with a belt shape start to form at 900 ℃ lower than the melting point of SnO₂. As the synthesis temperature increases to 1,100 ℃, the quantity of nanocrystals increases. The size of the nanocrystals did not change with increasing temperature. When SnO₂ powder without Mg powder is used as the source material, no nanocrystals are synthesized even at 1,100 ℃, indicating that Mg plays an important role in the formation of the SnO₂ nanocrystals at temperatures as low as 900 ℃. X-ray diffraction analysis shows that the SnO₂ nanocrystals have a rutile crystal structure. The belt-shaped SnO₂ nanocrystals have a width of 300~800 nm, a thickness of 50 nm, and a length of several tens of micrometers. A strong blue emission peak centered at 410 nm is observed in the cathodoluminescence spectra of the belt-shaped SnO₂ nanocrystals.

• Journal of the Korean institute of surface engineering
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• v.49 no.4
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• pp.382-388
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• 2016

NiO nanoparticles were synthesized by hydrothermal method for the application to ethanol gas sensor. They were composited with $Co_3O_4$ nanoparticles to improve the sensitivity to ethanol gas. Scanning electron microscopy revealed that the synthesized NiO nanoparticles were plate-shaped with the approximate size and thickness of 60 - 120 nm and 20 nm, respectively. On the other hand, $Co_3O_4$ nanoparticles mixed with NiO was observed to be spherical with the size range of 30 - 50 nm. The sensitivities of NiO sensors composited with $Co_3O_4$ nanoparticles at an optimal ratio of 8 : 2 were enhanced to approximately 1.44 - 1.79 times as high as those of as-synthesized NiO sensors for the ethanol concentration of 10 - 200 ppm at $200^{\circ}C$. The mechanism of the improved ethanol gas sensing of the NiO sensors composited with $Co_3O_4$ nanoparticles was discussed.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.297-302
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• 2014

ZnS nanowires were synthesized in order to investigate $NO_2$ gas sensing properties. They were grown on the sapphire substrate using ZnS powders. SEM (scanning electron microscopy) showed the diameter and length of the ZnS nanowires were approximately in the range of 50 - 100 nm and a few $10s\;{\mu}m$, respectively. They were also found to be composed of Wurtzite- structured single crystals from TEM (transmission electron microscopy) analysis. $NO_2$ gas sensing performance of the ZnS nanowire was measured with electrical resistance changes caused by $NO_2$ gas with a concentration of 1-5ppm. The sensor was UV treated with an intensity of $1.2mW/cm^2$ to facilitate charge carrier transfer. The responses of the ZnS nanowires to the $NO_2$ gas at room temperature, treated with UV of two different wavelengths of 365 nm and 254 nm, are measured to be 124.53 - 206.87 % and 233.97 - 554.83%, respectively. In the current work, the effect of UV treatment on the gas sensing performance of the ZnS nanowires was studied. And the underlying mechanism for the electrical resistance changes of the ZnS nanowires by $NO_2$ gas was also discussed.