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A study on the pinch-off characteristics for Double Cate MOSFET in nuo structure (나노 구조 Double Gate MOSFET의 핀치오프특성에 관한 연구)

  • 고석웅;정학기
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.7
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    • pp.1074-1078
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    • 2002
  • In this paper, we designed double gate(DG) MOSFET structure which has main gate(MG) and two side gates(SG). We have simulated using TCAD simulator U .WOSFET have the main gate length of %m and the side gate length of 70nm. Then, u'e have investigated the pinch-off characteristics, drain voltage is changed from 0V to 1.5V at VMG=1.5V and VSG=3.0V. In spite of the LMG is very small, we have obtained a very good pinch-off characteristics. Therefore, we know that the DG structure is very useful at nano scale.

유리 기판 위에 형성된 랜덤한 분포를 가지는 나노 구조물과 OLED 소자로의 적용 가능성

  • Park, U-Yeong;Hwang, Gi-Ung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.500-500
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    • 2013
  • 특정한 유기 물질에 전류를 인가했을 때 발광을 하는 특성을 이용한 Organic Light Emitting Diode (OLED)는 뛰어난 색재현성, 적은 전력소모, 간단한 제조공정, 넓은 시야각 등으로 인해 PDP, LCD, LED에 이은 차세대 디스플레이 소자로 많은 관심을 받고 있다. 하지만 OLED는 각기 다른 굴절률을 가지는 다층구조로 되어있어 실질적으로 소자 밖으로 나오는 빛은 원래 생성된 빛의 20% 정도 밖에 되지 않는다. 이러한 광 손실을 줄이기 위해 Photonic Crystal (PC)이나 마이크로 렌즈 어레이(MLA) 부착 등과 같이 특정한 크기를 갖는 주기적인 나노 구조물을 이용한 광추출 효율 상승 방법은 특정 파장의 빛에서만 효과가 있는 한계가 있었으며 고가의 공정과정을 거쳐야 했으므로 OLED 소자의 가격 향상에 일조하였다. 이의 해결을 위해 본 연구는 유리기판 위에 랜덤한 분포를 가지는 나노 구조물 제작 공정법을 제안한다. 먼저 유리기판 위에 스퍼터로 금속 박막을 입혀 이를 Rapid thermal annealing (RTA) 공정을 이용하여 랜덤한 분포의 Island를 가지는 마스크를 제작하였다. 그 후 플라즈마 식각을 이용하여 유리기판에 나노 구조물을 형성하였고 기판 위에 남아있는 마스크는 Ultrasonic cleaning을 이용하여 제거하였다. 제작된나노구조물은 200~300 nm의 높이와 약 200 nm 폭을 가지고 있다. 제작된 유리기판의 OLED 소자로의 적용가능성을 알아보기 위한 광학특성 조사결과는 300~900 nm의 파장영역에서 맨유리와 거의 비슷한 수직 투과율을 보이면서 최대 50%정도의 Diffusion 비율을 나타내고 있고 임계각(41도) 이상의각도에서 인가된 빛의 투과율에 대해서도 향상된 결과를 보여주고 있다. 제안된 공정의 전체과정 기존의 PC, MLA 등의 공정에 비해 난이도가 쉽고 저가로 진행이 가능하며 추후 OLED 소자에 적용될 시 대량생산에 적합한 후보로 보고 있다.

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Suppression of Macrosteps Formation on SiC Wafer Using an Oxide Layer (산화막을 이용한 SiC 기판의 macrostep 형성 억제)

  • Bahng, Wook;Kim, Nam-Kyun;Kim, Sang-Cheol;Song, Geun-Ho;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.539-542
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    • 2001
  • In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

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Characterization of a Crystallized ZnO/CuSn/ZnO Multilayer Film Deposited with Low Temperature Magnetron Sputtering

  • Kim, Dae-Il
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.5
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    • pp.169-172
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    • 2009
  • The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

Photoluminescence Characteristics of $Y_3Al_5O_{12}:Eu^{3+}$ Nano-Phosphors by Combustion Method (연소합성법으로 제작한 $Y_3Al_5O_{12}:Eu^{3+}$ 나노형광체의 광학적 특성)

  • Kwak, Hyun-Ho;Kim, Se-Jun;Park, Yong-Seo;Choi, Hyung-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.406-407
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    • 2008
  • For this study, Yttrium aluminum garnet (YAG) particles doped $Eu^{3+}$ ions were prepared via the combustion process using the 1:1 ratio of metal ions to reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various YAG peaks, with the (420) main peak, appeared at all sintering temperature XRD patterns. The YAG phase crystallized with results that are in good agreement with the JCPDS diffraction file 33-0040. The SEM image showed that the resulting YAG:Eu powders had larger sizes with the increse in the sintering temperature. The grain size was about 50nm at $1000^{\circ}C$. The PL intensity of $Eu^{3+}$ has the line peaks of 598, 610, 632nm and has main peak at 591nm.

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Development of the Nanofluidic Filter and Nanopore Micromixer Using Self-Assembly of Nano-Spheres and Surface Tension (나노구체의 자기조립 성질과 표면장력을 이용한 나노유체필터 및 나노포어 마이크로믹서)

  • Seo, Young-Ho;Choi, Doo-Sun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.9
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    • pp.910-914
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    • 2007
  • We present a simple and an inexpensive method for the fabrication of a nano-fluidic filter and a nano-pore micromixer using self-assembly of nano-spheres and surface tension. Colloid-plug was formed by surface tension of liquid in a microchannel to fabricate nanofluidic filter. When colloid is evaporated, nano-spheres in a colloid are orderly stacked by a capillary force. Orderly stacked nano-spheres form 3-D nano-mesh which can be used as a mesh structure of a fluidic filter. We used silica nano-sphere whose diameter is $567{\pm}85nm$, and silicon micro-channel of $50{\mu}m$-diameter. Fabricated nano-fluidic filter in a micro-channel has median pore diameter of 158nm which was in agreement with expected diameter of the nano-pore of $128{\pm}19nm$. A nano-pore micromixer consists of $200\;{\mu}m-wide,\;100\;{\mu}m-deep$ micro-channel and self-assembled nano-spheres. In the nano-pore micromixer, two different fluids had no sooner met together than two fluids begin to mix at wide region. From the experimental study, we completely apply self-assembly of nano-spheres to nano-fluidic devices.

Indium Tin Oxide (ITO) Coatings Fabricated using Nanoparticle Slurry and Sol

  • Cheong, Deock-Soo;Yun, Dong-Hun;Kim, Dong-Hwan;Han, Kyoung-R.
    • Journal of the Korean Ceramic Society
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    • v.48 no.6
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    • pp.516-519
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    • 2011
  • Indium tin oxide (ITO) coatings were made using an ITO slurry and an ITO sol. This was achieved by dispersing nanosized ITO powder in a mixed solvent without any dispersant and developing an adhesive ITO sol from indium acetate and tin tetrachloride in a mixture of DMF and n-butanol. Coating was carried out in one step by spin coating an ITO slurry, which was then followed by an ITO sol over it. Here, the sol penetrates into the nano ITO particle layers to make them adhere to each other as well as to a glass substrate. This is then followed by sintering at 500$^{\circ}C$ for 1 h to produce a uniform film consisting of ITO particles of about 50 nm and 10 nm. ITO films were obtained with sheet resistances from 450 to 1500 ohm/${\Box}$ by varying spin speed and concentration. Transmittance is higher than 90% at 550 nm.

Classification and Condensation of Nano-sized Airborne Particles by Electrically Tuning Collection Size (포집크기의 전기적 튜닝 기술을 이용한 나노크기의 공기중 입자 분류 및 수농도 응축)

  • Kim, Yong-Ho;Kwon, Soon-Myoung;Park, Dong-Ho;Hwang, Jung-Ho;Kim, Yong-Jun
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1874-1879
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    • 2008
  • It is not easy to detect nano-sized airborne particles (< 100 nm in diameter) in air. Therefore, the condensation of the nanoparticles alongside of the size-classification is needed for their detection. This paper proposes a hybrid (aerodynamic+electrical) particle classification and condensation device using a micro virtual impactor (${\mu}VI$). The ${\mu}VI$ can classify the nanoparticles according to their size and condense the number concentration of nanoparticles interested. Firstly, the classification efficiency of the ${\mu}VI$ was measured for the particles, polystyrene latex (PSL), ranging from 80 to 250 nm in diameter. Secondly, the nanoparticles, NaCl of 50 nm in diameter, were condensed by 4 times higher. In consequence, the output signal was amplified by 4 times (before condensation: 4 fA, after condensation: 16 fA). It is expected that the proposed device will facilitate the detection of nanoparticles.

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Analysis of the MOSFET Transport Characteristics using MicroTec Tool (MicroTec을 이용한 MOSFET 전송 특성 분석)

  • Han, Ji-Hyung;Jung, Hak-Kee;Lee, Jae-Hyung;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2008.10a
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    • pp.596-599
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    • 2008
  • 본 연구에서는 MicroTec을 이용하여 MOSFET 전송 특성을 분석하였다. MicroTec의 Semsim은 디바이스 시뮬레이터로써 입력 바이어스에 의해 공정 시뮬레이션인 SiDif와 디바이스 조립인 MergIC에 의해 소자를 시뮬레이션 한다. 소자에 대한 스케일링은 정전압 스케일링을 사용하였고, 채널의 길이는 100nm, 50nm, 25nm로 변화하면서 비교 분석하였다. MicroTec의 이동도 모델중 Lombardi, Constant, Yamaguchi 모델을 선택하여 이동도 모델을 비교하였다. 전류-전압 특성 곡선을 비교하였을때 Lombardi 모델과 Yamaguchi 모델보다 Constant 모델에서 결과값이 높게 나타는 것을 알 수 있었다. 또한 MicroTec의 유용성을 조사하여 시뮬레이터로서 적합함과 나노구조 소자의 스케일링 이론의 적합함을 보았다.

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Electrical Properties and Synthsis of Large Area Conductive Nano Carbon Films by Linear Ion Beam Source

  • Yeo, Gi-Ho;Sin, Ui-Cheol;Yu, Jae-Mu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.220.1-220.1
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    • 2014
  • 본 연구에서는 PECVD 공법 중에 이온화 에너지가 높은 선형이온빔 소스를 이용하여 고온에서 전도성 카본박막을 코팅하였다. 카본 박막 코팅을 위한 Precursor는 $C_2H_2$ gas를 이용하였으며, 온도에 따른 카본 박막의 전기적 특성 및 두께에 따른 카본 박막 성장 구조를 분석하였다. 카본 박막의 전기적 특성은 Interfacial contact resistance (ICR) 방법으로 측정하였으며, 접촉 저항 측정을 위한 모재는 SUS316L stainless steel을 사용하였고 카본 박막 성장 구조 분석을 위해서는 폴리싱된 Si-wafer를 사용하였다. 선형이온빔 소스를 이용하여 상온에서 증착한 카본 코팅의 접촉저항 값은 50 nm 코팅 두께에서 $660m{\Omega}cm^2@10kgf/cm^2$으로 비정질상의 특성을 나타냈으며, 고온에서는 $14.8m{\Omega}cm^2@10kgf/cm^2$으로 온도가 증가함에 따라 비정질상의 카본 박막이 전도성을 가지는 카본박막으로의 성장을 확인할 수 있었다. 또한 전도성 카본 박막의 성장 구조 분석은 FE-SEM 및 Raman spectrum 분석을 통해 확인하였으며, 그 결과 코팅 두께가 증가할수록 카본 입자들은 수nm에서 약 150 nm의 카본 cluster를 형성하며 성장하였다. 이때 전도성 카본 박막의 두께에 따른 접촉저항의 값은 고온 조건에서 카본 박막의 두께가 약 100 nm일 때, $12.1m{\Omega}cm^2@10kgf/cm^2$의 가장 낮은 값을 가졌다. 위의 결과를 경제성이 아주 우수한 대면적 전도성 나노 카본 박막의 상용화 가능성이 높아질 것으로 기대된다.

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