• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.1-7
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• 2010

The device performances of accumulation-mode Pi-gate pMOSFETs with different fin widths have been characterized at high operating temperatures. The device fin height is 10nm and fin widths are 30nm, 40nm, and 50nm. The variation of the drain current, threshold voltage, subthreshold swing, effective mobility, and leakage current have been investigated as a function of operating temperatures. The drain current at high temperature is slightly larger than at room temperature. The variation of the threshold voltage as a function of the operating temperature is smaller than that of the inversion-mode MOSFETs. The effective mobility is decreased with the increase of operating temperature. It is observed that the effective mobility is enhanced as the fin width decreases.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.41-44
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• 2014

Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) ($Alq_3$) (60 nm)/Al(100 nm). We investigated the luminescence properties of $Alq_3$ which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD/$Alq_3$/Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.331-337
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• 2003

This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.39.1-39.1
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• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.899-903
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• 2013

We investigated the luminescence properties of $Alq_3$ in the device structure of ITO/CuPc/TPD/$Alq_3$/Al. The CuPc as a hole-injection material and TPD as hole-transport material. Emission properties were measured by varying a layer thickness of CuPc (0 nm to 50 nm), which is the hole-injection layer. As a result, it was found that the hole injection occurs smoothly when the layer thickness was 20 nm among the thicknesses from 0 nm to 50 nm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.690-692
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• 2003

In this paper, we have investigated characteristics of radio frequency for double gate MOSFET with 50nm main gate in according to variation of side gate length. We could know the increasement of cut-off frequency as the side gate length is lower. As a result, we could know the most optimum performance characteristics when side gate length was 70nm. In this time, the DG MOSFET of side gate with 70nm has very high cut-off frequency like 41.4GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.55-59
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• 2010

In this study, we developed nonvolatile residue (NVR) real-time monitoring system to measure the nonvolatile residue particle in ultra pure water (UPW). This device has a capability of measuring 4 different channels, i.e., 10 nm, 30 nm, 50 nm, and 100 nm. Until now, the light scattering method to detect RAE(residue after evaporation) was the only choice. However, this method can detect RAE larger than ca. 50 nm. In ultra pure water, RAE particles are usually very small and hard to detect with conventional laser scattering devices. To detect very small RAEs, a new system is developed and tested. The system consists of an atomizer that generates RAE particles and a four channel condensation particle counter (CPC). During the several months' operation in manufacturing line, the system was successfully tested and showed reliable results.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1023-1024
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• 2006

Al-8Fe-2Mo-2V-1Zr alloys were prepared by the gas atomization/hot extrusion and the melt spinning/hot extrusion. For the gas atomized and extruded alloy, equiaxed grains with the average size of 400 nm and finely distributed dispersoids with their particle sizes ranging from 50nm to 200nm were observed. For the melt spun and hot extrusion processed alloy, refined microstructural feature consisting of equiaxed grains with the average size of 200nm and fine dispersoids with their particle sizes under 50nm appeared to exhibit a difference in microstructure. Strength of the latter alloy was higher than that for the former alloy up to elevated temperatures.

• KSBB Journal
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• v.27 no.1
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• pp.45-50
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• 2012

In this paper, we investigated the effect of nanostructure on the cell behaviors such as adhesion and growth rate. Nanoporous structures with various diameters (30, 40, 45, 50, 60 nm) and 500 nm of the depth were fabricated using the anodizing method. The water contact angle of the surface consisting of nanopores with 30 nm diameter was 40 degree and those were 60~70 degree in cases of nanopores with over 40 nm diameter. Hela cells were cultivated on various nanoporous structure surface to investigate the cell behavior on nanostructure. As a result, Hela cells preferred 30 nm diameter nanoporous surface that has lower water contact angle. This result was confirmed by protein adsorption experiment and scanning electron microscope investigation.