Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electroluminescent Properties of Organic Light-emitting Diodes with Hole-injection Layer of CuPc

  • Lee, Jung-Bok (Department of Electronic Engineering, Gachon University) ;
  • Lee, Won-Jae (Department of Electronic Engineering, Gachon University) ;
  • Kim, Tae-Wan (Department of Physics, Hongik University)
  • Received : 2013.12.05
  • Accepted : 2013.12.30
  • Published : 2014.02.25
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Abstract

Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) ($Alq_3$) (60 nm)/Al(100 nm). We investigated the luminescence properties of $Alq_3$ which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD/$Alq_3$/Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.

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