• 제목/요약/키워드: 5.9 GHz

검색결과 787건 처리시간 0.029초

소결온도에 따른 $0.9MgTiO_3-0.1SrTiO_3$ 세라믹스의 구조 및 마이크로파 유전특성 (Structural and Microwave Dielectric Properties of the $0.9MgTiO_3-0.1SrTiO_3$ Ceramics with Sintering Temperature)

  • 최의선;이문기;류기원;배선기;이영희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권5호
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    • pp.294-298
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    • 2000
  • The $MgTiO_3\; and \;$0.9MgTiO_3-0.1SrTiO_3$ ceramics were fabricated by the conventional mixed-oxide method. The sintering temperature and time were $1300^{\circ}C~1600^{\circ}C$, 2hr., respectively. The structural and microwave dielectric properties were investigated with sintering temperature and the application for the satellite communication microwave dielectric resonator was investigated. The coexistence of cubic $SrTiO_3$ and hexagonal TEX>$MgTiO_3$ structures in $0.9MgTiO_3-0.1SrTiO_3$ ceramics were found from X-ray diffraction patterns. In the case of $MgTiO_3$ ceramics, sphere phase and needle-like phase were coexisted. The $0.9MgTiO_3-0.1SrTiO_3$ ceramics observed sphere phase. The dielectric constants and temperature coefficient of resonant $frequency(\tauf)$ were increased with addition of $SrTiO_3$ but the quality factor was decreased. The dielectric constant, quality factor and $\tau$f of the;$0.9MgTiO_3-0.1SrTiO_3$ ceramics were 22.61, 10.928(at 1GHz) and $+50.26ppm/^{\circ}C$, respectively.

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Fabrication and Characterization of Tunable Bandpass Filter using BST Thin Films

  • Kim, Il-Doo;Kim, Duk-Su;Park, Kyu-Sung;Kim, Ho-Gi
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.581-584
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    • 2002
  • In this work, a CPW resonator was designed and fabricated to investigate the basic microwave properties, such as effective dielectric constant, of BST thin films. Their properties were used as basic data to simulate and design CPW tunable bandpass filter. We also report on gold/$Ba_{0.5}Sr_{0.5}TiO_3$(BST) ferroelectric thin film C-band tunable bandpass filters(BPFs) designed and fabricated on magnesium oxide substrates using CPW structure. The 2 pole filter was designed for a center frequency of 5.88 GHz with a bandwidth of 9 %. The BST based CPW filter offers a high sensitivity parameter as well as a low loss parameter. The tuning range for the bandpass filter with CPW structure was determined to be 170 MHz.

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IDC 패턴에 따른 BST 전기적 특성 (Electrical Characterization of BST Thin Film by IDC pattern)

  • 노지형;김성수;송상우;김지홍;고중혁;문병무
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.200-200
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    • 2008
  • This paper reports on electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for I hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function fo electric field (${\pm}40$ KV/cm) at room temperature using interdiigitated Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the finger paris was increased onto $Al_2O_3$, the capacitance increased. The capacitance of 5 pairs finger was 0.3pF and 10 pairs finger was 0.9pF.

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광대역 고조파 제거를 위한 고온초전도 저역통과필터의 제작 (Fabrication of high-temperature superconducting low-pass filter for broad-band harmonic rejection)

  • 한석길;강광용;안달;서준석;최춘근;김상현;곽민환
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.193-196
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    • 2000
  • A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band. The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method has a cutoff frequency of 0.9 CHz with a 0.01 dB ripple level. The coupled line type low-pass filter with strip line configuration was fabricated by using a high-temperature superconducting (HTS : YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on MgO(100) substrate. Since the HTS coupled tine type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 6.2 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency.

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Microwave Negative Group Delay Circuit: Filter Synthesis Approach

  • Park, Junsik;Chaudhary, Girdhari;Jeong, Junhyung;Jeong, Yongchae
    • Journal of electromagnetic engineering and science
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    • 제16권1호
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    • pp.7-12
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    • 2016
  • This paper presents the design of a negative group delay circuit (NGDC) using the filter synthesis approach. The proposed design method is based on a frequency transformation from a low-pass filter (LPF) to a bandstop filter (BSF). The predefined negative group delay (NGD) can be obtained by inserting resistors into resonators. To implement a circuit with a distributed transmission line, a circuit conversion technique is employed. Both theoretical and experimental results are provided for validating of the proposed approach. For NGD bandwidth and magnitude flatness enhancements, two second-order NGDCs with slightly different center frequencies are cascaded. In the experiment, group delay of $5.9{\pm}0.5ns$ and insertion loss of $39.95{\pm}0.5dB$ are obtained in the frequency range of 1.935-2.001 GHz.

Phase Evolution, Thermal Expansion, and Microwave Dielectric Properties of Cordierite-Al2O3 Composite

  • Kim, Shin;Song, Eun-Doe;Hwang, Hae-Jin;Lee, Joo-sung;Yoon, Sang-Ok
    • 한국전기전자재료학회논문지
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    • 제34권5호
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    • pp.337-341
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    • 2021
  • Phase evolution, thermal and microwave dielectric properties of cordierite-Al2O3 composite were investigated. As the content of Al2O3 increased, mullite, sapphirine, and spinel were formed as secondary phases, implying that cordierite may be decomposed by the reaction with Al2O3. All sintered specimens exhibited dense microstructures. The densification occurred through liquid phase sintering. As the content of Al2O3 increased, the thermal expansion coefficient and the dielectric constant increased, whereas the quality factor decreased. The thermal expansion coefficient, the dielectric constant, and the quality factor of the 90 wt% cordierite 10 wt% Al2O3 composite sintered at 1,425℃ were 2.9×10-6 K-1, 5.1, and 34,844 GHz, respectively.

폴디드 구조를 이용한 마이크로스트립 안테나의 소형화 (Miniaturization of Microstrip Antenna Using the folded Structure)

  • 허희무;장연정;우종명
    • 한국전자파학회논문지
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    • 제16권5호
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    • pp.526-533
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    • 2005
  • 본 논문에서는 GPS 중심 주파수 1.575 GHz에서 마이크로스트립 안테나의 공진 길이 방향 양끝을 접거나 또는 네 방향 끝을 패치 아래로 모두 접어들이는 방법으로 선형 편파와 원형 편파 마이크로스트립 안테나의 소형화시키는 방법을 제시하고 설계, 제작하였다. 먼저 선형 편파의 경우, 마이크로스트립 안테나를 수직으로 내린 구조로써 안테나의 가시 길이를 $31.7\%(\varepsilon_r=1.06)$ 단축시켰으며, 이러한 접혀진 상태의 안테나를 다시 한번 안테나의 중심방향으로 접어 넣는 구조로 선형 편파 마이크로스트립 안테나를 구현하였다 그 결과 안테나의 가시 길이 단축율은 $73.6\%$이었으며 이득 5.12 dBd를 얻었다 -10 dB bandwidth는 $64MHz(4\%)$이고, E-plane과 H-plane의 HPBW는 각각 $151^{\circ},\;79.2^{\circ}$이었다. 또한 원형 편파의 경우, 네 방향 모두 선형 편파 안테나의 폴디드 구조를 적용시켰으며 접혀 넣어진 밑면의 면적 활용도를 높이기 위해 삼각형 구조로 설계하였다. 이때 안테나의 가시 면적 축소율은 $72.5\%$이었으며, 이득은 3.96 dBd이었다. -10 dB bandwidth는 $84 MHz(5.3\%)$, E-plane과 H-plane의 HPBW는 각각 $80.6^{\circ}$$82.1^{\circ}$이었다 이 결과들로부터, 선형 편파와 원형 편파의 폴디드 마이크로스트립 안테나가 일반적인 마이크로스트립 패치 안테나의 특성을 유지하면서 소형화되었기 때문에 본 논문에서 제안된 구조가 소형화에 적합함을 확인할 수 있었다.

X-band용 MMIC 오실레이터 설계연구 (Studies on MMIC oscillator using HBT for X-band)

  • 채연식;안단;이진구
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 하계종합학술대회논문집
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    • pp.387-390
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    • 1998
  • In this paper, HBT's with lower phase noise and passive elements, such as resistors, capacitors and inductors, for resonance and impedance matching networks are designed, fabricated, tested, and carefully analysed, respectively, and then, they are integrated for the design and fabrication of functional X-band oscillators with lower phase noise. Epi-wafers for HBT's with the structure of graded $Al_{x}$G $a_{1-x}$ As emitter and C-doped base layer of 700.angs. thick were used to specially emphasize the improvement of $f_{T}$ and $f_{max}$, and the lowering of phase noise, in design aspects. At the test frequencies of 12GHz, capacitances of MIM capacitors, spiral inductor, and resistances are 0.5~10pF, 0.4~11.06nH, and 20~1,380.ohm., respectively. The emitter size of HBY's for the X-band MMIC oscillators is 3*10u $m^{2}$, and find chip size is 0.9*0.9m $m^{2}$..EX>.

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The Analysis of Protection Ratio and Its Effect of Interference-to-Noise Ratio for Digital Microwave System with Diversity

  • Suh Kyoung-Whoan;Jang Won-Gyu
    • Journal of electromagnetic engineering and science
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    • 제6권3호
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    • pp.189-195
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    • 2006
  • In this paper, the derivation of the protection ratio for the digital microwave system with diversity is newly suggested for a basic guidance of initial planning for frequency coordination, and computational results are presented for an actual radio frequency band. The net filter discrimination has been also examined to see the effect of the adjacent channel protection ratio caused by adjacent channel interference. In addition, the protection ratios for the space or frequency diversity system are analyzed in terms of diversity improvement factors to find out an equivalent allowable noise-to-interference ratio (N/I) from degraded fade margin. According to results for 6.2 GHz system, with the space diversity of 25 m distance between antennas or the frequency diversity of ${\Delta}f/f=0.05$, under 64-QAM and 60 km at BER $10^{-6}$, the protection ratio can be greatly reduced in comparison to the non-diversity system. So, assuming that only the same protection ratio as the non-diversity system is kept, it is shown that the system with diversity may get more interference level of N/I allowing from 9.0 to - 5.9 dB or from 6.0 to - 4.3 dB for the space or frequency diversity. In consequence, it is concluded that the diversity system is more robust or tolerable for interferences or fades, which may play an important role in overcoming N/I to some extent.

A 45 nm 9-bit 1 GS/s High Precision CMOS Folding A/D Converter with an Odd Number of Folding Blocks

  • Lee, Seongjoo;Lee, Jangwoo;Song, Minkyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권4호
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    • pp.376-382
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    • 2014
  • In this paper, a 9-bit 1GS/s high precision folding A/D converter with a 45 nm CMOS technology is proposed. In order to improve the asymmetrical boundary condition error of a conventional folding ADC, a novel scheme with an odd number of folding blocks is proposed. Further, a new digital encoding technique is described to implement the odd number of folding technique. The proposed ADC employs a digital error correction circuit to minimize device mismatch and external noise. The chip has been fabricated with 1.1V 45nm Samsung CMOS technology. The effective chip area is $2.99mm^2$ and the power dissipation is about 120 mW. The measured result of SNDR is 45.35 dB, when the input frequency is 150 MHz at the sampling frequency of 1 GHz. The measured INL is within +7 LSB/-3 LSB and DNL is within +1.5 LSB/-1 LSB.