• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1595-1599
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• 2001

In this paper, we have desired and implemented of ASK modulator MMIC operating at 5.8 GHz for OBE used in AGPS(Automatic Gate Passing System). The proposed ASK modulator MMIC was implemented to apply a single supply voltage of 3 V to the drain in order to decrease ACP(Adjacent Channel Power). As a result, it is exhibits a broad linear modulation range from 0.7 V to 3 V and an On/off characteristic over 40 dB. The layouts of ASK modulator MMICs was designed and fabricated by using ETRI 0.57m MESFET library The chip size was 1.0mm $\times$x1.0mm.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.6
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• pp.23-29
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• 1981

By using a slot-line in combination with microstrip lines, a coplanar wide-band balun is designed and fabricated. The slot-line of balun junction is compensated to be operated in C-band(4~8GHz), and therefore the results are agreement with theoritical prediction. Experimental data are given for a 3-section Chebyshev transformer-matched balun with a balanced-to-unbalanced line impedance ratio of 2 : 1. A bandwidth from 3.5GHz to 7.0GHz is obtained with V.S.W.R. of below 1.2 : 1. Maximum insertion loss is measured as 0.9dB, and the phase difference varies linearlly within 180$^{\circ}$$\pm$5$^{\circ}$.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.2
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• pp.1-6
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• 2011

In this paper, an 1.5Gbit/s wireless data transmission system using the carrier frequency of 300 GHz band was implemented. The RF front-end was composed of schottky diode sub-harmonic mixer, frequency tripler, and horn antennas for transmitter and receiver, respectively. The LO frequencies of sub-harmonic mixer are 150GHz for transmit chain and 156GHz for receive chain. The ASK(Amplitude Shift Keying) modulation was used in the transmitter and the envelope detection method was used in the heterodyne receiver. The conversion loss of sub-harmonic mixer and implementation system loss were measured to be 9.8dB and 1.2dB, respectively. The 1.5Gbit/s video signal with HD-SDI format was transmitted over wireless distance of 40cm without optical lens(4.2m with optical lens) and displayed on HDTV at the transmitted average output power of $20{\mu}W$.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.66-70
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• 2016

This paper presents an 24 GHz I/Q LO generator for a heartbeat measurement radar system. In order to improve the mismatch performance between I and Q LO signals against process variation, a 24 GHz I/Q LO generator employing a low-pass phase shifter and a high-pass phase shifter composed of inductors and capacitors is proposed. The proposed 24 GHz I/Q LO generator consists of an LO buffer, a low-pass phase shifter and a high-pass phase shifter. It was designed using a 65 nm CMOS technology and draws 8 mA from a 1 V supply voltage. The proposed 24 GHz I/Q LO generator shows a gain of 7.5 dB, a noise figure of 2.3 dB, 0.1 dB gain mismatch and $4.3^{\circ}$ phase mismatch between I and Q-path against process and temperature variations for the operating frequencies from 24.05 GHz to 24.25 GHz.

• 한국ITS학회:학술대회논문집
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• 2008.11a
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• pp.386-390
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• 2008

• 한국ITS학회:학술대회논문집
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• 2008.11a
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• pp.176-180
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• 2008

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5B
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• pp.985-991
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• 2000

In this paper, the optimum structure of 2GHz magnetic thin film planar inductor were designed and fabricated to reduce the inductor area and to maximize the inductance L and quality factor Q of the inductor. The optimum design was performed utilizing Co90Fe10 layer multilayered with SiO2 layers to avoid the eddy-current skin effect and considering new lumped element model. New magnetic thin film inductors operating at 2GHz were fabricated on a Si substrate utilizing photo-lithography and lift-off techniques. The frequency characteristics of L, Q, and impedance in more than fifty identical inductors were measured using an RF Impedance Analyzer(HP4291B with HP16193A test fixture). The self-resonant frequencies(SRF) of the inductors were measured by a Vector Network Analyzer(HP8510). The developed inductors have SRF of 1.8 to 2.3GHz, L of 47 to 68nH, and Q of 70 to 80 near 1GHz. Finally, high frequency, high performance, planar micro-inductor(area=30.8 x 30.8il$^2$) with maximized L and Q were fabricated succefully.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.755-758
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• 2003

본 논문에서 단거리전용통신(DSRC)용 OBE에 사용되는 5.8GHz 송신측 ASK와 PA를 one-chip화하여 MMIC로 설계를 및 제작하였다. 설계된 ASK-PA는 3V 단일 공급전원을 사용하였고, 능동 소자로서 GaAs MESFET을 사용하였다. ASK는 회로의 복잡도를 줄이기 위해 직접변조 방식을 채택하였고, 인접채널 간섭의 영향을 줄이기 위하여 드레인 제어 변조회로를 사용하였다. 또한 전력증폭기는 2단으로 하여 AB급으로 동작하도록 전압분배 바이어스회로로 구성하였다. 측정결과 3V의 공급전압에서 전체이득 20.63dB, 송신출력 7.8dBm으로 나타냈다. 공정은 ETRI 0.5㎛ GaAs MESFET 공정을 사용하였고, Chip size는 1.2mm×l.4mm이다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.13 no.4
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• pp.360-368
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• 1988

A 14 to 14.5 GHz low noise MIC amplifier is designed on the $Al_2$$O_3$ substrate. The amplifier which uses a GaAsMESFET developed at COMSAT Laboratories has been designed and optivized to have gain greater than 7dB and noise figure less than 2dB using Super-Compact program. Experimental results show that the gain of the amplifier is 7 to 7.7 dB, while noise figure is 3.8 to 4.3dB through the desired band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1591-1597
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• 2003

In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.