• Journal of Advanced Navigation Technology
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• v.27 no.4
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• pp.463-468
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• 2023

In this paper, we proposed reconfigurable dual polarization patch array antenna that can select two polarizations(Vertical, RHCP) using defected ground structure and Pin diode. The proposed antenna was designed arranging a circular polarization patch antenna implemented with a square microstrip patch and two slots 3x3 at 25.8mm placed, a half-wavelength of 5.8 GHz. Conect the pin diode and the capacitor to the slot diagonally placed on the ground of each antennas, and select polarization using the open/short operating according to the application of DC voltage to the pin diode. As a result of the design, the gain of the antenna is 11.7 dBi at vertical polarization and 11.6 dBic at RHCP. The axial ratio is 20.3 dB at 1.8 dB vertical polarization at RHCP. Mutual Coupling is Maximum to -20.8 dB for vertical polarization and Maximum to -30.1 dB for RHCP.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.4
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• pp.43-47
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• 2024

This paper introduces a phased-array single-channel transceiver beamformer IC built using 65nm CMOS technology, covering the 8-16 GHz range and targeting the X and Ku bands for radar and satellite communications. Each signal path in the IC features a low noise amplifier (LNA), power amplifier (PA), phase shifter (PS), and variable gain amplifier (VGA), which allow for phase and gain adjustments essential for beam steering and tapering control in typical beamforming systems. Test results show that the phase-compensated VGA offers a gain range of 15 dB with 0.25 dB increments and an RMS gain error of 0.27 dB. The active vector modulator phase shifter delivers a 360° phase range with 2.8125° steps and an RMS phase error of 3.5°.

• Journal of electromagnetic engineering and science
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• v.5 no.3
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• pp.122-125
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• 2005

This paper describes a design of a miniature patch antenna and its 4-channle array for 5.25 GHz wireless LAN band. Each patch element is designed for the low mutual coupling between each element and for the small size of the array antenna. The size of the each element is $7 mm{\times}14.5 mm{\times}5.6 mm$ and it satisfy IEEE 802.11a frequency band. It is arrayed for independent 4-channel operation. The total size of the array antenna is $35.6 mm{\times}52.5 mm{\times}5.6 mm$. The measured reflection coefficients and the radiation patterns of the fabricated antennas show the reasonable agreements with prediction.

• Journal of the Korean Institute of Navigation
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• v.25 no.4
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• pp.455-460
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• 2001

본 연구에서는 방향성 결합기의 특성과 PIN다이오드의 특성을 이용하여 가변 감쇠기를 구현하였다. 기존의 Even-Odd Mode해석법이 아닌 간단한 2-port 기법으로 감쇠기를 분석하였으며, 산란 파라미터는 결합포트의 종단 임피던스가 동일한 경우와 동일하지 않은 경우에 있어서의 감쇠기의 동작특성을 평가하였다. 방향성 결합기의 결합포트는 가변종단을 HP사의 전류제어 소자인 HSMP-3864 PIN다이오드를 사용하였다. 구현된 가변감쇠기는 PCS 송신주파수 1.9 GHz에서 감쇠 범위가 30 dB 이상, 삽입손실 5 dB 이하, 입·출력 반사계수 -25 dB 이하의 특성을 나타내었으며, 이는 PCS와 셀룰러 이동통신 기지국용 전력 증폭기를 온도 등과 같은 외부의 환경변화에 따라서 이득을 가변 시킬 수 있으며, 또한 증폭기의 선형성을 향상시킬 것으로 사료된다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.1-4
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• 2005

A four-channel photoreceiver ways have been realized in a 0.8$\mu$m Si/SiGe HBT technology for the applications of parallel optical interconnects. The receiver array includes four-channel transimpedance amplifiers (TIAs) and p-i-n photodiodes, where the TIAs exploit a common-emitter (CE) input configuration. Measured results demonstrate that the four-channel CE TIA array provides 3.9GHz bandwidth, 62dB$\Omega$ transimpedance gain, 7.5pA/sqrt(Hz) average noise current spectral density, and less than -25dB crosstalk between adjacent channels with 40mW power dissipation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.6A
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• pp.833-838
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• 2000

In this paper, a novel type of wideband single-patch microstrip antenna using the reactive-loading technique is presented. We demonstrated that, by inserting stubs at both of the radiating edges, the frequencies of the two resonant modes are closely spaced to form a wide operating bandwidth. Segmentation technique and cavity model are used to analyze the antenna characteristics and experimental data are show to be in good agreement with the calculated results. With the proposed structure, the measured antenna bandwidth of 230MHz is obtained, which is almost 2.65 times larger than that of an unloaded rectangular patch antenna and fully covers the whole frequency range of 1.885GHz~2.025GHz allocated to IMT-2000.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.168-172
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• 2003

This paper analyzes the output noise and the noise figure of common source MOSFET pair each input of which is separately driven in the different frequencies. This analysis is performed for concurrent dual band cascode CMOS LNA with double inputs and single output fabricated in $0.18{\mu}m$ CMOS process. Since both inputs and output are matched to near $50{\Omega}$ using on-chip inductors, the measured noise figures are much higher than those of usual CMOS LNA. But, the main concern of this paper is focused on the added noise features due to the other channel common source stage. The dual-band LNA results in noise figure of 4.54dB at 2.14GHz and 6.03dB at 5.25GHz for selectable operation and 7.44dB and 6.58dB for concurrent operation. The noise analysis explains why the added noise at each band shows so large difference.

• Journal of electromagnetic engineering and science
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• v.9 no.1
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• pp.25-31
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• 2009

This paper describes CMOS VCO circuit design procedures and techniques for multi-band/multi-standard RF transceivers. The proposed techniques enable a 4 GHz CMOS VCO to satisfy all requirements for Quad-band GSMIEDGE and WCDMA standards by achieving a good trade-off among important specifications, phase noise, power consumption, modulation performance, and chip area efficiency. To meet the very stringent GSM T/Rx phase noise and wide frequency range specifications, the VCO utilizes bond-wire inductors with high-quality factor, an 8-bit coarse tune capbank for low VCO gain(30$\sim$50 MHz/V) and an on-chip $2^{nd}$ harmonic noise filter. The proposed VCO is implemented in $0.13{\mu}m$ CMOS technology. The measured tuning range is about 34 %(3.17 to 4.49 GHz). The VCO exhibits a phase noise of -123 dBc/Hz at 400 kHz offset and -145 dBc/Hz at 3 MHz offset from a 900 MHz carrier after LO chain. The calculated figure of merit(FOM) is -183.5 dBc/Hz at 3 MHz offset. This fully integrated VCO occupies $0.45{\times}0.9\;mm^2$.

• Journal of electromagnetic engineering and science
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• v.7 no.2
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• pp.83-90
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• 2007

In this paper, the formulation of the protection ratio based upon a composite fade margin and availability is newly presented for the detailed planning of frequency coordination in the microwave relay system network, and computed results for co-channel and adjacent channel protection ratios are illustrated over an actual system with 6.2 GHz. It is shown that the protection ratio to assure a quality of service can be expressed in terms of the composite fade margin, noise-to-interference ratio, net filter discrimination, and system parameters. In addition, the net filter discrimination, depending upon the transmitter spectrum mask and the overall receiver filter characteristic, has been examined to investigate the effect of the adjacent channel protection ratio caused by the adjacent channel interference. Regarding simulated results for 6.2 GHz, 60 km, 64-QAM, and N/I=6 dB at the bit error rate of $10^{-6}$, composite fade margin and co-channel protection ratio yield 25.14 and 50.3 dB, respectively. Also, the net filter discrimination of 26.5 dB and the adjacent channel protection ratio of 23.8 dB are obtained at the first adjacent channel of 30 MHz. The proposed method provides some merits in view of a comprehensive and practical application with more detailed and various system parameters needed to access the criteria for making the proper frequency coordination.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.