Multichannel Photoreceiver Arrays for Parallel Optical Interconnects

병렬식 광 인터컨넥트용 멀티채널 수신기 어레이

  • Park, Sung-Min (Department of Information Electronics Engineering, Ewha Womans University)
  • 박성민 (이화여자대학교 정보통신학과)
  • Published : 2005.07.01

Abstract

A four-channel photoreceiver ways have been realized in a 0.8$\mu$m Si/SiGe HBT technology for the applications of parallel optical interconnects. The receiver array includes four-channel transimpedance amplifiers (TIAs) and p-i-n photodiodes, where the TIAs exploit a common-emitter (CE) input configuration. Measured results demonstrate that the four-channel CE TIA array provides 3.9GHz bandwidth, 62dB$\Omega$ transimpedance gain, 7.5pA/sqrt(Hz) average noise current spectral density, and less than -25dB crosstalk between adjacent channels with 40mW power dissipation.

본 논문에서는 병렬식 광 인터컨넥트 응용을 위한 멀티채널 광수신기 어레이를 구현한다. 0.8$\mu$m Si/SiGe HBT 공정을 이용하여 설계한 수신기 어레이는 4채널의 전치증폭기 (transimpedance amplifier 혹은 TIA)와 PIN 광다이오드를 포함하는데, TIA는 일반적인 에미터 접지 (common-emitter 혹은 CE) 입력단을 취한다. 측정결과로서, CE TIA 어레이는 3.9GHz 주파수 대역폭과 62dB$\Omega$ 트랜스 임피던스 이득, 7.SpA/sqrt(Hz) 평균 노이즈 전류 스펙트럼 밀도 및 -2SdB 채널 간 crosstalk 성능을 가지며, 4채널 전체 모듈이 40mW 전력소모를 보인다.

Keywords

References

  1. T. Nagahori, K. Miyoshi, Y. Aizawa, Y. Kusachi, Y. Nukada, N. Kami, and N. Suzuki, 'An analog front-end chip set employing an electro-optical mixed design on SPICE for 5-Gb/s/ch parallel optical interconnection', IEEE J. of Solid-State Circuits, Vol. 36, No. 12, pp. 1984-1991, Dec. 2001 https://doi.org/10.1109/4.972149
  2. D. Romer, Ch. Lauterbach, L. Hoffmann, J. W. Walter, H. Huber, and G. Ebbinghaus, '700Mb/s monolithically integrated four-channel receiver array OEIC using ion-implanted InGaAs JFET technology', IEEE Photonics Technology Letters, Vol. 7, No.5, pp. 543-545, May 1995 https://doi.org/10.1109/68.384538
  3. S. M. Park, 'Four-Channel SiGe Transimpedance Amplifier Array for Parallel Optical Interconnects', IEEE Proc. of ISCAS 2004, Vol. 4, pp. 213-216, May 2004
  4. G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, M. A. Sorna, T. Tanji, O. M. Schreiber, K. Walter, J. Rieh, B. Jagannathan, A. Joseph, and S. Subbanna, '40-Gb/s circuits built from a 120-GHz fT SiGe technology', IEEE. J. of Solid-State Circuits, Vol. 2, No.9, pp. 1106-1114, Sep. 2002 https://doi.org/10.1109/JSSC.2002.801170
  5. H. H. Kim, S. Chandrasekhar, C. A. Burrus Jr., and J. Bauman, 'A Si BiCMOS Transimpedance Amplifier for 10-Gbps SONET Receiver', IEEE J. of Solid-State Circuits, Vol. 36, No. 5, pp. 769-776, May 2001 https://doi.org/10.1109/4.918914
  6. T. Vanisri and C. Toumazou, 'Integrated high frequency low noise current-mode optical transimpedance preamplifiers : Theory and Practice', IEEE J. of Solid-State Circuits, Vol. 30, pp, 677-685, Jun. 1995 https://doi.org/10.1109/4.387071