• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.408-409
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• 2007

Ferrule function have connect Optical Communication Cable. But Ferrule have important role that is decided transmission efficiency and information quality. Key-point of detailed drawing of ferrule is Anti-Reflection. In the study Broadband Anti-Reflection coating Film was design for ferrule of optical connector and deposited in low temperature by Ion-Assisted Deposition system. Optical thin film materials($Ta_2O_5$, $SiO_2$) were manufactured Index and Film thickness. $Ta_2O_5$ index is 2.123 ~ 2.125 and $SiO_2$ is 1.44 ~ 1.442. Reflection Loss of film deposited on Ferrule is 30.1[dB].

• 한국분말재료학회지
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• 제27권5호
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• pp.406-413
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• 2020

Ti_0.5Al_0.5N/CrN nano-multilayers, which are known to exhibit excellent wear resistances, were prepared using the unbalanced magnetron sputter for various periods of 2-7 nm. Ti_0.5Al_0.5N and CrN comprised a cubic structure in a single layer with different lattice parameters; however, Ti_0.5Al_0.5N/CrN exhibited a cubic structure with the same lattice parameters that formed the superlattice in the nano-multilayers. The Ti_0.5Al_0.5/CrN multilayer with a period of 5.0 nm exceeded the hardness of the Ti_0.5Al_0.5N/CrN single layer, attaining a value of 36 GPa. According to the low-angle X-ray diffraction, the Ti_0.5Al_0.5N/CrN multilayer maintained its as-coated structure up to 700℃ and exhibited a hardness of 32 GPa. The thickness of the oxidation layer of the Ti_0.5Al_0.5N/CrN multilayered coating was less than 25% of that of the single layers. Thus, the Ti_0.5Al_0.5N/CrN multilayered coating was superior in terms of hardness and oxidation resistance as compared to its constituent single layers.

• 한국진공학회지
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• 제5권4호
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• pp.333-340
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• 1996

Cu 확산방지막으로서의 Tin의 특성을 면저항 특정, X선 회절 분석, SEM, AES, capacitance-voltage(C-V) 측정에 의하여 평가하고, Cu의 확산을 민감하게 알아내는 정도를 특성 평가 방법간에 비교하였다. 여러 가지 증착방법에 의하여 Cu/TiN/Ti/SiO2/Si 구조의 다층 박막시편을 제작하였으며, 이 시편을 10% H2/90% Ar분위기, 열처리 온도 500~$800{\circ}C$ 범위에서 2시간 동안 열처리하였다. TiN의 Cu 확산방지 효과가 소멸된 경우 Cu 박막 표면에서 불규칙한 모양의 spot을 관찰할 수 있었으며 outdiffusion된 Si를 검출할 수 있었다. MOS capacitor의 C-V 특성은 열처리 온도에 따라 급격하게 변화하였다. C-V 측정에서 inversion capacitance는 열처리 온도 500~$700^{\circ}C$범위에서 열처리 온도가 높아질수록 감소하다가 $800^{\circ}C$에서 크게 증가하였으며, 이러한 특성의 변화는 TiN을 통해서 $SiO_2$와 Si내로 확산된 Cu에 의하여 발생되는 것으로 생각된다.

• 한국기계가공학회지
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• 제17권3호
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• pp.51-58
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• 2018

In this paper, the organic material Poly(methyl methacrylate) PMMA is used with inorganic $Al_2O_3$ to fabricate organic-inorganic multilayer barrier thin films. The organic thin films are developed using a roll-to-roll electrohydrodynamic atomization system, whereas the inorganic are grown using a roll-to-roll low-temperature atmospheric pressure atomic layer deposition system. For the first time, these two technologies are used together to develop organic-inorganic multilayer barrier thin films in atmospheric condition. The films are grown under optimized parameters and classified into three classes based on the layer structures, when the total thickness of the barrier is maintained at ~ 160 nm. All classes of barriers show good morphological, optical and chemical properties. The $Al_2O_3$ films with a low average arithmetic roughness of 1.58 nm conceal the non-uniformity and irregularities in PMMA thin films with a roughness of 5.20 nm. All classes of barriers show a notably good optical transmission of ~ 85 %. The hybrid organic-inorganic barriers show water vapor and oxygen permeation in the range of ${\sim}3.2{\times}10^{-2}g/m^2/day$ and $0.015cc/m^2/day$ at $23^{\circ}C$ and 100% relative humidity. It has been confirmed that it can be mass-produced and used as a low-cost barrier thin film in various printing electronic devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.225-225
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• 2010

적외선 영역에서의 밴드갭 에너지를 가지고 있는 III-V 족 화합물 반도체 물질인 $InAs_xSb_{1-x}$는 좋은 성장 안정성과 높은 전자, 홀 이동도를 가지며, 제작 비용이 적게 드는 등 적외선 광소자 제작에 많은 이점을 가지고 있기 때문에 그에 관한 연구가 최근 활발히 진행 되고 있다. 하지만 이러한 $InAs_xSb_{1-x}$를 소자 제작에 이용하기 위해서는 임의의 As 함량에 따른 InAsSb의 물질의 광학적 특성 정보가 필요하다. 본 연구에서는 1.5~6.0 eV 에너지 구간에서 $InAs_xSb_{1-x}$ ($0{\leq}x{\leq}1$) 화합물의 임의의 As 함량에 따른 유전함수를 분석하고 그 분석 변수들을 보고하고자 한다. 기성박막층착장치 (molecular beam epitaxy)를 이용하여 GaAs 기판 위에 성장 시킨 $InAs_xSb_{1-x}$ (x = 0.000, 0.127, 0.337, 0.491, 0.726, 1.000) 박막의 순수한 유전함수 $\varepsilon$을 화학적 에칭을 통해 산화막 층을 제거하여 타원편광분석법을 이용하여 얻었다. 측정된 유전율 함수는 Gaussian-broadened polynomial 들의 합으로서 반도체 물질의 유전함수를 정확히 기술하는 변수화 모델을 이용하여 재현하였다. 변수화 모델을 통해 얻어진 각각의 변수들을 As 조성비 x 에 대한 다항식으로 피팅하여 임의의 As 조성비에 대한 변수 값을 얻었다. 그 결과 임의의 조성비에 따른 $InAs_xSb_{1-x}$ ($0{\leq}x{\leq}1$) 의 유전율 함수를 얻어낼 수 있었다. 우리는 이러한 결과가 물질의 실시간 성장 모니터링이나 다층구조 분석, 광소자의 제작 등에 유용한 정보를 제공할 것으로 확신한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1526-1528
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• 1996

The dielectric reliability of a polycrystalline and a multilayered $BaTiO_3$ thin films was evaluated using a time-zero dielectric breakdown (TZDB) and a time-dependent dielectric breakdown (TDDB) techniques. The $BaTiO_3$ thin films were prepared by rf-magnetron sputtering technique on ITO-coated glass substrates. In case of the multilayered $BaTiO_3$ thin film, the dielectric breakdown histogram, which was obtained from the TZDB measurements, showed a typical Weibull distribution. While in case of polycrystalIine $BaTiO_3$ thin film, a randomly distributed dielectric breakdown histogram was observed. The TDDB results of the multilayered $BaTiO_3$ thin film guaranteed about $10^5$ hours-operation under the stress field of 1 MV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.104-106
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• 2003

다층의 산화물 박막으로 이루어진 coated conductor의 제조를 위하여 각층의 증착조건이 최적화되어야 한다. 가공/열처리를 통하여 2축배향성을 가지는 Ni 금속 기판위에 $Y_2O_3$, YSZ, $CeO_2$ 등의 산화물 완충층을 증착한 후 초전도층인 YBCO를 증착하였다. 12도와 8도의 in-plane fwhm (full width at half maximum)과 out-of-plane fwhm을 가지는 Ni 기판을 이용하여 13도와 4.5도의 in-plane 및 out-of-plane fwhm을 가지는 YBCO coated conductor를 제조하였다. 임계온도 (Tc), 임계전류 (Ic), 및 임계전류밀도 (Jc) 는 각각 84K, 3.3A, 및 $310,000\;A/cm^2$ 이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of meta1(Ag) and chalcogenide( $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ ). The holographic grating in these thin flims has been formed using a linealy polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers. As the results, we found that the diffraction efficiency of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers were 1.7% and 2.5% respectively.

• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.255-259
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• 2006

In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated. In this investigation, the SiON and Polyimide(PI) layer showed the most suitable properties. Under these conditions, the WVTR(water vapour transition rate) for PET can be reduced from level of $0.57\;g/m^2{\cdot}day$ (bare subtrate) to $1{\times}10^{-5}\;g/m^2{\cdot}day$ after application of a SiON and Polyimide layer. These results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.754-757
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• 2006

The inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Polyethylene Terephthalate (PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON, $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from level of $0.57g/m^2/day$ (bare subtrate) to $1*10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicates that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.