Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Holographic grating formation of Ag/AsGeSeS multi layer

Ag/AsGeSeS 다층 박막의 홀로그래픽 격자 형성

  • 나선웅 (광운대학교 전자재료공학과) ;
  • 박종화 (광운대학교 전자재료공학과) ;
  • 여철호 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 이영종 (여주대학 전자공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2001.11.08
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Abstract

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of meta1(Ag) and chalcogenide( $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ ). The holographic grating in these thin flims has been formed using a linealy polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers. As the results, we found that the diffraction efficiency of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers were 1.7% and 2.5% respectively.

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