• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.93-96
• /
• 2004

다층의 산화물 박막 구조를 갖는 coated conductor의 장선 제조를 위해서는 연속 증착 공정이 필요하다. 본 연구에서는 RABiTs와 IBAD 공정을 사용한 texture template을 사용하였으며, 금속 테잎을 연속적으로 이동하면서 증착할 수 있는 박막증착 장치(PLD, sputtering, evaporation)를 구축하여 PVD 방법으로 coated conductor를 제조하였다. $CeO_2/YSZ/Y_2O_3$의 완충층을 sputtering 과 evaporation을 이용하여 2축배향성을 가지는 NiW 위에 연속적으로 증착하였다. YBCO 초전도층은 연속 PLD 방법으로 증착하고, Tc, Ic, XRD, SEM을 통해 그 특성을 분석하였다. 그 결과 RABiTS template을 사용하여 Ic가 34A/cm(@77K)인 0.4m 길이의 coated conductor를 제조하였다. IBAD template를 사용하여 Ic가 34A/cm(@77K)인 0.5m길이의 coated conductor를 제조하였고, Jc는 $1.2MA/cm^2$ 이였다.

• Journal of the Korean Vacuum Society
• /
• v.16 no.5
• /
• pp.348-352
• /
• 2007

In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

• Journal of the Korean Magnetics Society
• /
• v.14 no.5
• /
• pp.192-195
• /
• 2004

Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 nm)/Co(0.8 nm)]$_{5}$/FeMn(15 nm) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 20$0^{\circ}C$ in about 5$0^{\circ}C$ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the H$_{ex}$ obtained the largest 127 Oe. And if Pd was a buffer layer, H$_{ex}$ obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.2 s.43
• /
• pp.9-15
• /
• 2007

Thermoelectric properties of the electrodeposited Bi-Te films and photoresist process have been investigated to apply for thermoelectric thin film devices. After plating in Bi-Te solutions of 20 mM concentration, which were prepared by dissolving $Bi_2O_3$ and $TeO_2$ into 1M $HNO_3$, thermoelectric properties of the films were characterized with variation of the Te/(Bi+Te) ratio in a plating solution. With increasing the Te/(Bi+Te) ratio in the plating solution from 0.5 to 0.65, Seebeck coefficient of Bi-Te films changed from $-59{\mu}V/K$ to $-48{\mu}V/K$ and electrical resistivity was lowered from $1m{\Omega}-cm$ to $0.8m{\Omega}-cm$ due to the increase in the electron concentration. Maximum power factor of $3.5{\times}10^{-4}W/K^2-m$ was obtained for the Bi-Te film with the $Bi_2Te_3$ stoichiometric composition. Using multilayer overhang process, the photoresist pattern to form thermoelectric legs of 30 m depth and 100m diameter was successfully fabricated fur micro thermoelectric device applications.

• Journal of the Korean Magnetics Society
• /
• v.14 no.6
• /
• pp.228-231
• /
• 2004

We have studied local magnetization reversal and magnetic properties induced by Laser annealing method in the strip-patterned Ta/NiFe/FeMn/Ta and Ta/NiFe/FeMn/NiFe/Ta multilayers fabricated by ion-beam deposition. The films were exposed to the emission of the DPSS (Diode Pumped Solid State, Nd:YAG) laser under 600 G. The laser beam intensity increased up to 440 mW. When the laser illuminated the patterned film with the power of above 200 m W, the intensity of MR peak located in +87 Oe shrunk. A new MR peak was generated at -63 Oe. When the laser power is 400 mW, the location of positive MR peak(H$\sub$ex/) was changed slightly from +87 Oe to +76 Oe, and the MR ratio was decreased from 0.9% to 0.1 %. On the other hand, the new (negative) MR peak shifted from -63 Oe to -80 Oe, with the MR ratio increased up to 0.3%. As the illuminated area expanded, the intensity of opposite MR peak increased and it of negative MR peak decreased. This proved that the local reversal of exchange biasing should be realized by laser annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.665-668
• /
• 2008

Multi-layered thin films of $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$, Cr, Al were deposited on glass substrate by evaporation process. As high and low refractive index material, $Fe_2O_3$ and $Na_3AlF_6$ were selected and additionally Cu, Al and Cr were chosen as mid reflective layer respectively. Optical properties including reflectance were systematically studied depending on optical thickness of $Na_3AlF_6$ especially $0.25{\lambda}$ and $0.5{\lambda}$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}C$, the $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$ show the colour rage between red and orange in $0.25{\lambda}$ and green and pupple in $0.5{\lambda}$ respectively. When the Al was used as mid reflective layers in $Fe_2O_3/Na_3AlF_6/Fe_2O_3$ system, typical yellow colour and mixed colour between green and pupple were appeared in $0.25{\lambda}$ and $0.5{\lambda}$ of $Na_3AlF_6$ respectively. As compared the experimental result to simulation data, it was found out that the experimental data is relatively well matched with the EMP simulation data.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.10 no.5
• /
• pp.153-160
• /
• 2010

We optimized the Si(substrate)/$SiO_2$(cladding)/$Si_3N_4$(antiresonant cladding)/$SiO_2$(core)/air multi-layers rib-optical waveguides of antiresonant reflecting optical waveguide (ARROW) for integrated optical biosensor structure utilizing beam propagation method (BPM). Thickness of anti-resonant cladding was derived to minimize the propagation loss and leaky field mode deeply related with evanescent mode was theoretically derived. Depth, width, refractive index and cladding thickness of anti-resonant cladding were numerically calculated into 2.3${\mu}m$, 5${\mu}m$, 1.488, and 0.11${\mu}m$ respectively to minimize propagation loss using the BPM simulation tool. Finally one- and two-dimensional propagation characteristics of ARROW was confirmed.

• Korean Journal of Optics and Photonics
• /
• v.18 no.6
• /
• pp.452-460
• /
• 2007

Ultra-low loss ZERODUR and fused silica mirrors were manufactured and their light scattering characteristics were investigated. For this purpose, ZERODUR and fused silica substrates were super-polished by the bowl feed method. The surface roughness were 0.292 ${\AA}$ and 0.326 ${\AA}$ in rms for ZERODUR and fused silica, respectively. To obtain the high reflectivity, 22 thin film layers of $SiO_2$ and $Ta_2O_5$ were deposited by Ion Beam Sputtering. The measured light scattering of ZERODUR and fused silica mirror were 30.9 ppm and 4.6 ppm, respectively. This shows that the substrate surface roughness is not the only parameter which determines the light scattering of the mirror. In order to investigate the mechanism for additional light scattering of the ZERODUR mirror, the surface roughness of the mirror was measured by AFM and was found to be 2.3 times higher than that of the fused silica mirror. It is believed that there is some mismatch at the interface between the substrate and the first thin film layer which leads to the increased mirror surface roughness. To clarify this, the contact angle measurements were performed by SEO 300A, based on the Giriflaco-Good-Fowkes-Young method. The fused silica substrates with 0.46 ${\AA}$ in its physical surface roughness shows lower contact angle than that of the ZERODUR substrate with 0.31 ${\AA}$. This indicates that the thin film surface roughness is determined by not only its surface roughness but also the surface energy of the substrate, which depends on the chemical composition or crystalline orientation of the materials. The surface energy of each substrate was calculated from a contact angle measurement, and it shows that the higher the surface energy of the substrate, the better the surface roughness of the thin film.

• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.1618-1620
• /
• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] multilayered thin films were deposited by RF Sputtering method on the Pt/Ti/$SiO_2$/Si substrate. This procedure was repeated several times to form PZT(4060)/(6040) heterolayerd thin films. The effects on the structural and dielectric properties of PZT multilayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(4060)/(6040) multilayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) multilayered thin films. The relative dielectric constant and dielectric loss at 100Hz of the PZT(4060)/(6040)-5 multilayered thin films were about 1106 and 0.016, respectively.

• Journal of the Korean Society of Fisheries and Ocean Technology
• /
• v.30 no.4
• /
• pp.350-356
• /
• 1994

We have prepared superconducting Bi-Pb-Sr-Ca.Cu-O thin films by RF magnetron sputtering technique, on heated MgO(100) substrates. Sputtering was carried out in a mixture of argon and oxygen(10%) and the pressure was maintained at 5 mTorr during deposition. The substrate temperature was maintained $400^{\circ}C$ during deposition. The films sputtered were amorphous and insulating. All the films became superconducting by annealing, The films annealed at $880^{\circ}C$ for 30 minutes in air showed high-Tc phase with zero resistivity of 93K. These results indicate that the growth of the high-Tc phase is promoted by the presence of Pb at annealing temperature.