Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Dielectric Properties of the PZT Multilayered Thin Films for FRAM

FRAM 응용을 위한 PZT 다층 박막의 유전 특성

  • 남성필 (광운대학교 전자재료공학과) ;
  • 이상철 (광운대학교 전자재료공학과) ;
  • 이상헌 (선문대학교 전자정보통신공학부) ;
  • 배선기 (인천대학교 전기과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 2004.07.14
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Abstract

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] multilayered thin films were deposited by RF Sputtering method on the Pt/Ti/$SiO_2$/Si substrate. This procedure was repeated several times to form PZT(4060)/(6040) heterolayerd thin films. The effects on the structural and dielectric properties of PZT multilayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(4060)/(6040) multilayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) multilayered thin films. The relative dielectric constant and dielectric loss at 100Hz of the PZT(4060)/(6040)-5 multilayered thin films were about 1106 and 0.016, respectively.

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