Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Dielectric Properties of PZT(52/48)/BST(60/40) Heterolayered Thin Film Prepared bv RF Sputtering Method

RF 스퍼터링법을 이용한 PZT(52/48)/BST(60/40) 이종층 박막의 유전 특성

  • 권현율 (광운대학교 전자재료공학과) ;
  • 김지헌 (광운대학교 전자재료공학과) ;
  • 최의선 (광운대학교 전자재료공학과) ;
  • 이성갑 (서남대학교 전기전자공학부) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 2004.07.14
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Abstract

The $Pb(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4})TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using the RF sputtering method with RF powers of 60,70,80,90[W]. All thin films showed the peaks of the tetragonal phase. Increasing the RF power, dielectric constant and loss of the PZT(52/48)/BST(60/40)] heterolayered thin films were decreased. The thickness ratio of PZT and BST thin films was 1/1. The relative dielectric constant and the dielectric loss of the PZT(52/48)/ BST(60/40) heterolayered thin films were 562 and 13%, respectively.

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