• Title/Summary/Keyword: 3D NAND Flash

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NAND Flash memory 소자 기술 동향

  • Lee, Hui-Yeol;Park, Seong-Gye
    • The Magazine of the IEIE
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    • v.42 no.7
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    • pp.26-38
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    • 2015
  • 고집적화를 위한 Floating Gate NAND 개발과정에서 몇 차례 기술적 한계상황에 직면하였었지만, Air-Gap, Double patterning, Multi-level Cell, Error Correction Code과 같은 breakthrough idea 을 활용하여 1Xnm까지 성공적인 scale-down 을 하였고 10nm 까지도 바라보고 있지만, 10nm 미만으로는 적절한 방안을 찾지 못한 상황입니다. CTD 의 3D NAND Flash는 Aspect Ratio, Poly channel의 intrinsic 특성, Data 보존 능력 등 해결 해야 할 issue 들이 남아 있지만, F.G Flash 의 지난 20년간 Lesson-learn 과 Band engineering, Channel Si, PUC 의 요소기술 개발 및 System algorithm 개발, QLC 개발 등을 통하여 F.G Flash를 넘어 지속적인 Cost-down 이 가능할 것입니다.

Process Variation on Arch-structured Gate Stacked Array 3-D NAND Flash Memory

  • Baek, Myung-Hyun;Kim, Do-Bin;Kim, Seunghyun;Lee, Sang-Ho;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.260-264
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    • 2017
  • Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

Implementation of a Prefetch method for Secondary Index Scan in MySQL InnoDB Engine (MySQL InnoDB엔진의 Secondary Index Scan을 위한 Prefetch 기능 구현)

  • Hwang, Dasom;Lee, Sang-Won
    • Journal of KIISE
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    • v.44 no.2
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    • pp.208-212
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    • 2017
  • Flash SSDs have many advantages over the existing hard disks such as energy efficiency, shock resistance, and high I/O throughput. For these reasons, in combination with the emergence of innovative technologies such as 3D-NAND and V-NAND for cheaper cost-per-byte, flash SSDs have been rapidly replacing hard disks in many areas. However, the existing database engines, which have been developed mainly assuming hard disks as the storage, could not fully exploit the characteristics of flash SSDs (e.g. internal parallelism). In this paper, in order to utilize the internal parallelism intrinsic to modern flash SSDs for faster query processing, we implemented a prefetching method using asynchronous input/output as a new functionality for secondary index scans in MySQL InnoDB engine. Compared to the original InnoDB engine, the proposed prefetching-based scan scheme shows three-fold higher performance in the case of 16KB-page sizes, and about 4.2-fold higher performance in the case of 4KB-page sizes.

Study on the Activation Energy of Charge Migration for 3D NAND Flash Memory Application (3차원 플래시 메모리의 전하 손실 원인 규명을 위한 Activation Energy 분석)

  • Yang, Hee Hun;Sung, Jae Young;Lee, Hwee Yeon;Jeong, Jun Kyo;Lee, Ga won
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.2
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    • pp.82-86
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    • 2019
  • The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

Design and Implementation of JPEG Image Display Board Using FFGA (FPGA를 이용한 JPEG Image Display Board 설계 및 구현)

  • Kwon Byong-Heon;Seo Burm-Suk
    • Journal of Digital Contents Society
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    • v.6 no.3
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    • pp.169-174
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    • 2005
  • In this paper we propose efficient design and implementation of JPEG image display board that can display JPEG image on TV. we used NAND Flash Memory to save the compressed JPEG bit stream and video encoder to display the decoded JPEG mage on TV. Also we convert YCbCr to RGB to super impose character on JPEG image. The designed B/D is implemented using FPGA.

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AS B-tree: A study on the enhancement of the insertion performance of B-tree on SSD (AS B-트리: SSD를 사용한 B-트리에서 삽입 성능 향상에 관한 연구)

  • Kim, Sung-Ho;Roh, Hong-Chan;Lee, Dae-Wook;Park, Sang-Hyun
    • The KIPS Transactions:PartD
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    • v.18D no.3
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    • pp.157-168
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    • 2011
  • Recently flash memory has been being utilized as a main storage device in mobile devices, and flashSSDs are getting popularity as a major storage device in laptop and desktop computers, and even in enterprise-level server machines. Unlike HDDs, on flash memory, the overwrite operation is not able to be performed unless it is preceded by the erase operation to the same block. To address this, FTL(Flash memory Translation Layer) is employed on flash memory. Even though the modified data block is overwritten to the same logical address, FTL writes the updated data block to the different physical address from the previous one, mapping the logical address to the new physical address. This enables flash memory to avoid the high block-erase cost. A flashSSD has an array of NAND flash memory packages so it can access one or more flash memory packages in parallel at once. To take advantage of the internal parallelism of flashSSDs, it is beneficial for DBMSs to request I/O operations on sequential logical addresses. However, the B-tree structure, which is a representative index scheme of current relational DBMSs, produces excessive I/O operations in random order when its node structures are updated. Therefore, the original b-tree is not favorable to SSD. In this paper, we propose AS(Always Sequential) B-tree that writes the updated node contiguously to the previously written node in the logical address for every update operation. In the experiments, AS B-tree enhanced 21% of B-tree's insertion performance.

Analysis for Shielding Effectiveness of EMI Spray Coating Layers in 3D Structure (3차원 구조에서 EMI 스프레이 코팅막의 차폐효과 분석)

  • Hur, Jung;Lee, Won-Hui
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.19 no.4
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    • pp.35-39
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    • 2019
  • The shielding effectiveness (SE) of the EMI spray coating film was measured in a three-dimensional structure. The shielding effectiveness was measured by AST D4935 using coaxial type TEM cell. A standard sample of the cylindrical slab is fabricated to measure the shielding effectiveness using the ASTM D4935. At this time, spray coating was performed by bonding a three-dimensional structure with NAND flash memory to a standard sample. In the case of spray coating, it was uniformly coated not only on the horizontal plane but also on the vertical plane of the three-dimensional structure. As a result of measurement, shielding effectiveness of maximum 59 dB was measured in a three-dimensional structure similar to the case without three-dimensional structure. As a result, it was confirmed that the spray coating can be uniformed even in the three-dimensional structure.

Evaluation of Data Encoding Method Enhancing Program Performance of NAND Flash Memory (NAND 플래시 메모리의 프로그램 속도 개선을 위한 데이터 코드 변환 기법의 성능 평가)

  • Jeong, Gwanil;You, Soowon;Hyun, Choulseung;Lee, Donghee
    • Annual Conference of KIPS
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    • 2021.11a
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    • pp.43-46
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    • 2021
  • 다양한 응용에서 저장 매체로 사용되는 NAND 플래시 메모리는 저비용과 대용량을 위해 셀 당 비트 수 증가, 제조 공정의 미세화, 그리고 적층 기술 등 다양한 기술을 사용한다. 그렇지만 이러한 기술들은 플래시 메모리 셀의 안정성과 성능에 악영향을 준다. 특히 QLC 3D 플래시 메모리인 경우, 셀 상태가 많고 상태 간 임계 전압 간격이 좁기 때문에 프로그램과 읽기에 필요한 시간이 길다. 본 논문에서는 프로그램 수행 시간을 줄이고 셀 안정성에 긍정적인 영향을 줄 수 있도록 데이터 코드를 변환하는 비균일 스크램블 기법을 소개하고, 실제 시스템 데이터를 이용하여 스크램블 기법의 성능을 평가한다. 시뮬레이션을 통해 얻은 결과에 따르면 데이터 코드를 변환하여 저장하는 스크램블 기법은 최대 204%의 프로그램 성능 개선 효과를 보인다.

Comparison of Efficiency of Flash Memory Device Structure in Electro-Thermal Erasing Configuration (플래시메모리소자의 구조에 대한 열적 데이터 삭제 효율성 비교)

  • Kim, You-Jeong;Lee, Seung-Eun;Lee, Khwang-Sun;Park, Jun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.5
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    • pp.452-458
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    • 2022
  • The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.