• Transactions of the Korean Society of Mechanical Engineers
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• v.8 no.2
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• pp.133-140
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• 1984

A "two-fluid" equation model has been applied for predicting gas-solid suspension flows through a Venturi tube. In the "two-fluid"equation model, the bulk motion of the particles is considered as a continuum whose governing equation is obtained by averaging the conservation equations over a volume and expressing the equations in differential forms. Closure of the time-mean equations is achieved by modeling the turbulent correlations with an extended mixing-length theory. Proposed closure model is found to aptly simulate the dependency of the static pressure drop on the particle size, flow rate and the loading ratio.d the loading ratio.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1626-1629
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• 2003

The study is expressed on the web browser using virtual reality of developer manufacturing process and method or manufactured goods conviction for designer and developer with visualized model. This study purpose of basic feature with VRML file and Java and VRML with AWT to get WC code was presented. The study process is equal to the real thing modeling on using Pro/Engineer and exports on the VRML1.0. The condition converts VRML1.0 to VRML2.0 on the CROSS ROADS. And then Cosmo World is coding and manufacturing simulation is expressed on the Cosmo Player.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.568-574
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• 1989

Effect of PbO addition on sintering and piezoelectric properties at 0.45Pb(Ni1/3Nb2/3)O3-0.40PbTiO3-0.15PbZrO3 composition which is tetragonal phase was investigated. In this composition, Porosity and dielectric constant were increased with excess PbO addition, but Kp and d31 was not changed. These variation of physical properties could be interpreted as composition change of solid grains from tetragonal to MPB region due to amount of PbO-rich liquid changing.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1303-1304
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• 2009

In order to apply to the White light emitting diodes (WLEDs), The $Y_2SiO_5:Eu^{3+}$ as red phosphor was synthesized by solid state reaction method. The highest emission of $Y_2SiO_5:Eu^{3+}$ was shown when the $Eu^{3+}$ concentration was 0.02. A single phase was observed from X-ray diffraction (XRD) analysis of synthesized samples and secondary phase wasn't found.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.990-994
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• 2007

Bioassay-guided fractionation of the MeOH extract from the sponge Discodermia calyx collected off the coast of Jeju Island, South Korea, led to the isolation of a polyketide, icadamide C (1), along with previously reported theopederin K (3). Structure elucidation was performed by a combination of high resolution mass and 2D-NMR (principally COSY, HMBC, HSQC, and NOESY) spectroscopy. Stereochemistry of compound 1 was determined as 2R*, 3R*, 6R*, 10S*, 11S*, 12R*, 13S*, 15R* and 2'S by NMR data and Marfey analysis. Isolated metabolites displayed potent cytotoxic activity against a small panel of five human solid tumor cell lines with ED50 values of less than 0.1 μg/mL.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.6
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• pp.467-478
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• 2019

This paper describes the development and measurement results of a wide-band planar active phase array antenna system for an electronic warfare jamming transmitter. The system is designed as an $8{\times}8$ triangular lattice array using a $45^{\circ}$ slant wide-band antenna. The 64-element transmission channel is composed of a wide-band gallium nitride(GaN) solid state power amplifier and a gallium arsenide(GaAs) multi-function core chip(MFC). Each GaAs MFC includes a true-time delay circuit to avoid a wide-band beam squint, a digital attenuator, and a GaAs drive amplifier to electronically steer the transmitted beam over a ${\pm}45^{\circ}$ azimuth angle and ${\pm}25^{\circ}$ elevation angle scan. Measurement of the transmitted beam pattern is conducted using a near-field measurement facility. The EIRP of the designed system, which is 9.8 dB more than the target EIRP performance(P), and the ${\pm}45^{\circ}$ azimuth and ${\pm}25^{\circ}$ elevation beam steering fulfill the desired specifications.

• Clean Technology
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• v.17 no.1
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• pp.31-36
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• 2011

All types of ${\gamma}-Al_2O_3$ such as acidic, neutral and basic forms were chemically modified with (3-mercaptopropyl) trimethoxysilane (3-MPTMS) and oxidized by 30 wt% $H_2O_2$ solution. As a result, sulfonic acid modified ${\gamma}-Al_2O_3$ catalysts were obtained. Their formation was achieved more easily by treating 1M HCl solution. Their catalytic performance was tested by dehydration reaction of D-xylose to furfural. The sulfonic acid modified ${\gamma}-Al_2O_3$ catalysts showed high conversion (>90%) of D-xylose, and the selectivity to furfural was increased with the amount of sulfonic acid anchored on the catalyst.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.539-545
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• 2016

Alumina added with Mn3O4 up to 7.5 cat% of Mn was prepared by conventional ceramic processing, and the sintering behavior and the optical properties of which were studied as functions of Mn content. Densification and grain growth of alumina were enhanced by Mn addition up to 0.75 cat% but was leveled off at higher concentrations. XRD revealed that $Al_2MnO_4$(galaxite) was formed as a second phase in the specimens with more than 0.75 cat% of Mn. Thus it is believed that either the solid solution effect of Mn or the Zener effect of $Al_2MnO_4$ becomes predominant in the sintering of Mn-added $Al_2O_3$ according to the additive concentration. UV-VIS reflectivity(SCI) spectra of Mn-added $Al_2O_3$ consisted of smooth bottoms in 300~550 nm wavelength range and plateaus at wavelengths longer than 650 nm. The reflectivity spectrum continuously moved downward, and the specimen color became darker and thicker with increasing Mn content. The CIELAB color change with respect to standard white was also dependent on the amount of Mn added: ${\Delta}L^*$(D65) negatively increased and ${\Delta}E_{ab}^*$(D65) positively increased with increasing Mn content, probably due to Mn substitution to Al and/or the mixing effect of black $Al_2MnO_4$ as a second phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.281-290
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• 1999

This paper presents the development of a high power amplifier for a transmitter of INMARSAT-C operating at L-band(1626.5∼1646.5 MHz). To simplify the fabrication process, the whole system is designed of two parts composed of a driving amplifier and a high power amplifier The HP's AT-41486 is used for driving part and the SGS-THOMSON microelectronics' STM1645 is used the high power amplifier. The SSPA(Solid State Power Amplifier) was fabricated by the both circuits of RF and temperature compensation in aluminum housing. The realized SSPA has more than 36 dB for small signal within 20MHz bandwidth, and the voltage standing wave ratios(VSWR) of input and output Port are less than 1.5:1, respectively. The output Power of 42.2 dBm is achieved at the 1636.5 MHz. These results reveal a high power amplifier of 20 Watt which is the design target.