• Title/Summary/Keyword: 2 switch

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Design of gas-gap thermal switch for reducing cooldown time of 2-stage cryocooler (2단 냉동기의 냉각시간 단축을 위한 기체-간극 열스위치 설계)

  • 김형진;장호명
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2000.02a
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    • pp.35-38
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    • 2000
  • A preliminary design of gas-gp thermal switch is presented to reduce the cooldown time of superconducting system conduction-cooled by a two-stage refrigerator without liquid cryogens. The switch connects thermally the first and the second stages (ON) to take advantage of the larger refrigeration capacity at the first stage during the beginning period. After the cryogenic temperature is reached, the switch should isolate thermally the two stages (OFF) in order to reduce the heat leak to the cold end. In this paper, a new concept for the performance index is introduced to evaluate the reduction of the cooldown time and the increase of the cooling load at the same time. In addition, the design of a gas-gap switch is discussed as a closed container of several staggered concentric tubes filled with gas, which is frozen at low temperatures for the shut-off of heat without any mechanical actuation. Some of the detailed features in the design is quantitative investigated by the gas convection model in the continuum or the rarefied gas region.

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A PIN Diode Switch with High Isolation and High Switching Speed (높은 격리도와 고속 스위칭의 PIN 다이오드 스위치)

  • Ju Inkwon;Yom In-Bok;Park Jong-Heung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.2 s.93
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    • pp.167-173
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    • 2005
  • The isolation of the series PIN diode switch is restricted by the parallel capacitance of PIN diode and the switch driver circuit limits switching speed of PIN diode switch. To overcome these problems, a high isolation and high switching speed Pin diode switch is proposed adapting the parallel resonant inductance and TTL compatible switch driver circuit. The measurement results of the 3 GHz PM diode switch show 1 GHz frequency band, less than 1.5 dB insertion loss, 65 dB isolation, more than 15 dB return loss and less than 30 ns switching speed. In particular the 3 GHz PIN diode switch using the parallel resonant inductance exhibits the improvement of isolation by 15 dB.

Study of the Switching Errors in an RSFQ Switch by Using a Computerized Test Setup (자동측정장치를 사용한 RSFQ switch의 Switching error에 관한 연구)

  • Kim, Se-Hoon;Baek, Seung-Hun;Yang, Jung-Kuk;Kim, Jun-Ho;Kang, Joon-Hee
    • Progress in Superconductivity
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    • v.7 no.1
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    • pp.36-40
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    • 2005
  • The problem of fluctuation-induced digital errors in a rapid single flux quantum (RSFQ) circuit has been a very important issue. In this work, we calculated the bit error rate of an RSFQ switch used in superconductive arithmetic logic unit (ALU). RSFQ switch should have a very low error rate in the optimal bias. Theoretical estimates of the RSFQ error rate are on the order of $10^{-50}$ per bit operation. In this experiment, we prepared two identical circuits placed in parallel. Each circuit was composed of 10 Josephson transmission lines (JTLs) connected in series with an RSFQ switch placed in the middle of the 10 JTLs. We used a splitter to feed the same input signal to both circuits. The outputs of the two circuits were compared with an RSFQ exclusive OR (XOR) to measure the bit error rate of the RSFQ switch. By using a computerized bit-error-rate test setup, we measured the bit error rate of $2.18{\times}10^{-12}$ when the bias to the RSFQ switch was 0.398 mA that was quite off from the optimum bias of 0.6 mA.

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A study of QoS for High Speed MIOQ Packet Switch (다중 입출력 큐 방식 고속 패킷 스위치를 위한 QoS에 대한 연구)

  • Ryu, Kyoung-Sook;Choe, Byeong-Seog
    • Journal of Internet Computing and Services
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    • v.9 no.2
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    • pp.15-23
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    • 2008
  • This paper proposes the new structural MOQ(Multiple Input/Output-Queued) switch which guarantees QoS while maintaining high efficiency and deals with the Anti-Empty algorithm which is new arbitration algorithm to be used for the proposed switch. The new structure of the proposed switch based on MIQ, MOQ is designed to have the same buffer speed as the external line speed. Also, the proposed switch makes it possible to remove the weak point of existing methods and introduces the new method of the MOQ operation to support QoS. Therefore, this switch is equal to the Output Queued switch in efficiency and delay, and guarantees the high-speed switching supporting QoS without cell loss.

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The Pattern Analysis of Dual & Switch Pulse Signal in Multiple Pulse Train Using the Second Deviation of TOA (TOA 2차 차분을 이용한 다중 펄스열의 Dual & Switch 펄스신호 패턴 분석)

  • Lim, Joong-Soo;Chae, Gyoo-Soo
    • Proceedings of the KAIS Fall Conference
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    • 2012.05b
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    • pp.804-807
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    • 2012
  • 본 논문에서는 펄스 레이저(LASER) 송신기에서 방사되는 펄스신호를 레이저 감시 시스템에서 실시간으로 수신하여 수신된 레이저 펄스들의 변화 패턴, 특히 Dual & Switch 신호의 패턴을 분석하는 방법에 대하여 기술하였다. Dual & Switch 신호는 펄스반복시간이 주기적으로 변경되어 펄스 패턴을 예측하기가 매우 어렵다. 본 논문에서는 펄스반복간격(PRI)의 차분을 이용하여 고정, 지터, Dual & Switch 신호의 패턴을 확인하는 방법을 제안하였다. 제안된 방법은 Dual & Switch 신호에 대한 신호 식별능력이 가능하여 레이저 감시시스템 등에 사용할 수 있을 것으로 판단된다.

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A study on the design of switch module for devices (세라믹 적층형 스위치 모듈 설계에 관한 연구)

  • Kim, In-Sung;Song, Jae-Sung;Min, Bok-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.431-434
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    • 2004
  • The design, simulation, modeling and measurement of a RF switch module for GSM applications were presented in this paper. switch module were simulated by ADS and constructed using a LTCC multi-layer switching circuit and integrated low pass filter, designed to operate in the GSM band. Insertion and return losses at 900 MHz of the low pass filters were designed to lower than 0.3 dB and higher than 12.7 dB respectively. The switch module constructed, contained 10 embedded passives and 3 surface mounted components integrated on $4.6{\times}4.8{\times}1.2$ m volume, 6-layer integrated circuit. The insertion loss of switch module at m MHz were around 11 dB.

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Effects of Cu impurity on the switching characteristics of the optically controlled bistable semiconductor switches (광제어 쌍안정 반도체 스위치에서 구리 불순물이 스위치특성에 미치는 영향)

  • 고성택
    • Electrical & Electronic Materials
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    • v.7 no.3
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    • pp.213-219
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    • 1994
  • Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

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Development of 1×16 Thermo-optic MZI Switch Using Multimode Interference Coupler (다중모드 간섭현상을 이용한 1×16 마하젠더 스위치 개발)

  • Kim, Sung-Won;Hong, Jong-Kyun;Lee, Sang-Sun
    • Korean Journal of Optics and Photonics
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    • v.17 no.5
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    • pp.469-474
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    • 2006
  • A $1{\times}16$ thermo-optic switch with small excess loss using multimode interference(MMI) couplers is designed, fabricated, and measured. This paper introduces the proposed $1{\times}16$ thermo-optic switch, and discusses the measurement results. The $1{\times}16$ thermo-optic switch is farmed as 4-stage which consists of 15 unit devices. The unit devices are the $2{\times}2$ thermo-optic switches with Mach-Zehnder interferometer(MZI) structure. The characteristics of the $1{\times}16$ thermo-optic switch depends strongly on each unit device. The unit deviceconsists of two 3-dB general interference MMI couplers and two single mode waveguide arms as a phase shifter. First of all, the 3-dB optical splitter and $2{\times}2$ MZI thermo-optic switch have been tested to confirm the characteristics of the unit devices of the $1{\times}16$ MZI thermo-optic switch. Using the measurement results of the unit devices, the $1{\times}16$ MZI thermo-optic switch can be produced with better characteristics. The resultant structure of the MMI coupler with the optical light source of wavelength of 1550nm for the $1{\times}16$ thermo-optic switch is that the width and the optimized length are $25{\mu}m\;and\;1580{\mu}m$, respectively. The smallest excess loss fur the unit device is -0.5dB and the average excess loss is -0.7dB.

고속 디지틀 교환 IC (HDS-LSI)의 소개

  • Jeong, Chan-Geun;Lee, Yeong-Gyu
    • ETRI Journal
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    • v.7 no.2
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    • pp.43-48
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    • 1985
  • 일반적으로 시분할 전자 교환기의 time-switch로는 RAM을 이용한 방식이 많이 사용되고 있는데 본고에서는 간단한 하드웨어와 빠른 교환 속도의 특징을 갖는 고속 디지틀 스위칭 IC, HDS(Highspeed Digital Switch)-LSI에 관하여 간단히 소개하고자 한다. 먼저 일반적인 time-switch의 구조와 동작에 대해 간단히 설명하고 HDS-LSI의 기본 원리와 구조 그리고 응용 분야에 대해 예를들어 설명하였다.

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Design of Low-Power and Low-Latency 256-Radix Crossbar Switch Using Hyper-X Network Topology

  • Baek, Seung-Heon;Jung, Sung-Youb;Kim, Jaeha
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.77-84
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    • 2015
  • This paper presents the design of a low-power, low area 256-radix 16-bit crossbar switch employing a 2D Hyper-X network topology. The Hyper-X crossbar switch realizes the high radix of 256 by hierarchically combining a set of 4-radix sub-switches and applies three modifications to the basic Hyper-X topology in order to mitigate the adverse scaling of power consumption and propagation delay with the increasing radix. For instance, by restricting the directions in which signals can be routed, by restricting the ports to which signals can be connected, and by replacing the column-wise routes with diagonal routes, the fanout of each circuit node can be substantially reduced from 256 to 4~8. The proposed 256-radix, 16-bit crossbar switch is designed in a 65 nm CMOS and occupies the total area of $0.93{\times}1.25mm^2$. The simulated worst-case delay and power dissipation are 641 ps and 13.01 W when operating at a 1.2 V supply and 1 GHz frequency. In comparison with the state-of-the-art designs, the proposed crossbar switch design achieves the best energy-delay efficiency of $2.203cycle/ns{\cdot}fJ{\cdot}{\lambda}2$.