Effects of Cu impurity on the switching characteristics of the optically controlled bistable semiconductor switches

광제어 쌍안정 반도체 스위치에서 구리 불순물이 스위치특성에 미치는 영향

  • Published : 1994.05.01

Abstract

Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

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