• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.67-70
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• 1995

Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.

• Journal of Pharmaceutical Investigation
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• v.18 no.1
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• pp.1-3
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• 1988

Effect of hydrochlorothiazide on serum potassium level was studied in the hypokalemia-induced rats by the oral administration of glycyrrhiza extract (GE) for 4 weeks. According to the concentration of GE, serum potassium levels were found to be $5.8{\pm}0.2,\;5.4{\pm}0.2\;and\;5.5{\pm}0.2\;mM/l$ after oral administration of 0.1, 0.2 and 0.5% GE solutions for 4 weeks, respectively, comparing $6.4{\pm}0.2\;mM/l$ in normal rats. The i.p. administration of hydrochlorothiazide (100mg/kg) showed no significant difference $(5.1{\pm}0.3-5.2{\pm}0.3\;mM/l)$ in the decrease of serum potassium levels between these hypokalemia-induced rats and normal rats, regardless of the concentration of pretreated GE solutions. Therefore it was considered that the administration of hydrochlorothiazide did not worsen the hypokalemia induced by the long term administration of GE in rats.

• Journal of the Korean Vacuum Society
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• v.3 no.3
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• pp.337-340
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• 1994

기판의 크기에 따른 Strained Layer에서의 응력 풀림 현상을 연구하기 위하여 마이크론 이하에 서 50 마이크론의 크기를 가지는 메사 구조를 제작하였다. 제작된 메사 구조위에 성장시킨 GeSi층은 마 이크로 Raman, XPS, I-V와 C-V측정에 의하여 응력의 풀림현상을 관찰하였다. 이 실험을 통하여 메사 구조 위에 성장시킨 GexSi1-x 층에서의 응력풀림이 편평한 기판위에 성장시킨 경우에 비하여 원활하였 다. 이것은 메사 구조의 가장자리에 Strain Dislocation 이 편중되는 것으로 이해될수 있다.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.916-923
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• 2004

In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

• YAKHAK HOEJI
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• v.37 no.1
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• pp.18-29
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• 1993

This study was initiated to investigate the effective action and mechanism of GE-132 (Carboxyethylgermanium sesquioxide)on benzo(a)pyrene, which have strong carcinogenicity and mutagenicity. To confirm desmutagenic effect (inhibition of metabolic processes of benzo(a)pyrene with S9 Mix or inactivation of the mutagenicity of benzo(a)pyrene metabolites) and antimutagenic effect (inhibition of gene-expression of reverted genes) of GE-132 against benzo(a)pyrene using with Salmonella typhimuyium TA98 Ames test was performed. The revertants in desmutagenicity test were decreased significantly in the combined groups of benzo(a)pyrene and GE-132 than benzo(a)pyrene only, without inhibition the metabolism of benzo(a)pyrene by S9 Mix. The ideal combined groups of benzo(a)pyrene and GE-132 were 10 $\mu{M}$ and 10mg, 20 $\mu{M}$ and 20mg, 100 $\mu{M}$ and 30 mg, respectively. Then, the revertants in antimutagenicity test, which was studied the direct action of GE-132 on the induction of revertant cells by Salmonella typhimurium TA98 and activated benzo(a)pyrene were decreased significantly in the treated groups of GE-132 than no treated groups. The number of revertants of Salmonella typhimurium TA98 were reduced with increasing amounts of GE-132. From the above results, it was found that GE-132 inactivated the mutagenic metabolites of benzo(a)pyrene without inhibition of the enzyme action in the S9 Mix, and GE132 showed antimutagenic effect which have inhibitory action of reverted gene expression.

• Progress in Superconductivity and Cryogenics
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• v.21 no.2
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• pp.36-39
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• 2019

Effects of the spherically shaped Ge and the rod-like carbon-coated Ge on the superconducting properties of $MgB_2$ were investigated. Pure Ge and carbon-coated Ge nano-powders were synthesized under the different amount of $CH_4$ (0 to 5 kPa) by using DC thermal plasma method. When the $CH_4$ was added ~100 nm sized Ge with a spherical shape changed to rod-like morphology with a diameter of ~30-70 nm and a length of ~400-500 nm. Also it was confirmed that thin carbon layers of a few nanometers were formed along the rod length and the agglomerated carbons were found on the edges of rods. Pure spherical Ge and Ge/C rods were mixed and milled with Mg & B precursor to form the doped $MgB_2$ bulk samples by the solid-state reaction method. Almost no change of $T_c$ was noticed for the pure Ge-added $MgB_2$, whereas $T_c$ was found to decrease with the Ge/C-added $MgB_2$ samples. It was found that the pure spherical Ge showed to have a negative effect on the flux pinning of $MgB_2$. However, Ge/C rods can enhance the flux pinning property of $J_c$ due to the coated carbon on Ge rods.

• Journal of Bio-Environment Control
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• v.24 no.4
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• pp.281-286
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• 2015

This study was carried out to investigate the effects of cultural systems on growth, vitamin C, amino acid content, and yield of Peucedanum japonicum grown in artificial light plant factory. Treatments were given with Nutrient Film Technique (NFT), Medium (Perlite), and Aeroponics. Plant height was the highest in NFT system as 10.2cm, and was the shortest in Perlite as 8.9cm. Fresh leaf weight was the high in order of Perlite, NFT, and Aeroponics. Total phenolic compounds was different from cultural systems in order of Aeroponics as $117.84mg{\cdot}100g^{-1}\;GE$, NFT as $98.57mg{\cdot}100g^{-1}\;GE$ and Perlite as $74.62mg{\cdot}100g^{-1}\;GE$. Total flavonoid content of Aeroponics is $0.12mg{\cdot}100g^{-1}$ but that of NFT and Perlite treatments is not detected. Vitamin C content in Aeroponics as $108.23mg{\cdot}100g^{-1}$ was significant different from Perlite as $88.05mg{\cdot}100g^{-1}$ as and NFT $80.83mg{\cdot}100g^{-1}$. Total dietary fiber content was higher Aeroponics than Perlite and NFT. Cystein content was the highest in Aeroponics as $46.76mg{\cdot}100g^{-1}$ and methione content was the lowest in Perlite as $75.64mg{\cdot}100g^{-1}$. Mineral content of leaves was high in order of K, Ca, P and Mg in all treatments.

• Asian-Australasian Journal of Animal Sciences
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• v.26 no.7
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• pp.981-986
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• 2013

The nutrient digestibility, nitrogen balance and in vivo metabolizable energy supply of Mucuna pruriens whole pods fed to growing Pelibuey lambs was investigated. Eight Pelibuey sheep housed in metabolic crates were fed increasing levels of Mucuna pruriens pods: 0 (control), 100 (Mucuna100), 200 (Mucuna200) and 300 (Mucuna300) g/kg dry matter. A quadratic (p<0.002) effect was observed for dry matter (DM), neutral detergent fibre (aNDF), nitrogen (N) and gross energy (GE) intakes with higher intakes in the Mucuna100 and Mucuna200 treatments. Increasing M. pruriens in the diets had no effect (p>0.05) on DM and GE apparent digestibility (p<0.05). A linear reduction in N digestibility and N retention was observed with increasing mucuna pod level. This effect was accompanied by a quadratic effect (p<0.05) on fecal-N and N-balance which were higher in the Mucuna100 and Mucuna200 treatments. Urine-N excretion, GE retention and dietary estimated nutrient supply (metabolizable protein and metabolizable energy) were not affected (p>0.05). DM, N and GE apparent digestibility coefficient of M. pruriens whole pods obtained through multiple regression equations were 0.692, 0.457, 0.654 respectively. In vivo DE and ME content of mucuna whole pod were estimated in 11.0 and 9.7 MJ/kg DM. It was concluded that whole pods from M. pruriens did not affect nutrient utilization when included in an mixed diet up to 200 g/kg DM. This is the first in vivo estimation of mucuna whole pod ME value for ruminants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.138-138
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• 2008

Ti capping layer를 이용하여 NiGe의 열적 안정성을 향상시키는 연구를 수행하였다. N-type Ge(100) 기판에 30nm 두께의 Ni과 30nm 두께의 Ti capping layer를 E-beam evaporator를 이용하여 증착하고 $300^{\circ}C$에서 $700^{\circ}C$ 까지 30초간 $N_2$ 분위기에서 급속 열처리하여 Ni-Germanide를 형성하였다. XRD의 결과로부터 Ti capping layer 유무에 상관없이, 전 온도 범위에 걸쳐 NiGe 상이 형성된 것을 관찰할 수 있었다. 급속 열처리 온도에 따른 면저항 값을 측정한 경우, $300^{\circ}C$에서 $600^{\circ}C$까지의 열처리 온도 범위에서는 모든 시편들이 비슷한 면저항 값을 보인 반면, 열처리 온도가 $700^{\circ}C$ 이상에서는 Ti capping layer가 있는 시편이 Ti capping layer가 없는 시편보다 낮은 면저항 값을 갖는 것을 확인할 수 있었다. 이는 고온 열처리 시 Ti capping layer에 있는 Ti가 기판 방향으로 확산하여 NiGe grain boundary에 segregation 되고 그로 인하여 NiGe의 grain boundary 움직임을 억제하여 agglomeration 현상을 효과적으로 방지하였기 때문에 나타난 현상으로 사료된다.