Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 29 Issue 5
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- Pages.407-414
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- 1996
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
THIN FILM GROWTH AND SURFACE REACTION ON H-TERMINATED SILICON SURFACE
- Yasuda, Yukio (Department of Crystalline Materials Science, School of Engineering, Nagoya University) ;
- Zaima, Shigeaki (Department of Crystalline Materials Science, School of Engineering, Nagoya University)
- Published : 1996.10.01
Abstract
We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the
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