• 제목/요약/키워드: 10 Gbit/s

검색결과 39건 처리시간 0.021초

수 10 Gbit/s 모바일 프론트홀 링크에서 색분산에 의한 OFDM 신호 전송성능 열화 분석 (Degradation of OFDM Signal Performance by Chromatic Dispersion in a Several 10 Gbit/s Mobile Front-haul Link)

  • 원용욱;서동선
    • 전기전자학회논문지
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    • 제20권1호
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    • pp.26-30
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    • 2016
  • 본 논문에서는 광섬유 분산에 의한 직교 주파수 분할 다중방식(OFDM: orthogonal frequency division multiplexing)의 부 반송파 신호왜곡에 대해 조사하였다. 광섬유 색 분산은 OFDM 신호 간의 위상차를 발생시키고, 이는 OFDM 신호 왜곡을 유기하는 비대칭 첨두전력대 평균전력 비율을 유기한다. 광섬유 분산의 영향을 확인하기 위한 실험은 직접검출 광 모바일 프론트홀 시스템에서 수행하였다. 4 Gbit/s의 QPSK-OFDM 심볼의 경우, 100 km 전송에서 EVM이 40 %에 도달함을 확인하였다.

Comparison with Dispersion Compensation Scheme Using 10 Gbit/s × 40 Channels Wavelength Division Multiplexing Transmission over 323 km of Field Installed Non-Zero Dispersion Shift Fiber

  • Kim, Geun-Young;Park, Soo-Jin;Jeong, Ki-Tae
    • Journal of the Optical Society of Korea
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    • 제10권3호
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    • pp.112-117
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    • 2006
  • We experimentally investigated the transmission characteristics of 400 Gbit/s (10 Gbit/s ${\times}$ 40 channels) WDM signals with 100 GHz channel spacing over 323 km of installed NZ_DSF. The installed fiber has optical properties of 0.28 dB/km attenuation, 4.3 ps/nm/km dispersion, $0.083ps/nm^2/km$ dispersion slope and less than $0.05ps/km^{1/2}$ PMD coefficient. In this experiment, two cases of dispersion compensation schemes, the lumped type and the distributed type, were compared. The results implied that the distributed type dispersion compensation in which dispersion compensation devices are inserted at the end of the each span showed better transmission performance than the lumped one in which dispersion compensation devices are located at the transmitter and receiver sites. From the analysis of the experimental results, we verified that different transmission performance comes from the power penalty induced by XPM in the distributed scheme is lower than the lumped scheme case.

AlGaAs/GaAs HBT를 사용한 10Gbit/s 리미팅증폭기 (10Gbit/s AlGaAs/GaAs HBT limiting amplifier)

  • 곽봉신;박문수
    • 전자공학회논문지D
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    • 제34D권7호
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    • pp.15-22
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    • 1997
  • A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.

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반도체 광증폭기(SOA)를 이용한 2.5 Gbit/s 전광 OR 논리 게이트 (2.5 Gbit/s all-optical GR logic gate using semiconductor optical amplifiers)

  • 변영태;김재헌;전영민;이석;우덕하;김선호
    • 한국광학회지
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    • 제13권2호
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    • pp.151-154
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    • 2002
  • 선광(all-optical) OR 논리소자가 반도체 광증폭기 (SOA)의 이득포화와 파장변환 특성을 이용하여 구현되었다. 전광(all-optical) OR 논리소자는 이득의 비선형성에 의해 동작되므로 SOA의 이득포화를 충분히 얻기 위해 펌프신호는 SOA의 입력단에서 어븀 첨가 광섬유 증복기(EDFA)에 의해 증폭되었다. 전광 OR논리소자의 동작특성은 2.5 Gbit/s에서 성공적으로 측정되었다.

A 1.485-Gbit/s Video Signal Transmission System at Carrier Frequencies of 240 GHz and 300 GHz

  • Chung, Tae-Jin;Lee, Won-Hui
    • ETRI Journal
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    • 제33권6호
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    • pp.965-968
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    • 2011
  • A 1.485-Gbit/s video signal transmission system at carrier frequencies of 240 GHz and 300 GHz was implemented and demonstrated. The radio frequency front-ends are composed of Schottky barrier diode subharmonic mixers (SHMs), frequency triplers, and diagonal horn antennas for the transmitter and receiver. Amplitude shift keying with an intermediate frequency of 5.94 GHz was utilized as the modulation scheme. A 1.485-Gbit/s video signal with a high-definition serial digital interface format was successfully transmitted over a wireless link distance of 4.2 m and displayed on an HDTV with a transmitted average output power of 20 ${\mu}W$ at a 300-GHz system.

Multi-Gbit/s Digital I/O Interface Based on RF-Modulation and Capacitive Coupling

  • Shin, Hyunchol
    • Journal of electromagnetic engineering and science
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    • 제4권2호
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    • pp.56-62
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    • 2004
  • We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${\mu}{\textrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links.

A 10-Gbit/s Limiting Amplifier Using AlGaAs/GaAs HBTs

  • Park, Sung-Ho;Lee, Tae-Woo;Kim, Yeong-Seuk;Kim, Il-Ho;Park, Moon-Pyung
    • Journal of Electrical Engineering and information Science
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    • 제2권6호
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    • pp.197-201
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    • 1997
  • To realize 10-Gbit/s optical transmission systems, we designed and fabricated a limiting amplifier with extremely high operation frequencies over 10-GHz using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and investigated their performances. Circuit design and simulation were performed using SPICE and LABRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5${\times}$10$\mu\textrm{m}$$^2$, used for the circuit fabrication, exhibited the cutoff frequency of 63GHz and maximum oscillation frequency of 50GHz. After fabrication of MMICs, we observed the very wide bandwidth of DC∼15GHz for a limiting amplifier from the on-wafer measurement. Ceramic-packaged limiting amplifier showed the excellent eye opening, the output voltage swing of 750mV\ulcorner, and the rise/fall time of 40ps, measured at the data rates of 10-Gbit/s.

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소광비, 처핑 및 자기위상변조가 2.5Gbit/s 직접변조한 DFB-LD의 전송성능에 미치는 영향 (The effect of extinction ratio, chirp and SPM on transmission performance of directly modulated 2.5 Gbit/s transmitter)

  • 김근영;이용기
    • 한국광학회지
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    • 제12권3호
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    • pp.212-218
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    • 2001
  • 직접변조한 2.5Gbit/s 송신기에 있어서 DFB-LD에 인가되는 바이어스 전류에 따른 출력 광신호의 소광비와 처핑의 관계를 살펴보았고, 이상분산 영역 전송실험을 통행 변조된 광신호가 8-10dB의 소광비를 가질경우(바이어스 전류가 발진임계전류의 1.5배에서 1.8배) 소광비와 처핑으로 인한 총 전송 패널티가 최소가 됨을 알 수 있었다. 또한 240km 이상분산 영역 전송실험을 통해 직접변조된 광신호의 소광비와 SPM의 상관관계도 분석하였다. SPM을 고려할 경우 본 실험과 같은 구성에서 전송거리가 200km 미만인 경우는 10.2dB의 소광비에서 200km 이상인 경우는 8.4dB의 소광비에서 가장 좋은 수신감도를 얻을 수 있었다.

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2 Gbit/s VLC Scheme Using Time-Frequency Color-Clustered MIMO Based on BCYR LEDs

  • Han, Phyu Phyu;Sewaiwar, Atul;Chung, Yeon-Ho
    • Journal of the Optical Society of Korea
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    • 제20권2호
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    • pp.276-282
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    • 2016
  • A 2 Gbit/s visible-light communication (VLC) scheme using time-frequency color-clustered (TFCC) multiple-input multiple-output (MIMO) based on blue, cyan, yellow, and red (BCYR) light-emitting diodes (LEDs) is presented. In the proposed scheme, BCYR LEDs are employed to form four different color clusters. Data transmission using the four color clusters is performed in MIMO, so that the scheme achieves a very high speed of data transmission. Moreover, the scheme employs the TFCC strategy to yield high performance in terms of bit error rate (BER). TFCC operates in such a way that the original data and the two delayed versions of the data are multiplied by orthogonal frequencies and then transmitted using a specific color of the BCYR LED. In the receiver, color filters are employed to detect the data transmitted from the desired cluster. Selection combining (SC) is also performed to yield a diversity effect within each color cluster, to further improve the performance. Performance evaluation demonstrates that the proposed TFCC MIMO VLC offers a data rate of 2 Gbit/s and a bit error rate of 4×10-5, at an Eb/No value of merely 3 dB.

DC - 18GHz의 광대역 레이저 구동회로 제작 및 특성 (Farbrication and perfomance of a laser driver IC with broad bandwidth of DC - 18 GHz)

  • 박성호;이태우;기현철;김충환;김일호;박문평
    • 전자공학회논문지D
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    • 제35D권1호
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    • pp.34-40
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    • 1998
  • For applicating to 10-Gbit/s optical transimission systems, we have designed and fabricated a laser driver IC with extremely-high-operation-frequencies using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and have investigated its performances. Circuits design andsimulation were performed using SPICE and LIBRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5*10 .mu.m$^{2}$, used for the circuit fabrication, exhibited cutoff frequency of 63 GHz andmaximum osciallation frquency of 50 GHZ. After fabrication of MMICs, we observed the very wide bandwidth of DC~18 GHz and the S$_{21}$ gain of 17 dB for a laser driver IC from the on-wafer measurement. Metal-packaged laser driver IC showed the excellent eye opening, the modulation currents of 32 mA, the rise/fall time of 40 ps, measured at the data rates of 10-Gbit/s.

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