• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.182-188
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• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.94-97
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• 2003

본 연구에서는 반도체제조에 필수적으로 사용되는 플라즈마장비의 성능을 예측.분석하여 개발 시간 및 비용의 절감과 장비의 성능을 극대화 할 수 있도록 이론적 전산모사 환경(VIP-SEPCAD)을 개발하고 있다. VIP-SEPCAD는 플라즈마의 물리.화학적 특성을 예측하는 plasma model, 중성화학종들의 반응 및 유돈 특성을 예측하는 neutral reaction-transport model, particle의 유동 특성을 예측하는 particle transport model, particle의 생성 및 성장 특성을 예측하는 particle formation-growth model, 식각 또는 증착되는 웨이퍼 표면변화를 예측하는 surface evolution model로 구성되어 있다. 현재 개발된 VIP-SEPCAD를 이용하여 산소 플라즈마의 특성과 각종 화학성분들의 분포를 예측하고 particle의 거동에 대하여 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.124-124
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.126-129
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.583-586
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• 2000

The non-selective method by polishing after grinding was used widely to thinning of SDB SOI structures. This method was very difficult to thickness control of thin film, and it was dependent on equipments. However electrochemical etch-stop, one of the selective methods, was able to accurately thickness control and etch equipment was very simple. Therefore, this paper described with the effect of leakage current and electrodes on electrochemical etch-stop. Consequentially, PP(passivation potential) was changed according to the kinds of contact and contact sizes, but OCP(open current potential) was not change with range of -1.5~-1.3V

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.579-582
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• 2000

This paper described on the fabrication of SOI(Si-on-insulator) structures with buried cavities by SDB technology and eletrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annaling(100$0^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated the SDB SOI structure with buried cavities as well as an accurate control and a good flatness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.431-436
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM respectively.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.76-79
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• 2005

Dry etching of NiFe, NiFeCo, and Ta for magnetic random access memory (MRAM) by inductively coupled plasmas (ICPs) of $Cl_2/Ar$ has been carried out. NiFe and NiFeCo showed maximum etch rates at a particular ICP source power, but the etch rate of Ta increased with the ICP source power. The etch rates of the magnetic thin films increased with the RF chuck power, but decreased with the operating pressure and the $Cl_2$ concentration. To avoid a corrosion problem by chlorine, the etched samples were rinsed with de-ionized water for 5 minutes after etching. The etch profile showed a clean and smooth surface at 50% $Cl_2$ concentration.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.133-133
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• 2002

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.1-6
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• 2000

Recently, SrBi$_{2}$Ta$_{2}$ $O_{9}$(SBT) and Pb(Zr,Ti) $O_{3}$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) with higher read/ write speed, lower power consumption and nonvolartility. SBT thin film has appeared as the most prominent fatigue free and low operation voltage. To highly integrate FRAM, SBT thin film has to be etched. A lot of papers have been reported over growth of SBT thin film and its characteristics. However, there are few reports about etching SBT thin film owing to difficult of etching ferroelectric materials. SBT thin film was etched in CF$_{4}$Ar plasma using magnetically enhanced inductively coupled plasma (MEICP) system. In order to investigate the chemical reaction on the etched surface of SBT thin films, X-ray Photoelecton spectrosocpy (XPS) and Secondary ion mass spectroscopy(SIMS) was performed.