Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.11a
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- Pages.579-582
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- 2000
Fabrication of SOI structures whit buried cavities by SDB and elelctrochemical etch-stop
SDB와 전기화학적 식각정지에 의한 매몰 cavity를 갖는 SOI구조의 제작
Abstract
This paper described on the fabrication of SOI(Si-on-insulator) structures with buried cavities by SDB technology and eletrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annaling(100
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