• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.367-372
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• 2002

The vertically well-aligned carbon nanotubes(CNTs) were successfully grown on Ni coated silicon wafer substrate by DC bias-assisted PECVD(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15~30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of gas mixture such as $C_2H_2-NH_3$ was systematically investigated by adjusting the gas mixing ratio at $570^{\circ}C$ under 0.4Torr. The diameter of the grown CNTs was 40~200nm and the diameter of the CNTs increased with increasing the Ni particles size. TEM images clearly showed carbon nanotubes to be multiwalled. The measured turn-on field was $3.9V/\mu\textrm{m}$ and an emission current of $1.4{\times}10^4A/\textrm{cm}^2$ was $7V/\mu\textrm{m}$. The CNTs grown by bias-assisted PECVD was able to demonstrate high quality in terms of vertical alignment, crystallization of graphite and the processing technique at low temperature of $570^{\circ}C$ and this can be applied for the emitter tip of FEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.501-506
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• 2006

Carbon nanotubes (CNTs) were grown with a microwave plasma enhanced chemical vapor deposition (MPECVD) method, which has been regarded as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. MPECVD used methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 10 nm thick Ni catalytic layer were deposited on the Ti coated Si substrate by RF magnetron sputtering method. In this work, the pretreatment was that the Ni catalytic layer in different microwave power (600, 700, and 800 W). After that, CNTs deposited on different pressures (8, 12, 16, and 24 Torr) and grown same microwave power (800 W). SEM (Scanning electron microscopy) images showed Ni catalytic layer diameter and density variations were dependent with their pretreatment conditions. Raman spectroscopy of CNTs shows that $I_D/I_G$ ratios and G-peak positions vary with pretreatment conditions.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.71-75
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• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and are analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene($C_2H_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen($H_2$) gas plasma indicates better vertical alignment, lower temperature process and longer tip, compared to that grown by ammonia($NH_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be $2.6\;V/{\mu}m$. We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.245-252
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• 2015

In recent years, the cleaning and activation technology of surfaces using atmospheric plasma as well as the deposition technology for coating using atmospheric plasma have been demonstrated conclusively and drawn increasing industrial attention. Especially, due to the simplicity, the technology using atmospheric plasma enhanced chemical vapor deposition has been widely studied from many researchers. The plasma source type commonly used as the stabilization of diffuse glow discharges for atmospheric pressure plasma enhanced chemical vapor deposition pressure is the dielectric barrier discharge. In this review paper, some kinds of modified dielectric barrier discharge type will be presented. And, the characteristics of silicon based compound such as SiOx and SiNx deposited using atmospheric plasma enhanced chemical vapor system will be discussed.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.334-341
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• 2011

The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.2
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• pp.51-56
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• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Composites Research
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• v.28 no.4
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• pp.239-243
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• 2015

Recent studies regarding the properties of carbon nanotubes (CNT) have made remarkable progress in CNT fibers research. However no CNT fibers showed the properties of CNTs because CNTs in fibers have weak interfacial bonding with low shear modulus in the pristine form. Thus, it is upmost interest to develop and employ post-production treatments to the CNT fibers that would potentially improve their properties. In this study, post-treatments resulted in improvement of strength of CNT fibers up to 40%.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.389-396
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• 2008

The effect of thermal cycling on bond strength and residual stress at the interface between benzocyclobutene (BCB) and plasma enhanced chemical vapor deposited (PECVD) silicon dioxide ($SiO_2$) coated silicon wafers were evaluated by four point bending and wafer curvature techniques. Wafers were bonded using a pre-established baseline process. Thermal cycling was done between room temperature and a maximum peak temperature. In thermal cycling performed with 350 and $400^{\circ}C$ peak temperature, the bond strength increased substantially during the first thermal cycle. The increase in bond strength is attributed to the relaxation in residual stress by the condensation reaction of the PECVD $SiO_2$: this relaxation leads to increases in deformation energy due to residual stress and bond strength.