Korean Chemical Engineering Research

The Korean Institute of Chemical Engineers (한국화학공학회)
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A Study on the Effects of High Temperature Thermal Cycling on Bond Strength at the Interface between BCB and PECVD SiO2 Layers

고온 열순환 공정이 BCB와 PECVD 산화규소막 계면의 본딩 결합력에 미치는 영향에 대한 연구

  • Kwon, Yongchai (Department of Chemical and Environmental Technology, Inha Technical College) ;
  • Seok, Jongwon (School of Mechanical Engineering, College of Engineering, Chung-Ang University) ;
  • Lu, Jian-Qiang (Focus Center - New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute) ;
  • Cale, Timothy S. (Focus Center - New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute) ;
  • Gutmann, Ronald J. (Focus Center - New York, Rensselaer: Interconnections for Hyperintegration, Rensselaer Polytechnic Institute)
  • 권용재 (인하공업전문대학 화공환경과) ;
  • 석종원 (중앙대학교 기계공학부) ;
  • ;
  • ;
  • Received : 2007.07.02
  • Accepted : 2007.11.06
  • Published : 2008.04.30
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Abstract

The effect of thermal cycling on bond strength and residual stress at the interface between benzocyclobutene (BCB) and plasma enhanced chemical vapor deposited (PECVD) silicon dioxide ($SiO_2$) coated silicon wafers were evaluated by four point bending and wafer curvature techniques. Wafers were bonded using a pre-established baseline process. Thermal cycling was done between room temperature and a maximum peak temperature. In thermal cycling performed with 350 and $400^{\circ}C$ peak temperature, the bond strength increased substantially during the first thermal cycle. The increase in bond strength is attributed to the relaxation in residual stress by the condensation reaction of the PECVD $SiO_2$: this relaxation leads to increases in deformation energy due to residual stress and bond strength.

벤조시클로부텐(benzocyclobutene; BCB)과 플라즈마 화학기상증착(PECVD)된 산화규소막이 코팅된 웨이퍼들 사이의 계면에서, 고온 열순환 공정에 의한 잔류응력 및 본딩 결합력의 효과를 4점 굽힙시험법과 웨이퍼 곡률 측정법에 의해 평가하였다. 이를 위해 웨이퍼들은 사전에 확립된 표준 본딩공정에 의거하여 본딩하였으며 이들 웨이퍼에 대한 열순환 공정은 상온으로부터 최대 순환온도 사이에서 수행하였다. 최대 온도 350 및 $400^{\circ}C$에서 수행한 열순환 공정에서, 본딩 결합력은 첫번째 순환공정 동안 크게 증가하는 데, 이는 순환공정 시 발생하는 산화규소막의 축합 반응에 의한 잔류응력 감소 때문인 것으로 분석되었다. 이러한 산화규소막의 잔류응력이 감소함에 따라 BCB와 산화규소막으로 구성된 다층막의 잔류응력에 의해 변형되는 에너지는 상승하였고 따라서 BCB와 산화규소막 사이 다층막의 의 본딩 결합력은 증가하였다.

Keywords

References

  1. Davis, J. A., Venkatesan, R., Kaloyeros, A., Beylansky, M., Souri, S. J., Banerjee, K., Saraswat, K. C., Rahman, A., Reif, R. and Meindl, J. D., "Interconnect Limits on Gigascale Integration (GSI) in the 21st Century," Proc. IEEE, 89(3), 305-324(2001)
  2. Kwon, Y., Jindal, A., McMahon, J. J., Lu, J.-Q., Gutmann, R. J. and Cale, T. S., "Dielectric Glue Wafer Bonding for 3D Ics," Mater. Res. Soc. Symp. Proc., 766, 27-32(2003)
  3. Lu, J.-Q., Kwon, Y., Rajagopalan, G., Gupta, M., McMahon, J., Lee, K.-W., Kraft, R. P., Jindal, A., McDonald, J. F., Cale, T. S., Gutmann, R. J., Xu, B., Eisenbraun, E., Castracane, J. and Kaloyeros, A., "A Wafer-Scale 3D IC Technology Platform using Dielectric Bonding Glues and Copper Damascene Patterned Inter-Wafer Interconnects," 2002 IEEE Int'l Interconnect Technol. Conf., 78-80(2002)
  4. Gutmann, R. J., Lu, J.-Q., Kraft, R. P., McDonald, J. F. and Cale, T. S., "Three-Dimensional (3D) ICs: A Technology Platform for Integrated Systems and Opportunities for New Polymeric Adhesives," 2001 IEEE on Polymers and Adhesives in Microelectronics and Photonics, 173-180(2001)
  5. Sakamoto, S. R., Ozturk, C., Byun, Y. T., Ko, J. and Dagli, N., "Low-Loss Substrate-Removed(SURE) Optical Waveguides in GaAs-AlGaAs Epitaxial Layers Embedded in Organic Polymers," IEEE Photon. Technol. Lett., 10(7), 985-987(1998) https://doi.org/10.1109/68.681292
  6. Niklaus, F., Enoksson, P., Griss, P., Kalvesten, E. and Stemme, G., "Low-Temperature Full Wafer Adhesive Bonding," J. Microelectrochemical Systems, 10(4), 525-531(2001) https://doi.org/10.1109/84.967375
  7. Lingk, C., Gross, M. E. and Brown, W. L., "Texture Development of Blanket Electroplated Copper Films," J. Appl. Phys., 87(5), 2232-2236(2000) https://doi.org/10.1063/1.372166
  8. Kim, D. H., Wentorf, R. H. and Gill, W. N., "Film Growth Kinetics of Chemical Vapor Deposition of Copper Film $Cu(HFA)_{2}$," J. Electrochem. Soc., 140(11), 3267-3272(1993) https://doi.org/10.1149/1.2221021
  9. Kwon, Y., "Wafer Bonding for 3D Integration," Ph.D. Thesis, Rensselaer Polytechnic Institute, Troy, NY(2003)
  10. Suo, Z. and Hutchinson, J. W., "The Thermomechanical Integrity of Thin Films and Multilayers," Acta. Metall. Mater., 43, 2507-2530(1995) https://doi.org/10.1016/0956-7151(94)00444-M
  11. Sha, Y., Hui, C. Y., Kramer, E. J., Hahn, S. F. and Berglund, C. A., "Fracture Toughness and Failure Mechanism of Epoxy/Rubber- Modified Polystyrene (HISP) Interfaces by Grafted Chains," Macromolecules, 29(13), 4728-4736(1996) https://doi.org/10.1021/ma951794i
  12. Thurn, J. and Cook, R. F., "Stress Hysteresis during Thermal Cycling of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films," J. Appl. Phys., 91(4), 1988-1992(2002) https://doi.org/10.1063/1.1432773
  13. Chen, F., Li, B. Z., Sullivan, T. D., Gonzalez, C. L., Muzzy, C. D., Lee, H. K., Dashiell, M. W., Kolodzey, J. and Levy, M. D., "Influence of Underlying Interlevel Dielectric Films on Extrusion Formation in Aluminum Interconnects," J. Vac. Sci. Technol. B, 18(6), 2826-2834(2000) https://doi.org/10.1116/1.1319691
  14. Vandevelde, B. and Beyne, E., "Improved Thermal Fatigue Reliability for Flip Chip Assemblies using Redistribution Techniques," IEEE Trans. Adv. Pack., 23(2), 239-246(2000) https://doi.org/10.1109/6040.846641
  15. Garrou, P. E., Scheck, D., Im, J.-H., Hetzner, J., Meyers, G., Hawn, D., Wu, J. L., Vincent, M. B. and Wong, C. P., "Underfill Adhesion to BCB(CycloteneTM) Bumping and Redistribution Dielectronics," IEEE Trans. Adv. Pack., 23(3), 568-573(2000) https://doi.org/10.1109/6040.861575
  16. Chyan, O., Arunagiri, T. N. and Ponnuswamy, T., "Electrodeposition of Copper Thin Film on Ruthenium," J. Electrochem. Soc., 150(5), C347-C350(2003) https://doi.org/10.1149/1.1565138
  17. Rye, R. R. and Ricco, A. J., "Patterned Adhesion of Electrolessly Depositied Copper on Poly(tetrafluoroethylene)," J. Electrochem. Soc., 140(6), 1763-1768(1993) https://doi.org/10.1149/1.2221638
  18. Im, J.-H., University of Texas, Austin, TX, private communication
  19. Kwon, Y. and Seok, J., "An Evaluation Process of Polymeric Adhesive Wafer Bonding for Vertical System Integration," Japanese J. Applied Physics Part 1, 44(6A), 3893-3902(2005) https://doi.org/10.1143/JJAP.44.3893
  20. Kwon, Y., Seok, J., Lu, J.-Q., Cale, T. S. and Gutmann, R. J., "A Study on Wafer-Level 3D Integration Including Wafer Bonding using Low-k Polymeric Adhesive," Korean. Chem. Eng. Res., 45(5), 466-472(2007)
  21. Kwon, Y., Seok, J., Lu, J.-Q., Cale, T. S. and Gutmann, R. J., "A Study on the Bond Strength of BCB-Bonded Wafers," Korean. Chem. Eng. Res., 45(5), 479-486(2007)
  22. Charalambides, P. G., Lund, J., Evans, A. G. and McMeeking, R. M., "A Test Specimen for Determining the Fracture Resistance of Bimaterial Interfaces," J. Appl. Mech., 56(1), 77-82(1989) https://doi.org/10.1115/1.3176069
  23. Charalambides, P. G., Cao, H. C., Lund, J. and Evans, A. G., "Development of A Test Method for Measuring The Mixed Mode Fracture Resistance of Bimaterial Interfaces," Mechanics of Materials, 8(4), 269-283(1990) https://doi.org/10.1016/0167-6636(90)90047-J
  24. Stoney, G. G., "The Tension of Metallic Films Deposited by Electrolysis," Proc. R. Soc. London, Ser. A, 82, 172(1909)
  25. Garrou, P. E., Heistand, R. H., Dibbs, M. G., Mainal, T. A., Mohler, C. E., Stokich, T. M., Townsend, P. H., Adema, G. M., Berry, M. J. and Turlik, I., "Rapid Thermal Curing of BCB Dielectric," IEEE Trans. Comp., Hybrids Manufact. Technol., 16(1), 46-52(1993) https://doi.org/10.1109/33.214859
  26. Morgan, M., Zhao, J.-H., Hay, M., Cho, T. and Ho, P. S., "Structure- Property Correlation in Low k Dielectric Materials," Mater. Res. Soc. Symp. Proc., 565, 69-75(2000)
  27. Haque, M. S., Naseem, H. A. and Brown, W. D., "The Effects of Moisture on Strain Relief of Si-O Bonds in PECVD Silicon Dioxide Films," J. Electrochem. Soc., 144(9), 3265-3270(1997) https://doi.org/10.1149/1.1837995