• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.479-486
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• 2007

Four point bending is used to study the dependences of bond strength of benzocyclobutene(BCB) bonded wafers and BCB thickness, the use of an adhesion promoter, and the materials being bonded. The bond strength depends linearly on BCB thickness, due to the thickness-dependent contribution of the plastic dissipation energy of the BCB and thickness independence of BCB yield strength. The bond strength increases by about a factor of two with an adhesion promoter for both $2.6{\mu}m$ and $0.4{\mu}m$ thick BCB, because of the formation of covalent bonds between adhesion promoter and the surface of the bonded materials. The bond strength at the interface between a silicon wafer with deposited oxide and BCB is about a factor of three higher than that at the interface between a glass wafer and BCB. This difference in bond strength is attributed to the difference in Si-O bond density at the interfaces. At the interfaces between plasma enhanced chemical vapor deposited (PECVD) oxide coated silicon wafers and BCB, and between thermally grown oxide on silicon wafers and BCB, 12~13 and $15{\sim}16bonds/nm^2$ need to be broken. This corresponds to the observed bond energies, $G_0s$, of 18 and $22J/m^2$, respectively. Maximum 7~8 Si-O $bonds/nm^2$ are needed to explain the $5J/m^2$ at the interfaces between glass wafers and BCB.

• Journal of Embryo Transfer
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• v.24 no.1
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• pp.39-45
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• 2009

This study was carried out to evaluate the nuclear, cytoplasmic maturation and developmental potential of bovine oocytes selected by brilliant cresyl blue (BCB) as indirect measurement of oocytes growth phase. Cumulus-oocyte complexes (COCs) were collected from 2 to 8 mm follicles from slaughterhouse Hanwoo ovaries. The COCs were divided into stained cytoplasm to blue (BCB+) and unstained (BCB-) according to their ooplasm BCB coloration stained by $26{\mu}m$ of BCB after 90 min. Selected COCs were cultured in a TCM 199 for 18 to 26 h. Nuclear maturation and total cell number was evaluated after in vitro maturation (IVM) or in vitro culture (IVC) using $10{\mu}g/ml$ Hoechst 33342, and cytoplasmic maturation was evaluated by intracellular glutathione (GSH) assay before (0 h) and after (24 h) IVM. The oocyte diameters were not differed significantly between BCB+ ($157.4{\pm}5.8{\mu}m$) and BCB+ ($149.0{\pm}31.0{\mu}m$) groups (p>0.05). However, the proportion of metaphase II oocytes in BCB+ group was significantly higher than BCB- group after IVM (p<0.05). GSH content of BCB+ group oocytes was significantly higher than that of BCB- group just after collection ($7.3{\pm}0.6$ vs. $4.8{\pm}0.6\;pmol/oocyte$, p<0.05), but not varied after IVM($13.1{\pm}0.9$ and $12.6{\pm}2.5\;pmol/oocytes$ for BCB+ and BCB- respectively; p>0.05). The proportion of blastocyst formation and total cell number in BCB+ group (23.5% and $105.5{\pm}28.6$) was significantly higher than that in BCB- (9.8% and $72.4{\pm}26.1$; p<0.05). The results indicate that BCB+ group oocytes may provide a cellular and functional basis for the greater developmental competence in Korean Native Cow (KNC) oocytes.

• Reproductive and Developmental Biology
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• v.33 no.1
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• pp.29-33
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• 2009

The brilliant cresyl blue (BCB) has been used to select the developmental competent oocytes in pigs, goats and cows. Growing oocytes have a higher level of active glucose-6-phosphate dehydrogenase(G6PDH) compare to mature oocytes and are rarely stained compared to mature oocytes, because G6PDH converts BCB to colorless. First polar body extrusion regard as a guideline of meoisis completion. Selection of polar body extrude oocyte is more developmental competent to blastocyst than unselected. This study was conducted to compare the BCB test to the polar body extrusion on selection of developmental competent porcine oocytes for the production of blastocyst. Cumulus-Oocytes complex were exposed to 26uM BCB stain diluted in NCSU-23 for 90 min. There was no significant difference embryo development to blastocysts between BCB treated and not treated($19.58{\pm}1.99$ vs $18.75{\pm}2.27%$), which means there was no detrimental effect of BCB exposure to oocytes. Normal fertilization is not differed among treatment groups from 70.0 to 78.4% development to blastocyst, beside polyspermy did not. To compare two different selection methods, BCB test and polar body extrusion, evaluate the developmental competent of IVP embryos. BCB+PB+(blue stained and polar body extruded, $20.71{\pm}0.45%$) and BCB-PB+(colorless and polar body extruded, $20.04{\pm}l.29%$) groups are significantly (p<0.05) higher developed than those of BCB+PB-(blue stained and no polar body, $13.24{\pm}0.73%$) and BCB-PB-(colorless and no poladbody, $7.25{\pm}0.77%$). These results showed that selection of polar body extruded oocytes method is more efficient than that of BCB test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.351-355
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• 2001

Via for achieving reliable fabrication of MCM(Multichip Module) substrate was formed on photosensitive BCB layer. The MCM substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in the photosensitive BCB layer, the process of forming the BCB layer and its via forming plasma etch using C$_2$F$\_$6//O$_2$ gas were evaluated. The thickness of the BCB layer after hard bake was shrunk down to 40% of the original. The resolution of vias formed on the BCB was 15㎛ and the slope after develop was 85 degree. AES analysis was done on two vias, one is etched in C$_2$F$\_$6/O$_2$ gas and the other isnot etched. On the via etched in C$_2$F$\_$6//O$_2$, native C was detected and the amount of native C was reduced after Ar sputter. On the via not etched in C$_2$F$\_$6//O$_2$, organic C was detected. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable vias.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.7-12
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• 1998

감광성 BCB를 사용한 MCM-D기판에 신뢰성있는 비아형성을 위하여 BCB의 공정 특성과 C2F6를 사용한 플라즈마 cleaning 영향을 분석하였다. 절연막, 금속배선재료로 각각 감광성 BCB, Cu를 사용하여 MCM-D 기판을 제작 분석한 결과 BCB는 soft bake 후 초기 두께의 50%정도 두께 손실이 있었으며 해상도는 15um이었다. BCB층에 비아 형성후 C2F6 가스로 플라즈마 cleaning 하고 AES로 비아표면을 분석한 결과 유기물 C는 검출되지 않은 반면 플라즈마 cleaning을 하지 않은 비아를 분석한 결과 유기물 성분의 C가 많이 검출되었 고 Ar 스퍼터에 의해서도 완전히 제거되지 않았다. 따라서 감광성 BCB를 절연막으로 사용 한 MCM-D 기판 제작공정에서 비아 형성후 C2F6를 이용한 플라즈마 cleaning의 필요성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.99-102
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• 2000

Via for achieving reliable fabrication of MCM-D substrate was formed on the photosensitive BCB layer. MCM-D substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in photosensitive BCB layer, the process of BCB and plasme etch using $C_2$F$_{6}$ gas were evaluated. The thickness of BCB after soft bake was shrunk down to 60% of the original. AES analysis was done on two vias, one is etched in $C_2$F$_{6}$ gas and the other is non etched. On via etched in $C_2$F$_{6}$, native C was detected and the amount of native C was reduced after Ar sputter. On via non etched in $C_2$F$_{6}$, organic C was detected and amount of organic C was reduced a little after Ar sputter. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable via.ble via.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.57-61
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• 2021

A formation process of indium bump arrays on micro-pillar structures is proposed. The space to form indium bump on the narrow structures can be secured applying the benzocyclobutene (BCB) planarization and its etch-back process. We exhibit a detailed overview of the process steps involved in the fabrication of 320×256 hybrid camera sensor for short-wavelength infrared (SWIR) detection. The shear strength of the BCB, which has undergone the different processes, is extracted by quartz crystal microbalance measurement. The shear strength of the BCB is three orders of magnitude higher than that of the indium bump itself. The measured dark current distribution of the fabricated SWIR camera sensor indicates the suggested process of indium bumps can be useful for embodying highly sensitive infared camera sensors.

• Korean Journal of Pharmacognosy
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• v.48 no.4
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• pp.273-279
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• 2017

The aim of this study was to investigate the mechanisms underlying apoptosis induced by a broussochalcone B (BCB) from Broussonetia papyrifera in HepG2 cells. The results showed that BCB treatment for 24 hr significantly inhibited cell viability in a dose-dependent manner, and induced apoptosis in HepG2 cells. More so, BCB treatment triggered the cleavage of caspase-8, -9, -3, poly (ADP-ribose) polymerase (PARP), increase of Bax level, and decrease of Bcl-2 expression. A general caspase inhibitor (z-VAD-fmk) blocked BCB-induced cell death. Furthermore, BCB treatment caused reactive oxygen species (ROS) production in a dose-dependent manner. In addition, an antioxidant N-acetylcysteine (NAC) blocked BCB-induced ROS production and cell death. Therefore, these results indicate that BCB-induced apoptosis is mediated by a caspase dependent pathway and ROS production in HepG2 cells.

• Asian-Australasian Journal of Animal Sciences
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• v.28 no.12
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• pp.1703-1712
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• 2015

The in vitro maturation (IVM) efficiency of porcine embryos is still low because of poor oocyte quality. Although brilliant cresyl blue positive (BCB+) oocytes with low glucose-6-phosphate dehydrogenase (G6PDH) activity have shown superior quality than BCB negative (-) oocytes with high G6PDH activity, the use of a BCB staining test before IVM is still controversial. This study aimed to shed more light on the subcellular characteristics of porcine oocytes after selection using BCB staining. We assessed germinal vesicle chromatin configuration, cortical granule (CG) migration, mitochondrial distribution, the levels of acetylated lysine 9 of histone H3 (AcH3K9) and nuclear apoptosis features to investigate the correlation between G6PDH activity and these developmentally related features. A pattern of chromatin surrounding the nucleoli was seen in 53.0% of BCB+ oocytes and 77.6% of BCB+ oocytes showed peripherally distributed CGs. After IVM, 48.7% of BCB+ oocytes had a diffused mitochondrial distribution pattern. However, there were no significant differences in the levels of AcH3K9 in the nuclei of blastocysts derived from BCB+ and BCB- oocytes; at the same time, we observed a similar incidence of apoptosis in the BCB+ and control groups. Although this study indicated that G6PDH activity in porcine oocytes was correlated with several subcellular characteristics such as germinal vesicle chromatin configuration, CG migration and mitochondrial distribution, other features such as AcH3K9 level and nuclear apoptotic features were not associated with G6PDH activity and did not validate the BCB staining test. In using this test for selecting porcine oocytes, subcellular characteristics such as the AcH3K9 level and apoptotic nuclear features should also be considered. Adding histone deacetylase inhibitors or apoptosis inhibitors into the culture medium used might improve the efficiency of IVM of BCB+ oocytes.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.551-554
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• 2011

One of the key issues in the research of organic field-effect transistors (OFETs) is the low-voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross-linking. The pentacene FETs based on the 34 nm-thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of $0.25cm^2/Vs$, a threshold voltage of -2 V, an sub-threshold slope of 400 mV/decade, and an on/off current ratio of ${\sim}10^5$. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.