Korean Chemical Engineering Research

The Korean Institute of Chemical Engineers (한국화학공학회)
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Bond Strength of Wafer Stack Including Inorganic and Organic Thin Films

무기 및 유기 박막을 포함하는 웨이퍼 적층 구조의 본딩 결합력

  • Kwon, Yongchai (Department of Chemical and Environmental Technology, Inha Technical Collage) ;
  • Seok, Jongwon (School of Mechanical Engineering, College of Engineering Chung-Ang University)
  • 권용재 (인하공업전문대학교 화공환경과) ;
  • 석종원 (중앙대학교 기계공학부)
  • Received : 2007.12.07
  • Accepted : 2008.03.05
  • Published : 2008.06.30
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Abstract

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

패시베이션 및 절연 목적으로 이용하는 플라즈마 화학기상증착(PECVD)법에 의해 증착된 무기막과 웨이퍼 간 본딩 접착제로 이용하는 유기 박막 적층면의, 열 순환에 의한 잔류 응력 및 본딩 결합력의 효과를 4점 굽힙 시험법과 웨이퍼 곡률 측정법에 의해 평가하였다. 무기막으로는 산화 규소막($SiO_2$)과 산화 질화막($SiN_x$)이, 유기 박막으로는 BCB(Benzocyclobutene)가 이용되었다. 이를 통해, 열 순환 동안 무기막과 유기막 사이에서의 잔류 응력과 본딩 결합력의 상관관계에 대한 모델식을 개발하였다. 최대 온도 350 및 $400^{\circ}C$에서 수행한 열 순환 공정에서, PECVD 산화 질화막과 BCB로 구성된 다층막에서, 본딩 결합력은 첫 번째 순환 공정 동안 감소한다. 이는 산화질화막 내 잔류인장응력의 증가가 다층막의 잔류응력에 의해 변형되는 에너지 및 본딩 결합력의 감소를 유도한다는 모델식의 예측과 일치하며, PECVD 산화 규소막내 잔류 압축 응력의 감소가 다층막의 잔류응력에 의해 변형되는 에너지 및 본딩 결합력 상승을 이끄는 산화 규소막과 BCB 구조의 본딩 결합력 결과와 비교된다. 이러한 산화 규소막과 산화 질화막을 포함한 다층막의 상반된 본딩 결합력은 증착 공정 후 막 내에 형성된 수소 결합이 고온 순환 공정 동안 축합 반응을 통해 더 밀집되어 인장응력을 형성하기 때문임을 알 수 있었다.

Keywords

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