• Progress in Superconductivity
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• v.9 no.1
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• pp.102-106
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• 2007

YBCO films have been synthesized using a spray pyrolysis method. We used nitrates of Y, Ba, Cu as precursors. Deposition was made on $LaAlO_3$ (100) single crystal substrate by spraying the mist of aqueous precursor solution generated by a concentric nozzle. The distance between concentric nozzle and substrate was 15 cm. C-axis oriented films were obtained at deposition temperature of $740{\sim}800^{\circ}C$ and working pressure of 20 Torr. Oxygen partial pressure was 3 Torr and substrate was transported with the speed ranging from 0.23 cm/min to 0.7 cm/min by reel to reel. Scanning electron microscope (SEM) and X-ray diffraction (XRD) observation revealed that films are smooth and highly textured with (001) planes parallel to substrate. Highest critical current density (Jc) was $1.38\;MA/cm^2$ at 77K and self-field for the film with a thickness of $0.5\;{\mu}m$ prepared at a substrate temperature of $780^{\circ}C$ and $PO_2\;=3\;Torr$. The effect of temperature on the microstructure and YBCO phase formation will be discussed.

• Progress in Superconductivity
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• v.9 no.1
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• pp.5-10
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• 2007

We prepared four different $MgB_2$ films on $Al_2O_3$ by hybrid physical chemical vapor deposition method with thicknesses ranging from $0.65\;{\mu}m$ to $1.2\;{\mu}m$. X-ray diffraction patterns confirm that all the $MgB_2$ films are c-axis oriented perpendicular to $Al_2O_3$ substrates. The superconducting onset temperature of $MgB_2$ films were between 39.39K and 40.72K. The residual resistivity ratio of the $MgB_2$ films was in the range between 3.13 and 37.3. We measured the angle dependence of critical current density ($J_c$) and resistivity, and determined the upper critical field ($H_{c2}$) from the temperature dependence of the resistivity curves. The anisotropy ratios defined as the ratio of the $H_{c2}$ parallel to the ab-plane to that perpendicular to the ab-plane were in the range of 2.13 to 4.5 and were increased as the temperature was decreased. Some samples showed increase of $J_c$ and decrease of resistivity when a magnetic field in applied parallel to the c-axis. We interpret this angle dependence in terms of enhanced flux pinning due to columnar growth of $MgB_2$ along the c-axis.

• Progress in Superconductivity
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• v.6 no.2
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• pp.118-123
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• 2005

A low cost YBCO oxide powder was employed as a starting precursor for MOD process. YBCO oxide is advantageous over metal acetates or TFA salts which are popular starting precursors for conventional MOD-TFA process because that YBCO oxide precursor is cheap and easy to control molar ratio. YBCO thin films were prepared by this oxide-precursor-based MOD process and annealing condition was optimized. The YBCO thin film annealed at below $780^{\circ}C$ shows no transport $I_c$ and poor microstructure. Raman spectroscopic study of YBCO thin film indicates that YBCO thin film prepared at below $780^{\circ}C$ contains a number of imperfections such as non-superconducting $BaCuO_2$ phase, cation disorder, etc. However, the YBCO thin film treated at above $800^{\circ}C$ shows improvement in microstructure and current transport properties. This research was supported by a grant from Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

• Progress in Superconductivity
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• v.7 no.1
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• pp.87-91
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• 2005

[ $YBa_{2}Cu_{3}O_{7-x}$ ] thin films were fabricated on $LaAlO_3$(100) substrate by TFA-MOD process. Yttrium-excess (0, 2.5, 5, 10, 15, 20 $at\%$) coating solution was prepared by adding extra amount of yttrium into a stoichiometric(Y:Ba:Cu=1:2:3) TFA precursor solution. Results are presented concerning the influence of excess yttrium additions on the microstructure development and superconducting properties of $YBa_{2}Cu_{3}O_{7-x}$ film. Large sized CuO particles was observed by SEM EDS investigation. The addition of excess yttrium affected little on $T_c$ of $YBa_{2}Cu_{3}O_{7-x}$ film. $J_c$ of YBCO film was enhanced with excess yttrium addition. Jc maximum of $2.21\;MA/cm^2$ (77 K, self field) appeared with the $15\;at\%$ addition of excess yttrium. With further yttrium addition up to $20\;at\%$, Jc decreased down to $0.9\;MA/cm^2$.

• Progress in Superconductivity
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• v.7 no.1
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• pp.92-96
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• 2005

YBCO thin films on metal substrates were prepared by the metal-organic deposition using trifluoroacetates (TFA-MOD). To compensate the loss of Ba element from the precursor films due to the reaction with $CeO_2$ cap layer, we have employed Ba-excessive precursor solutions of $YBa_{2+x}Cu_{3}O_{7-{\delta}}$ ($0{\le}x{\le}0.1$). The precursor solutions were dip-coated on the metal substrates with $CeO_2$ cap layer, initially heated up to $400^{\circ}C$, and finally fired at the various high temperatures for 2 h in a reduced oxygen atmosphere. With this approach, YBCO films possessing critical temperature over 85 K could be successfully prepared on the metal substrates. The highest $T_{c,zero}$ value of 86 K was obtained from the Ba-excessive YBCO film of x=0.005 in $YBa_{2+x}Cu_{3}O_{7-{\delta}}$ fired at $750^{\circ}C$ for 2 h. However, unexpected $T_c$ suppression even in Ba-excessive YBCO samples requires further identification.

• Progress in Superconductivity
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• v.5 no.2
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• pp.105-108
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• 2004

We have studied effects of in-situ annealing on the fabrication of superconducting MgB$_2$ thin films prepared by rf magnetron co-sputtering. The Films were deposited on A1$_2$O$_3$ (1102) substrates at room temperature by using Mg and B targets. To trap remnant $O_2$ gas in the chamber, we used 20 mtorr Af sputter-gas balanced with 5 mol % of H$_2$ gas. To enhance adhesion to the substrate a thin layer of B was deposited prior to the codeposition of Mg and B. After completion of the film deposition, an additional Mg layer was deposited on top to compensate for Mg loss during the subsequent in-situ annealing. We have investigated the effects of two most important annealing parameters that are the Mg-to-B composition ratio and the annealing temperature. The range of the Mg-to-B composition ratio was from 0.42 to 0.85, and that of the annealing temperature was 500 $^{\circ}C$∼750 $^{\circ}C$. The Best result was obtained for the composition ratio of about 10% Mg excess from the stoichiometry and the annealing temperature of 700 $^{\circ}C$. Based on these results, we obtained films with T$_{c}$ : 36.5 K by further refining the fabrication process.s.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.11-20
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• 1999

We have designed and fabricated direct-and gap-coupled microstrip hairpin-comb filters by patterning double-sided YBCO films on a single 50-mm-diameter, 0.5-mm-thick $LaAlO_3$ wafer. Both filters have a center frequency at 1.773 GHz, 12 MHz bandwidth, 0.5 dB minimum insertion loss in the passband, and very strong out-of- band rejection. Due to two attenuation poles below and above the passband, the direct-coupled hairpin-comb filter showed a better skirt characteristic than the gapcoupled hairpin-comb filter which had only one attenuation pole below the passband.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.263-267
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• 1998

In this study, we have fabricated in-situ multilayer $YBa_2Cu_3O_{7-\delta}$/$SrTiO_{3}$/$YBa_2Cu_3O_{7-\delta}$ ramp edge type junctions by using a metal mask and pulsed laser deposition method and studied the junction properties. The junctions showed RSJ-like I-V characteristics. The normal state junction resistance R, of $18 \omega$ was nearly constant with temperature. The dc-SQUID sensors fabricated with the junctions show a sensitivity that transfer function dV/$d\Phi$)~$22\mu$V/$\Phi_{0}$, indicating that the in-situ ramp edge type junction is potentially useful for sensor application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Progress in Superconductivity
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• v.2 no.2
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• pp.86-91
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• 2001

Temperature dependences of the unloaded Ｑ(Ｑ$_{0}$) and the resonant frequency ( $f_{0}$) of YB $a_2$C $u_3$ $O_{7-{\delta}}$ (YBCO) microstrip ring resonators and rutile-loaded cylindrical cavity resonators were measured at low temperatures. Dc magnetron-sputtered YBCO films grown on Ce $O_2$-buffered r-cut sapphire (CbS) substrates were used fur this purpose. The surface resistances ( $R_{s}$) of YBCO films measured by both a microstrip ring resonator and a TE $01\delta$/ mode rutile-loaded cylindrical cavity resonator are compared with each other. It turned out that the values of $R_{s}$ measured by the microstrip resonator technique are comparable to those by the rutile-loaded resonator technique at temperatures lower than ~50 K. However, above 50 K, the $R_{s}$ measured by the microstrip resonator technique appeared higher according to the temperature. Our results show that the current crowding effects near the edge of a microstrip resonator become more significant at temperatures near the critical temperature.emperature.e.e.e.e.e.e.