• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.45-53
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• 1994

A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.131-145
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• 1992

This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.54-59
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• 2002

This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

• Journal of Korean Society of Steel Construction
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• v.28 no.5
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• pp.345-354
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• 2016

In the present study, hybrid moment connections of welding and bar reinforcement for composite beam-column connections were proposed. Concrete-filled octagonal tube and U-section were used for the column and beam, respectively. In the beam-column connection, the top flange and web of the beam U-section were connected to the column plate by welding. However, to reduce stress concentration at the weld joints, the bottom flange of the beam was not welded to the column plate. Instead, to transfer the tension force of the beam flange, reinforcing bars passing through the column plate were used. Four exterior connections with conventional welded and hybrid moment connections were tested under cyclic loading and their cyclic behaviors were investigated. The test results showed that the hybrid moment connections successfully transferred the beam moment to the column. The strength and ductility of the hybrid moment connections were comparable to the conventional welded moment connection with exterior diaphragm; however, the connection performance was significantly affected by the details of the hybrid moment connection.

• Journal of the Korea Concrete Institute
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• v.22 no.4
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• pp.585-593
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• 2010

On the basis of the strain-based shear strength model developed in the previous study, a strength model was developed to predict the direct punching shear capacity and unbalanced moment-carrying capacity of interior and exterior slab-column connections. Since the connections are severely damaged by flexural cracking, punching shear was assumed to be resisted mainly by the compression zone of the slab critical section. Considering the interaction with the compressive normal stress developed by the flexural moment, the shear strength of the compression zone was derived on the basis of the material failure criteria of concrete subjected to multiple stresses. As a result, shear capacity of the critical section was defined according to the degree of flexural damage. Since the exterior slab-column connections have unsymmertical critical sections, the unbalanced moment-carrying capacity was defined according to the direction of unbalanced moment. The proposed strength model was applied to existing test specimens. The results showed that the proposed method predicted the strengths of the test specimens better than current design methods.

• Journal of Korean Society of Steel Construction
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• v.13 no.5
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• pp.535-545
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• 2001

A refined method of analysis which is called the Advanced Analysis has been introduced This method is to consider the intial member imperfection residual stress and second-order effects so as to estimate the overall behavior of steel frame accurately Based on the refined plastic hinge method that is more suitable and practical in design practice. the program RPH-2DF is coded using the log model which represents the moment-rotation relationship of connection. The validity of this program is examined by frame test data. Finally to investigate the difference between behaviors of rigid and semi-rigid frame. the 10-story frame analysis results designed by MIDAS-GEN v4.2.2 are compared with the results by RPH-2DF.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.405-405
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• 2007

ZnO는 상온에서 3.38eV의 넓은 밴드갭을 가지는 직접천이형 반도체이며, 60meV의 큰 엑시톤 결합에너지를 가지는 UV 영역의 광소자로 응용할 수 있는 물질이다. 특히 ZnO를 이용한 LED에 대한 연구가 최근 활발히 이루어지고 있다. 그러나 n-ZnO/p-ZnO 동종접합 다이오드는 p-ZnO의 재현성이 없고, 낮은 정공농도를 보이기 때문에 n-ZnO를 기반으로 한 이종접합 다이오드의 개발이 필요하게 되었다. 특히 n-ZnO/p-Si 이종접합 다이오드는 낮은 구동전압과 제조단가가 저렴하다는 장점이 있다 또한 n-ZnO를 스퍼터링을 이용하여 증착할 경우 고온에서 성장함에도 불구하고 케리어 농도 및 이동도가 매우 낮다. 반면 MOCVD 법은 대면적 증착이 가능하고 비교적 낮은 온도에서 박막을 성장할 수 있고 전기적 특성 또한 매우 우수하다. 본 연구에서는 p-Si 기판위에 MOCVD 를 이용하여 n-ZnO를 증착하고, 이를 열처리하여 n-ZnO/p-Si 이종접합 다이오드의 특성 변화를 관찰하고자 하였다. n-ZnO/p-Si 시편을 $N_2$ 및 $O_2$ 가스 분위기에서 열처리한 후 소자의 광학적, 전기적 특성을 관찰하였다.

• Journal of IKEEE
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• v.22 no.1
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• pp.74-79
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• 2018

We analyzed the relationship between center potential and subthreshold swing (SS) of Junctionless Cylindrical Surrounding Gate (JLCSG) and Junctionless Double Gate (JLDG) MOSFET. The SS was obtained using the analytical potential distribution and the center potential, and SSs were compared and investigated according to the change of channel dimension. As a result, we observed that the change in central potential distribution directly affects the SS. As the channel thickness and oxide thickness increased, the SS increased more sensitively in JLDG. Therefore, it was found that JLCSG structure is more effective to reduce the short channel effect of the nano MOSFET.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.11-15
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• 2011

Heat transfer equation is first reviewed and then governing equation of moisture diffusion. Analogy scheme is applied to analysis the moisture absorption problem of polymers. It make possible to numerically analyze the diffusion problem for single medium by using commercial finite element code if it is under the isothermal loading condition. It is extended to special multimaterial system by introducing pressure ratio function, whose moisture characteristics of materials are proportional to temperature only. The weight changes of silicon-nonconductive-polymer joint model due to moisture absorption is measured and been very close to the numerical results as for single media with boundary condition with zero concentration, but yields numerical errors as for multisystem media.

• Journal of Korean Association for Spatial Structures
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• v.12 no.3
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• pp.71-78
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• 2012

The dynamic behavior of spatial structures is different depending on the aspect ration of arch structure, as the rise-span ratio or open-angle, and these spatial structures show differently the character of seismic response in accordance with stiffness and connection of the lower support structures that are directly influenced by earthquake. Therefore, in this paper, dynamic analysis is conducted for seismic response of single layer arch structures by the influence of column's stiffness and connection, to reflect the different vertical and horizontal vibration mode of single layer arch structures. The vertical response of single layer arch structures is more influence by lower columns and the influence of column's connection rotational stiffness is not large, except to the hinged connections.