• Korean Journal of Materials Research
• /
• v.11 no.8
• /
• pp.641-646
• /
• 2001

The $CoSi_2$ layers have been in-situ grown on undoped poly-Si by the reactive chemical vapor deposition of $Co({\Eta}^5-C_5H_5)(CO)_2$ at $650^{\circ}C$ and their thermal stabilities have been investigated in the temperature range of 800 to $1000^{\circ}C$. The $CoSi_2$ layer grown by the in-situ method had grains with large area of (111) plane, while grains with little area of (111) plane appeared on the $CoSi_2$ layer grown by the conventional two-step method where $CoSi_2$ formed first and transformed to $CoSi_2$. The thermal stability of the $CoSi_2$ layer grown by the in- situ process was improved by more than $100^{\circ}C$ higher than that of the $CoSi_2$ layer grown by the conventional two-step process. The $CoSi_2$ layer grown in situ on a large-grained Poly-Si was stable up to $950^{\circ}C$. The effect of stability improvement by the in situ growth was more pronounced when the grain sizes of the poly-Si substrate were small. The improved thermal stability of the in-situ grown $CoSi_2$ layer could be mainly due to the formation of a uniform $CoSi_2$ layer with the $CoSi_2$ grains, which are in the form of epitaxial-like growth on the each poly-Si grains, causing a reduction of the interfacial energy of the system.

• Korean Journal of Materials Research
• /
• v.11 no.7
• /
• pp.556-561
• /
• 2001

We prepared a new a SOS(silicon-on-silicide) wafer pair which is consisted of Si(100)/1000$\AA$-NiSi Si (100) layers. SOS can be employed in MEMS(micro- electronic-mechanical system) application due to low resistance of the NiSi layer. A thermally evaporated $1000\AA$-thick Ni/Si wafer and a clean Si wafer were pre-mated in the class 100 clean room, then annealed at $300~900^{\circ}C$ for 15hrs to induce silicidation reaction. SOS wafer pairs were investigated by a IR camera to measure bonded area and probed by a SEM(scanning electron microscope) and TEM(transmission electron microscope) to observe cross-sectional view of Si/NiSi. IR camera observation showed that the annealed SOS wafer pairs have over 52% bonded area in all temperature region except silicidation phase transition temperature. By probing cross-sectional view with SEM of magnification of 30,000, we found that $1000\AA$-thick uniform NiSi layer was formed at the center area of bonded wafers without void defects. However we observed debonded area at the edge area of wafers. Through TEM observation, we found that $10-20\AA$ thick amourphous layer formed between Si surface and NiSix near the counter part of SOS. This layer may be an oxide layer and lead to degradation of bonding. At the edge area of wafers, that amorphous layer was formed even to thickness of $1500\AA$ during annealing. Therefore, to increase bonding area of Si NiSi ∥ Si wafer pairs, we may lessen the amorphous layers.

• Journal of Korean Society of Environmental Engineers
• /
• v.29 no.9
• /
• pp.1027-1034
• /
• 2007

This research was focused on the selective separation of $CO_2$ or $CH_4$ from mixture of these gases, by controlling the size of pore or pore gate. Pitch based activated carbon fibers(ACF) were used as adsorbents. The size of pore gate was controlled by the molecule having similar size to that of pore opening. After the adsorption of adsorbate on pore surface, planar molecules such as benzene and naphthalene covered the pore gate. The slow release of adsorbate from the pores covered by planar molecules makes apertures between planar molecules covering pore gate and this structure can be fixed by rapid pyrolysis. The control of pore gate using benzene as covering molecules could not accomplished due to the simultaneous volatilization of benzene and adsorbate$(CO_2)$ caused by similar temperatures of benzene volatilization and adsorbate desorption. Therefore we replaced benzene with naphthalene looking for the stability at a $CO_2$ desorption temperature. The naphthalene molecule was adsorbed on the ACF up to 15% of ACF weight and showed no desorption until $100^{\circ}C$, indicating that the molecule could be used as a good cover molecule. Naphthalene could cover almost all the pore gate, reducing BET surface area from 753 $m^2/g$ to 0.7 $m^2/g$. A mixed gas$(CO_2:CH_4=50:50)$ was adsorbed on the naphthalene treated OG-7A ACF. The amount of $CO_2$ adsorption increased with total pressure, whileas thai of $CH_4$ was not so much influenced on the pressure, indicating that $CO_2$ made more compounds on the ACF surface along with total pressure increase. The most $CO_2$ and the least $CH_4$ were adsorbed in the condition of 0.4 atm, resulting in the highly pure $CH_4$ left in ACF.

• Korean Journal of Optics and Photonics
• /
• v.18 no.5
• /
• pp.351-361
• /
• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
• /
• v.20 no.3
• /
• pp.103-111
• /
• 2014

This study analyzed effects of packaging materials and storage temperature on the shelf-life of Korean grinded yam. For experimental measurement, experimental groups were used $PET(12{\mu}m)/Al(9{\mu}m)/LLDPE(60{\mu}m)$ as opaque barrier packaging material and $PET(12{\mu}m)/PE(20{\mu}m)/VM-PET(12{\mu}m)/PE(25{\mu}m$) and barrier $NY(15{\mu}m)/LLDPE(60{\mu}m$) as transparent barrier packaging material. Control group were used normal $NY(15{\mu}m)/LLDPE(65{\mu}m)$. The grinded yam stored at refrigeration temperature ($5^{\circ}C$) and room temperature ($20^{\circ}C$C) for 8 days. Changes in color, pH, viscosity, microorganisms and sensory characteristics were measured. In the grinded yam L and ${\Delta}E$ value were not changed rapidly at refrigeration temperature. However L and ${\Delta}E$ were rapidly changed in all of packaging materials at room temperature. In two temperature condition, pH and viscosity were decreased during storage but pH was increased at $5^{\circ}C$ after 4 days. PET/Al/LLDPE and PET/PE/VM-PET/PE inhibited the growth of microorganisms effectively. PET/AL/LLDPE which is a high barrier packaging material showed the best in two temperature condition.

• Journal of the Korean Vacuum Society
• /
• v.17 no.1
• /
• pp.34-39
• /
• 2008

We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.

• Journal of the Korean Vacuum Society
• /
• v.5 no.4
• /
• pp.371-376
• /
• 1996

Au films with a thickness around 1600 $\AA$ were deposited onto glass at room temperature by ion beam sputtering with a 5 cm cold-hollow ion gun at pressure $1\times 10^{-6}-1\times 10^{-5}$ Torr. Irradiation of the Au deposited samples was carried out at pressure of $7\times 10^{-6}$ Torr. For the sputter depositions, $Ar^+$ ion energy was 1 keV, and the current density at the substrate surface was 15 $\mu$A/$\textrm{cm}^2$. Effects of 1 keV $Ar^+$ ion dose($I_d$) between $1\times 10^{16}\; and\;2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$on properties such as crystallinity, surface roughness and adhesion, etc. of the films have been investigated. The Au films sputtered by $Ar^+$ ion beam had only (111) plane and the X-ray intensity of the films decreased with increase of $I_d$. The thickness of Au films reduced with Id. $R_{ms}$ surface roughness of the films increased from 16 $\AA$ at as-deposited to 1118 $\AA$ at ion dose= $2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$. Adhesion of Au film on sputtered at $I_d$= $2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$ was 9 times greater than that of Au film with untreated, as determined by a scratch test.

• Solar Energy
• /
• v.10 no.3
• /
• pp.60-65
• /
• 1990

[ $n^+-p^+$ ] InP homojunction solar cells were fabricated by thermal diffusion of sulphur into a $p^+$-InP wafer($p=4{\times}10^{18}cm^{-3}$), and a SiO film($600{\AA}$ thick) was coated on the $n^+$ layer as an antireflection(AR) coating by an e-beam evaporator. The volume of the cells were $5{\times}5{\times}0.3mm^3$. The front contact grids of the cells with 16 finger pattern of which width and space were $20{\mu}m$ and $300{\mu}m$ respectively, were formed by photo-lithography technique. The junction depth of sulphur were as shallow as about 0.4r m We found out the fabricated solar cells that, with increasing the diffusion time, short circuit current densities($J_{sc}$), series resistances($R_s$) and energy conversion efficiencies(${\eta}$) were increased. The cells show good spectral responses in the region of $5,000-9,000{\AA}$. The short circuit current density, the open circuit voltage( $V_{oc}$), the fill factor(F.F) and the energy conversion efficiency of the cell were $13.16mA/cm^2$, 0.38V, 53.74% and 10.1% respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.4
• /
• pp.145-150
• /
• 2014

GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.2
• /
• pp.60-64
• /
• 2011

High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.