Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors

고감도 적외선 이미지 센서 적용을 위한 금속-유전체 복합 박막의 광전자 특성

  • Kim, Ye-Na (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Kwon, Soon-Woo (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Park, Seung-Jun (Department of Materials Science and Engineering, Hanyang University) ;
  • Kim, Woo-Kyug (Korea Electronics Technology Institute) ;
  • Lee, Han-Young (Korea Electronics Technology Institute) ;
  • Yoon, Dae-Ho (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Yang, Woo-Seok (Korea Electronics Technology Institute)
  • Received : 2010.11.08
  • Accepted : 2010.12.24
  • Published : 2011.04.30
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Abstract

High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.

고감도 적외선 이미지 센서에 적용이 가능한 우수한 TCR(temperature coefficient of resistance) 값을 갖고 적외선 파장영역에서 흡수 특성을 갖는 막 형성을 위해, 본 연구에서는 Silica와 Titanium 분말을 혼합비율을 달리하여 준비한 후 열 기상 증착기를 이용하여 상온에서 게르마늄과 유리 기판 위에 각각 $(SiO_2)_x-(Ti)_y$ 막을 제작하였다. 챔버 내에 위치한 혼합분말이 담겨진 텅스텐 보트와 기판 간의 거리는 15.5 cm이며, 사용된 $SiO_2$와 Ti 분말의 혼합비율 x : y는 각각 90 : 10,80 : 20, 70 : 30, 60 : 40이다. $(SiO_2)_x-(Ti)_y$ 막의 전기적 저항은 273~333 K 영역에서 온도 변화에 따라 측정하였으며, TCR 값은 측정된 막의 저항 값으로부터 계산되었다. 다양한 혼합비율 조건 하에서 형성된 $(SiO_2)_x-(Ti)_y$ 막은 수 $k{\Omega}$~수백 의 $k{\Omega}$ 저항특성을 보였으며, 이러한 막의 TCR은 $-1.4{\sim}-2.6%K^{-1}$의 다양한 값을 나타내었다.

Keywords

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