• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.23-29
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• 2013

Development of flexible electronic devices has primarily focused on printing technology using organic materials. However, organic-based flexible electronics have several disadvantages, including low electrical performance and long-term reliability. Therefore, we fabricated nano- and micro-thick silicon film attached to the polymer substrate using transfer printing technology to investigate the feasibility of silicon-based flexible electronic devices with high performance and high flexibility. Flexibility of the fabricated samples was investigated using bending and stretching tests. The failure bending radius of the 200 nm-thick silicon film attached on a PI substrate was 4.5 mm, and the failure stretching strain was 1.8%. The failure bending radius of the micro-thick silicon film attached on a FPCB was 2 mm, and the failure strain was 3.5%, which showed superior flexibility compared with conventional silicon material. Improved flexibility was attributed to a buffering effect of the adhesive between the silicon film and the substrate. The superior flexibility of the thin silicon film demonstrates the possibility for flexible electronic devices with high performance.

• Journal of the Korean Magnetics Society
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• v.24 no.2
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• pp.60-65
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• 2014

We obtained resonance field ($H_{res}$) and linewidth (${\Delta}H_{PP}$) from measured ferromagnetic resonance signal in the functions of polar angle (${\Theta}_H$) in Ni thin film of 240 nm thickness fabricated by electrodeposition method. The angular dependence of $H_{res}$ was well fitted with the calculated ones. We confirmed that the g-factor and effective demagnetization field were 2.18 and 445 emu/cc by the theoretical analysis of the resonance field, respectively. The angular dependence of ${\Delta}H_{PP}$ showed very large values at in-plane direction (${\Theta}_H=90^{\circ}$), which could not explained by the homogenous linewidth due to the Gilbert damping and inhomogeneous linewidth due to the angular variations and magnetization variations by the surface layer. Therefore, we considered the spin wave scattering (two magnon scattering) process in order to analyze the measured inhomogeneous linewidth, which was appeared in thicker film than the critical thickness of 50 nm. The defect medicated spin wave scattering played a key role in the electrodoposited Ni thin film of 240 nm thickness.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Proceedings of the Korea Inteligent Information System Society Conference
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• 2000.11a
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• pp.257-266
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• 2000

산업 및 가정용 기기들이 점차 복잡해짐에 따라 다양한 공학 분야의 해석 기술을 동시에 고려하면서 이들 원리를 적용한 최적의 설계를 결정하는 방법론의 필요성이 대두되고 있다. 다분야통합최적설계 또는 MDO(Multidisciplinary Design Optimization)라 일컫는 새로운 기술은 이러한 필요에 대응하는 기술로서 국내외적으로 활발한 연구가 진행되고 있다. 이러한 MDO 기술을 구현하는 소프트웨어와 하드웨어 복합 체계를 MDO 프레임웍(framework)이라 한다. 일반적으로 프레임웍이란 실제 응용프로그램의 용도에 맞는 주문제작(customization)이 가능한 일종의 전단계 프로그램이라 할 수 있다 MDO 프레임웍은 설계 및 해석 도구들간의 인터페이스를 제공하고, 이들 도구들이 사용하는 설계 데이터를 효율적으로 공유할 수 있도록 지원하여, 설계 작업을 정의, 실행, 관리하는 역할을 한다. 이러한 MDO 프레임웍은 설계 작업을 통합적으로 관리하고 자동화하여 설계 도구간의 데이터 전달과 변환에 소묘되는 설계자의 부담을 경감시키며 다분야 전문가가 참여하는 공통 작업 환경을 제공함으로써 설계 효율성을 증진시킨다. 본 논문에서는 이러한 효용을 달성하기 위한 MDO 프레임웍(framework)을 제시하고 프레임웍 설계의 논리적 근저와 타당성을 밝힌다. 본 논문에서 제안하는 다분야 통합 최적화를 위한 분산형 지능 시스템인 DisMDO는 사용자가 GUI를 동해서 편리하게 다분야통합최적화 문제를 해결할 수 있도록 지원하며, 제공되는 스크립트 언어를 동해서도 이를 정의할 수 있도록 지원하여 일괄처리도 가능하도록 한다. 또한, 집중화된 데이터베이스를 관리하여 다분야 전문가들이 공통의 데이터를 안전하게 공유할 수 있도록 지원하며, 외부에서 제공되는 해석 도구나 최적화 모듈을 손쉽게 프레임웍에 통합시킬 수 있도록 하는 인터페이스 제작기(factory) 기능을 제공한다.ackscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.653-659
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• 2017

In this study, the complex forging process of an outer support ring was developed and the prototype was manufactured. The current process, hot forging and MCT machining, has a disadvantage of excessive material removal rates and longer machining hours. To overcome this disadvantage, a general shape is given through hot forging and the precision is achieved through cold forging. The complex forging process was developed with the minimal machining process. Forging analysis was carried out to design a forging process using the commercial program, Deform-3D. The hot and cold forging processes were set up based on the analyzed result. The mold and prototype were manufactured. Hardness, surface roughness, internal defect, the grain low line of the prototype were evaluated. The results showed no particular problems, and there were no problems in mass production. Using complex forging, the material was reduced by approximately 27 % compared to the process using hot forging and MCT machining. In addition, the production speed was improved 2.15 fold compared to that of hot forging and MCT machining. Through this study, a cost-effective process and mold design technology were established, which is expected to have positive effects on other related automotive parts production.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.288-293
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• 2023

To optimize the process parameters of laser powder bed fusion process to fabricate the high density STS316L alloy, the effect of laser power, scanning speed and hatching distance on the relative density was studied. Tensile properties of additively manufactured STS316L alloy using optimized parameters was also evaluated according to the build direction. As a result of additive manufacturing process under the energy density of 55.6 J/mm³, 83.3 J/mm³ and 111.1 J/mm³, high density STS316L specimens was suitably fabricated when the energy density, power and scan speed were 83.3 J/mm³, 225 W and 1000 mm/s, respectively. The yield strength, ultimate tensile strength, and elongation of STS316L specimens in direction perpendicular to the build direction, show the most competitive values. Anisotropic shape of the pores and the lack of fusion defects probably caused strain localization which result in deterioration of tensile properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.2-24.2
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• 2009

Indium Antimonide(InSb)는 $3{\sim}5\;{\mu}m$대 적외선 감지영역에서 기존 HgCdTe(MCT)를 대체할 물질로 각광받고 있다. 1970년대부터군사적 용도로 미국, 이스라엘 등 일부 선진국에서 연구되기 시작했으며,이온주입, MOCVD, MBE 등 다양한 공정을 통해 제작되어 왔다. InSb 적외선 감지소자는 $3{\sim}5{\mu}m$대에서 HgCdTe와 성능은 대등한데 반해, 기판의 대면적화와 저렴한 가격, 우주공간 및 야전에서 소자 동작의안정성 등으로 InSb적외선 감지기는 냉각형 고성능 적외선 감지영역에서 HgCdTe를 대체해 가고 있다. 하지만 InSb는 77 K에서 0.225eV의 작은 밴드갭을 갖고 있기 때문에 누설전류로 인한 성능저하가 고질적인문제로 대두되었고, 이를 해결하기 위한 고품질 절연막 연구가 InSb적외선 수광 소자 연구의 주요이슈 중 하나가 되어왔다. 그 동안 PECVD, photo-CVD, anodic oxidation 등의 공정을 이용하여 $SiO_2$, $Si_3N_4$, 양극산화막(anodic oxide) 등 다양한 절연막에 대한 연구가 진행되었고[1,2], 절연막과 반도체 사이 계면에서의 열확산을 억제하여 계면트랩밀도를 최소화하기 위한 공정개발이 이루어졌다[3]. 하지만 InSb 적외선 감지기술은 국방 및 우주개발의 핵심기술중 하나로 그 기술의 이전이 엄격히 통제되고 있으며, 현재도 미국과 이스라엘, 일본, 영국 등 일부 선진국 만이 기술을 확보하고 있고, 국내의 경우 연구가 매우 취약한 실정이다. 따라서 본 연구에서는 InSb 적외선 감지기의 암전류를 제어하기 위한 낮은 계면트랩밀도를 갖는 절연막 증착 공정을 찾고자 하였다. 본 연구에서는 n형 (100) InSb 기판 ($n=0.2{\sim}0.85{\times}10^{15}cm^{-3}$ @ 77K)에 PECVD를 이용하여 $SiO_2$, $Si_3N_4$ 등을 증착하고 절연막으로서 이들의 특성을 비교 분석하였다. $SiO_2$는 160, 200, $240^{\circ}C$에서 $Si_3N_4$는 200, $300^{\circ}C$에서 증착하였다. Atomic Force Microscopy(AFM) 사진으로 확인한 결과, 모든 샘플에서표면거칠기가 ~2 nm의 평탄한 박막을 얻을 수 있었다. Capacitance-Voltage 측정(77K)을 통해 절연막 특성을 평가하였다. $SiO_2$와 $Si_3N_4$ 모두에서 온도가 증가할수록 벌크트랩밀도가 감소하는 경향을 볼 수 있었는데, 이는 고온에서 증착할 수록 박막 내의 결함이 감소했음을 의미한다. 반면계면트랩밀도는 온도가 증가함에 따라, 1011 eV-1cm-2 대에서 $10^{12}eV^{-1}cm^{-2}$ 대로 증가하였는데, 이는 고온에서 증착할 수 록 InSb 표면에서의 결함은 증가하였음을의미한다. 암전류에 큰 영향을 주는 것은 계면트랩밀도 이므로, $SiO_2$와 $Si_3N_4$ 모두 $200^{\circ}C$이하의 저온에서 증착시켜야 함을 확인할 수 있었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2298-2304
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• 2011

This paper describes and presents the design of a miniaturized low pass filter (LPF) for microwave frequency region using a common defected ground structure (CDGS). In this study a half-sized LPF is obtained using CDGS, while the previous LPFs with the conventional DGS showed a mild size-reduction. The common DGS (CDGS) is realized on the common ground plane of two microstrip lines, i. e double-sided microstrip lines, which exist back-to-back to each other. In order to show the validity of the proposed design, an example of LPF using CDGS and double-sided microstrip lines is designed, fabricated and measured using the dielectric substrate with the dielectric constant of 2.2 and with the thickness of 31mils. The size of the designed LPF using CDGS is only 52.6% compared to that of the previous LPF with the conventional DGS. In addition, it is shown that the performances of the proposed LPF are well preserved after the size-reduction with the measured S11 and S21 of -22dB, min and -0.19dB, max, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.1
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• pp.61-68
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• 2010

In this work, a reduced size 20W quasi class-E Power Amplifier(PA) with defected ground structure load-network is presented for WCDMA base station application. Harmonic impedances required for the class E operation are satisfied by applying the dumbbell and the asymmetric spiral DGS. Open impedance for 2nd harmonic frequency which has the highest power and nearly short impedances for other higher order harmonics are provided by the proposed DGS load-network. The maximum Power Added Efficiency(PAE) of 70.2 % at the output power of 43.1 dBm with the saturated power gain of 12.7 dB is achieved by the proposed quasi class-E PA, which is comparable to the performance of the reference class-E PA. Total size of the proposed class-E PA is only $50{\times}50\;mm^2$ and much smaller than the conventional class-E PA that is loaded with a number of open stubs.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.593-602
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• 2020

Power cables installed in domestic factories or underground can cause accidents depending on the manufacturing process, installation, and environmental conditions during use. When an accident occurs in a power cable, it can cause enormous economic loss and social confusion. Hence, the importance of preventive management of the cable through diagnosis is increasing to prevent it. Therefore, in this paper, a diagnostic sample cable was produced by simulating a part that could be a problem due to the installation, manufacturing defects, or deterioration of cables that can occur in the field. Dielectric loss Tangent (tan 𝛿; TD), and Partial Discharge(PD) tests were performed. Partial discharge and AC (60Hz) withstand voltage equipment using High-Frequency Current Transformer (HFCT) were applied After applying a VLF (Very Low Frequency) power supply with a frequency of 0.1Hz was applied. As a result, B and C phase defect samples at a 2.0U₀ voltage through the VLF could measure the internal partial discharge in the A-phase normal sample cable from the noise at a 0.5U₀ to 2.0U₀ voltage. In addition, the 1.5U₀ voltage was measured through the AC (60Hz) withstand voltage equipment of the commercial frequency to verify its effectiveness. Partial discharge in the run-off state was measured at a voltage of 1.0U₀, and there was a risk when installing the equipment. AC power equipment showed a difficulty of movement by volume or weight. The diagnostic method, through the VLF of the quadrant state, revealed its safety and effectiveness.