• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.1
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• pp.72-78
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• 2016

In terms of power components which use environmentally-friendly dry air that can substitute SF6, there have been studies on the electrical properties of the solid insulation "spacer" for the purpose of securing dielectric strength as they become smaller. This study laminated solid insulation to keep the creeping distance the same in the dry air and investigated vertical surface discharge characteristics by shape. The three sheets of disk-type solid insulation(Bakelite) were laminated in a manner to keep the creeping distance the same. The lamination was categorized as follows: "Type A" in which the insulations with the same disk diameter were laminated; "Type B" in which the insulations whose middle disk diameter was large were laminated; and "Type C" in which the ones whose middle disk diameter was small were laminated. For a vertical surface discharge experiment, dry air was injected into the test chamber depending on the shape of the laminated solid insulation, and chamber pressure was adjusted in a range of 0.1-0.6MPa. As volume decreased, surface discharging voltage by unit volume increased. This was because of dielectric polarization according to the structural characteristics of the shape of lamination. The highest surface discharging voltage was found in "Type C."

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.5
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• pp.423-431
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• 2001

This paper proposes a new active common-mode voltage damper circuit that is capable of suppressing a common-mode voltage produced in the PWM VSI-fed induction motor drives. The new active common mode voltage damper is consists of a four-level half-bridge Inverter and a common mode transformer with a blocking capacitor. In order to reduce the common mode voltage and high frequency leakage current the active common mode damper applies to the PWM inverter system the compensated voltage of which the amplitude is the same as the common mode voltage and of which the polarity is opposite to the common mode voltage. Simulated using P-SPICE and experimental results show that common-mode voltage damper makes contributions to reducing a high frequency leakage current and common-mode voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.376-376
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• 2007

In Liquid Crystal Display (LCD) manufacturing, the organic over coat materials over coat materials for insulation layer of color filter with acryl ate was widely used. Therefore, we approach that the organic overcoat material can use to insulation layer for color filter and liquid crystal (LC) alignment layer in this research. The LC aligning capabilities was successful stuided for the first time. The organic overcoat layer and polymer layer was coated by spin-coating. In order to characterize the LC alignment, electric optic and residual DC and atomic force microscopy (AFM) image was used. The good LCD aligning capabilities treated on the organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. Also the good LCD alignment capabilities treated polymer on surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1800 eV can be achieved. Comparing electro-optical characteristics between the Polyimide (PI) and the overcoat, the resultant transmittance of the overcoat considerably matched that of the PI and the residual DC also exhibited similar features with the PI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.490-494
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• 2020

Sulphur hexafluoride (SF₆) is mostly used as a current-insulating medium in gas-insulated switchgears (GIS), owing to its excellent dielectric strength and arc-extinguishing performance. The global warming potential (GWP) of SF₆, however, is 23,900 times that of CO₂, and its life time in the atmosphere is 3,200 years. For these reasons, new eco-friendly gases to replace SF₆ are required. In this study, the partial discharge (PD) characteristics of green gas for grid (g³) and dry air (N₂/O₂) were analyzed to compare with those of SF₆. A PD electrode system was designed to simulate the protrusion defect in GISs and fabricated for experimentation. To compare the PD characteristics of each gas, the discharge inception voltage (DIV), discharge extinction voltage (DEV), discharge magnitude, discharge pulse number, and phase pattern were analyzed. Results from this study are expected to provide fundamental materials for the design of eco-friendly GISs.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.10
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• pp.1523-1527
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• 2015

Traction power is supplied by three-phase alternating current of 154 kV power grid and electric trains are operated on single phase feeding system. It becomes important to use all the three phases equally and convert them into two-phase electric power (90 degree phase rotation) for traction supply. This is achieved by special transformer from the adjacent traction substation which is separated by a neutral section. Neutral section locations are in front of the substation and between the two substations. The first stage of the Seoul-Busan high-speed railway, design curve radius is larger than 7,000 m and the greatest slope is 25‰. The railway track conditions are evaluated as good enough to install a neutral section at the first stage, but a few factors of coasting operation of the train should be considered at the second stage of Seoul-Busan high-speed railway. The neutral section was located at Kim-cheon substation, which made some neutral section problems produced by the operating train, and the neutral section was moved about 1.5 km to the south toward Dong Dae-gu station due to the track operation condition. Some of the trains which stopped at the existing Kim-cheon Gu-mi station produced another motor block failure after moving the neutral section. In this paper, power quality, system performance and track condition, etc. are suggested to solve the problems.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1313-1314
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• 2007

This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.649-650
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• 2005

반도체는 고집적화, 고속도화, 저전력화를 목적으로 발전하고 있다. 이를 위하여 design rule의 감소, 새로운 물질과 프로세스의 적용 등 많은 연구가 이루어지고 있으며, RC delay time을 줄이기 위한 Cu 와 저유전율 재료의 적용이 그 대표적인 예라 할 수 있다. Cu 배선은 기존의 Al 배선에 비하여 높은 전자이동 (electro-migration)과 응력 이동 (stress-migration) 저항을 가짐으로써 전기적인 성능 (electrical performance) 에서 이점을 가지고 있다. 반도체에서의 Cu 배선 구조는 평탄화된 표면 및 배선들 사이에서의 좋은 전기적인 절연성을 가져야 하며, 이는 디싱(dishing)과 에로젼(erosion)의 중요한 인자가 된다. 기존의 평탄화 공정인 Cu CMP(Chemical Mechanical Polishing)에 있어서 이러한 디싱, 에로전과 같은 결함은 선결되어져야 할 문제로 인식되고 있다. 따라서 본 연구에서는 이러한 결합들을 감소시키기 위한 새로운 평탄화 방법으로 Cu gap-filling 을 하는 동시에 평탄화된 표면을 이루는 ECMD(Electro-Chemical Mechanical Deposition) 공정의 전기적 기계적 특성을 파악하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.381-387
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• 2007

The excellent dielectric properties of $SF_6$(sulfur hexafluoride) have lead to its wide range of application in the field of high voltage insulation. Because there has been some recent concern regarding the environmental impacts of $SF_6$ binary gas mixtures, with $SF_6$ as the main component, have been the subject of active research. Scientists have long been interested in the possible use of gaseous fluorocarbons, including $CF_4$ (Carton Tetrafluoride), in high voltage applications due to their inert character and high dielectric strength. This paper presents experimental results concerning the AC breakdown characteristics lot various mixtures of $SF_6/CF_4$ in a test chamber and 25.8 kV GIS (Gas Insulation Switchgear) at practical pressures (0.1-04 MPa) and gap lengths (0.5 mm, 1 mm) in a test chamber. In the result, it was observed that an increase in the dielectric strength is attained through the addition of $SF_6$ to $CF_4$. It is possible to make an environment friendly gas insulation material while maintaining the dielectric strength by combing $SF_6$ and $CF_4$ which generates a lower level of the "global warming" effect.

• Journal of radiological science and technology
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• v.27 no.2
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• pp.45-50
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• 2004

Synthesis diamond films have been deposited on the molybdenum substrates using an microwave plasma enhanced chemical vapor deposition method. The effects of deposition time, surface morphology, infrared transmittance and Raman scattering have been studied. Diamond deposited on molybdenum substrate for 100 hours by MW plasma CVD from $CH_4-H_2-O_2$ gas mixture had good crystallity with $100[{\mu}m]$ thickness needed for radiation detector. Diamond radiation detector of M-I-M type was made and the current of radiation detector was increased by increasing X-ray dose.