• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.10
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• pp.69-75
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• 2008

This paper presents an algorithm robust to error for estimating partial discharge (PD) location using acoustic emission sensors. In operating transformers, the velocity computing of the acoustic signal is difficult because the temperature of the Insulation oil is not homogeneous. So, some error occurs in the process. Therefore, the algorithm estimating PD location must consider this error to provide maintenance person with useful information. The conventional algorithm shows the PD position as a point, while the new algorithm using LookUp-Table(LUT) shows PD position as error-map visually. The error-map is more useful than the conventional result because of robustness to error. Also, we compared performance of them, by adding error to data on purpose.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.10
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• pp.84-88
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• 2008

This paper deals with the part of the surge protection method of the underground distribution system in Korea using arrestors by simulating with ATP-EMTP(Electro-Magnetic Transient Program) based on the "A Study on the Surge Propagation Property of Underground Distribution Cables by Field Tests" which was published in 2007. Although domestic underground distribution system is protected by arrester which installed at a riser pole, we need to additional protection method because lightning surge can be doubled and affect underground distribution facilities when it is injected into the mixed distribution line of overhead and underground through a riser pole. In this paper, it is proposed that scout method that arresters are attached to the sides of a riser pole is better than developing of a elbow arrester on a viewpoint of economics and maintenance, because of the situation of the domestic underground distribution system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.10
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• pp.118-125
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• 2008

The outages of transmission lines give big damages to the industrial world Lightning outages occupy above 50[%] among the outages of transmission lines. To decrease the lightning outage rates, it is necessary to try countermeasures considering economical points. For the lightning protection of power transmission lines, it is very important to accurately predict the lightning outage rate because the reliability criterion for transmission line is normally specified as the number of flashovers per 100[km] per year. The phenomenon of an insulator flashover by a lightning stroke is a very complex electromagnetic event. And to calculate the lightning outage rates of transmission lines, so many calculation should be repeated because there are many overhead lines and power lines. Therefore it is necessary to develope a program for it. In this paper, we briefly introduce the basic concept for lightning outage calculation algorithm and the program.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.8
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• pp.67-74
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• 2008

In this paper we describe discharge characteristics between needle-to-plane electrodes in water in various conditions such as different impulse voltages, polarities and water resistivities. Streamer corona is initiated at the tip of needle electrode and propagates toward plane electrode, and it experiences the final jump across the test gap. The branched channels of streamer coronas for lower water resistivities are much thicker and brighter than those for higher water resistivities at the same level of applied voltage. The negative streamer coronas not only have more branches but also widely spread out compared to the positive streamer coronas. A number of pulse-like currents ranging from some hundreds mA to a few A after streamer corona onset were produced with discharge developments. The time-lags-to breakdown for the positive polarity were remarkably shorter than those for the negative polarity. The pre-breakdown energy supplied into the test gap was inversely proportional to water resistivity.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.6-10
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• 2006

To improve mean-life and reliability of power cable, we have investigated specific heat (Cp) and thermal conductivity of XLPE insulator and semiconducting materials in 154(kV) underground power transmission cable. Specimens were respectively made of sheet form with EVA, EEA and EBA added $30[wt\%],$ carbon black, and the other was made of sheet form by cutting XLPE insulator in 154(kV) power cable. Specific heat (Cp) and thermal conductivity were measured by DSC (Differential Scanning Calorimetry) and Nano Flash Diffusivity. Specific-heat measurement temperature ranges of XLPE insulator were from $20[^{\circ}C]\;to\;90[^{\circ}C],$ and the heating rate was $1[^{\circ}C/mon].$ And the measurement temperatures of thermal conductivity were $25[^{\circ}C],\;55[^{\circ}C]\;and\;90[^{\circ}C].$ In case of semiconducting materials, the measurement temperature ranges of specific heat were from $20[^{\circ}C]\;to\;60[^{\circ}C],$ and the heating rate was $1[^{\circ}C/mon].$ And the measurement temperatures of thermal conductivity were $25[^{\circ}C],\;55[^{\circ}C].$ In addition we measured matrix of semiconducting materials to show formation and growth of carbon black in base resins through the SEM. From these experimental results, both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.6
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• pp.504-511
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• 2003

In this paper, inverter type neon power supply using a piezoelectric transformer is fabricated and its characteristic is investigated. Developed neon power supply is composed of basic circuit and blocks, such as rectifier part, frequency oscillation part and piezoelectric transformer and resonant half bridge inverters. In this paper for complement the low power limitation, piezoelectric transformer at parallel connected driving by inverter is studied for noon tubes system of high power. When piezoelectric transformer is connected with parallel, LC filter connection method with parallel and selection of inductance L and capacitor C of primary side is suggested for reduce unbalanced current at the terminal of each transformer. Piezoelectric transformers use piezoelectric ceramic devices. Thus it is wireless therefore it has high power density, high Isolation level, low loss, more light, and miniaturization. In addition, high voltage transfer ratio is expected because there is no leakage inductance. Also, it has economic merit that the electrical loss Is low because structure is simple, small and tighter weight.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.3
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• pp.293-301
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• 2011

This paper proposes a bridgeless half-bridge AC-DC converter with high-efficiency. The proposed converter integrates the bridgeless power factor correction (PFC) circuit with the asymmetrical pulse-width modulated (APWM) half-bridge DC-DC converter. It provides the isolated DC output voltage from the AC line voltage without using any full-bridge diode rectifier. Conduction losses are lowered with a simple circuit structure. Switching losses are also reduced by achieving zero-voltage switching (ZVS) of the power switches. By using series-connected two transformers, the proposed converter provides a low-profile and high power density for AC-DC converters. The performance of the proposed converter is verified from a 250 W (48 V / 5.2 A) experimental prototype circuit at $90 \;V_{rms}$ line voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.1
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• pp.72-78
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• 2016

In terms of power components which use environmentally-friendly dry air that can substitute SF6, there have been studies on the electrical properties of the solid insulation "spacer" for the purpose of securing dielectric strength as they become smaller. This study laminated solid insulation to keep the creeping distance the same in the dry air and investigated vertical surface discharge characteristics by shape. The three sheets of disk-type solid insulation(Bakelite) were laminated in a manner to keep the creeping distance the same. The lamination was categorized as follows: "Type A" in which the insulations with the same disk diameter were laminated; "Type B" in which the insulations whose middle disk diameter was large were laminated; and "Type C" in which the ones whose middle disk diameter was small were laminated. For a vertical surface discharge experiment, dry air was injected into the test chamber depending on the shape of the laminated solid insulation, and chamber pressure was adjusted in a range of 0.1-0.6MPa. As volume decreased, surface discharging voltage by unit volume increased. This was because of dielectric polarization according to the structural characteristics of the shape of lamination. The highest surface discharging voltage was found in "Type C."