• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.386-389
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• 2009

The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.791-795
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• 2016

The effects of $TiO_2$ addition on the electrical insulation of AlN ceramics with 1 wt% $Y_2O_3$ as a sintering aid have been investigated. Some of $TiO_2$ has reacted with AlN powders and transformed to fine TiN particles during sintering, which was uniformly dispersed along grain boundaries of AlN. At a high electrical field (500 V/mm), the resistivity of AlN ceramics with $TiO_2$ addition of 0.2 wt% increased about 1000 times from $3{\times}10^{10}{\Omega}cm$ to $3.1{\times}10^{13}{\Omega}cm$. Based on the impedance spectroscopy measurement, it was found that $TiO_2$ addition increased dramatically electrical resistivity of AlN grains much more than that of grain boundaries. Thus, $TiO_2$ was believed to dissolve inside AlN grains to suppress ionic conduction of Al vacancies. This suppressed ionic conduction by Ti incorporation into AlN grains seems to contribute to more electrically insulating AlN ceramics.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.213-221
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• 2002

In order to improve the reliability of XLPE cables, it is necessary to find the useful diagnostic parameter according to long term aging. This paper described the change of partial discharge(PD) phase Properties of XLPE cable insulation with branch type electrical tree degradation. for long term aging. To understand the PD Properties with $\phi$ -q-n distributed shape of XLPE insulation, specimens were prepared by 22.9㎸ distribution cable and made in a type of block(16${\times}$16${\times}$3[mm]). Ogura needles having tip radius of l0${\mu}{\textrm}{m}$ were inserted into each block pieces. The measuring system was consisted of PD detector, digitizer for digital conversion, VXI system for signal processing. The PD properties of the specimens were measured from initiation of tree to breakdown and their characteristics were analyzed. We analyzed the relationship between electrical properties(PD Quantity, PD initiation angle, PD extinction angle, PD occurrence angle : (PD extinction angle - PD initiation angle)) and the normalized aging rate. We found PD parameter, PD initiation angle and occurrence angle, which are a useful diagnostic parameter in estimating the branch type electrical tree for XLPE insulation condition.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권4호
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권10호
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• pp.492-499
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• 2002

This paper presents the method for an estimation of discharge current waveform in short gap discharge by radiated electromagnetic fields. The method of current waveform estimation is to use the one antenna method (single field method) with a measured electric or magnetic field at given field point by a time domain antenna. In order to verify the availability of the estimation theory, the discharge current waveform estimation was performed by one antenna methods using the measured electric fields of Wilson & Ma and compared with experiments. In addition diagnosis technique for power equipments is able to prevent from large accidents by finding signs of tile accidents before they happen. From the results of the estimation of discharge current, we have a possibility for the application of insulation diagnosis technique for power equipments using S$F_6$ gas. From this point of view, this paper simulated discharge progress and partial discharge by using needle-plan electrodes system in S$F_6$, studied the distribution of frequency spectrum of the radiated electromagnetic waves using a biconical antenna and a spectrum analyzer. From the experimental results of this study, according to the consideration of the mutual relation between frequency spectrum of the radiated electromagnetic waves and discharge progress, it was confirmed that detecting Partial discharge and estimating discharge progress in S$F_6$ could be Possible.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.373-379
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• 2002

We investigated the evolution of magnetoresistance and magnetic property of tunneling magnetoresistive(TMR) device with microstructure and plasma oxidation time. TMR devices have potential applications for non volatile MRAM and high density HDD reading head. We prepared the tunnel magnetoresistance(TMR) devices of Ta($50{\AA}$)/NiFe($50{\AA}$)/IrMn($150{\AA}$)/CoFe($50{\AA}$)/Al($13{\AA}$)-O/CoFe($40{\AA}$)/FiFe($400{\AA}$)/Ta(($50{\AA}$) structure which have $100{\times}100\mu\textrm{m}^2$ junction area on $2.5{\times}2.5\textrm{cm}^2$ Si/$SiO_2$(($1000{\AA}$) substrates by an inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using an ICP plasma oxidation method by with various oxidation time from 30 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We found that the oxidized sample for oxidation time of 80 sec showed the highest MR radio of 30.31 %, while the calculated value regarding inhomogeneous current effect indicated 25.18 %. We used transmission electron microscope(TEM) to investigate microstructural evolution of insulating layer. Comparing the cross-sectional TEM images at oxidation time of 150 sec and 360 sec, we found that the thickness and thickness variation of 360 sec-oxidized insulating layer became 30% and 40% larger than those of 150 sec-oxidized layer, repectively. Therefore, our results imply that increase of thickness variation with oxidation time may be one of the major treasons of the MR decrease.

• 조명전기설비학회논문지
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• 제13권4호
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• pp.152-159
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• 1999

본 논문에서는 교류전압 인가시 모의 GIS내에 존재하는 금속이물의 거동현상에 대해 연구하였다. 평행평판 전극을 내장한 가스챔버를 설계·제작하고, 전국내 선형 및 구형의 금속이물에 대해 부상전압을 계산 및 측정하였다. 또한 각각의 금속이물에 대전되는 전하량을 계산하였다. 고속카메라를 이용하여 금속이물의 종류 및 인가전압에 따른 거동양상과 부상시간, 부상높이 등의 거동특성을 분석하였다. 전계인가시 금속이물의 대전 전하량은 금속이물의 크기에 따라 증가하며, 부상전압은 서형 및 구형 금속이물의 직경에 큰 양형을 받는 것으로 나타났다. 금속이물의 부상이후 부상전압 부근의 전압에서의 선형 금속이물은 후 전극과 거의 수직인 상태로 상하 왕복운동을 하며, 거의 수직상태로 움직이는 거동 형태를 나타내었다. 절연파괴전압에 가까운 전압에서는 금속이물은 부상 중에 수회 수직회전을 반복하며, 장시간 부유하였다.

• 조명전기설비학회논문지
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• 제13권4호
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• pp.38-46
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• 1999

본 연구는 고전압 전력기기에서 코로나에 의한 절연열화를 진단하기 위해 초음파 측정법을 사용하여 코로나의 진전상태에 따른 초음파신호를 분석하였으며, 또한 방전전하량과 초음파 펄스수의 관계를 조사하였다. 실험결과, 교류전압 인가시 코로나가 성장하여 브러시 또는 스트리머 코로나 형태에서 초음파신호는 처음으로 관측되었으며, 이때 관측된 초음파신호는 정극성 최대치에서 검출할 수 있었다. 전압이 상승함에 따라 정극성이 부극성에 비해 초음파의 발생빈도는 높게 나타났으며, 초음파신호의 크기는 전류펄스의 크기에 비례하였다. 그리고 초음파 펄스수는 방전전하량에 비례하여 증가된 것으로 나타났다. 옥외 전력기기에 대한 초음파 측정시 기본데이터를 얻기 위해 초음파의 발진 및 수신장치를 이용하여 공중초음파의 감쇄, 시간지연 및 지향특성도 조사하였다.

• 조명전기설비학회논문지
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• 제13권1호
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• pp.53-59
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• 1999

$(Ba_{0.85}Ca_(0.15)TiO_3+ZnO$ 세라믹 커패시터는 ZnO를 0.1~0.4몰로 변화시켜 시편을 제조하였다. 본 연구에서는 고전압용 세라믹 커패시터의 구조적 및 전기적 특성에 관하여 연구하였다. 세라믹 커패시터의 상대밀도는 모든시료에서 높았다. 입자의 크기는 $1.0~1.22[\mum]$ 정도의 작은 크기이었으며 ZnO의 첨가량이 0.3몰일 때 가장 크게 성장하였다. 입자의 크기가 클 때 시정수는 증가하였다. 세라믹 커패시터의 온도계수는 0.12~10[kHz]에서 100[ppm]이하로 온도변화에 대해 유전율이 안정하였다. 유전 완화시간은 $[110^{\circ}C]$이상에서 계면분극의 영향으로 감소하였으며 $110[^{\circ}C]$이하에서는 상유전층의 공간전하 분극에 의해서 유전 완화시간이 증가하였다. 유전특성에 영향을 주는 절연층의 두께가 ZnO에 의해서 증가하였으며 유전율의 변화는 0.1[%]로 전압의 변동에 대해 유전율이 안정하였다.

• 조명전기설비학회논문지
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• 제17권3호
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• pp.80-86
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• 2003

본 논문에서는 육상의 지중전력케이블에 비해 유지보수가 힘들고 사고의 파급효과나 사고복구에 큰 어려움이 따르는 해저케이블을 대상으로 진단시험 및 유지보수에 대한 연구를 수행하였다. 본 연구의 목적은 사고위험이 높은 해저선로에 대한 경제적이고 효율적인 열화진단 및 유지보수에 있다. 진단시험 결과, 해저케이블의 열화정도는 매우 심각하며 열화가 계속 진전되고 있음을 확인하였다. 단말부 교체시공 후 재 진단시험을 실시한 결과, 전체적인 열화상태가 개선되었음을 확인하였으며 단말부 및 케이블 절연부에 대한 전기적 특성시험과 화학구조분석 시험 결과, 전체 케이블 시스템의 열화는 주로 단말부 열화에 기인함을 알았다. 상기 결과에 따라 본 연구에 사용된 진단기법 및 유지보수 절차가 해저케이블시스템의 경제적인 관리에 매우 효과적임을 학인하였다.