• Title/Summary/Keyword: 전자파 차단

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UWB Antenna with Triple Band-Notched Characteristics Using the Spiral Resonator and the CSRR (스파이럴 공진기와 CSRR을 이용한 삼중 대역 저지 특성을 갖는 UWB 안테나)

  • Kim, Jang-Yeol;Lee, Seung-Woo;Kim, Nam;Lee, Sang-Min;Oh, Byoung-Cheol
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.11
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    • pp.1078-1091
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    • 2011
  • In this paper, a triple band-notched UWB antennas using a spiral resonator and a complementary split ring resonator is proposed as two types. The band-rejection characteristic of the designed antenna is analyzed through the structure and equivalent circuit model of spiral resonator and CSRR. The measured results of first type antenna show that a VSWR less than 2 was satisfied with a resonant frequency in the range of 1.16~12 GHz and it can be obtained the band-stop performance at 3.3~3.85 GHz, 5.15~6.1 GHz, and 8.025~8.5 GHz. The measured results of second type antenna show that a VSWR less than 2 was satisfied with this antenna works from 1.79 to 12 GHz and it can be achieved the band-notched performance at 3.3~3.88 GHz, 5.12~5.94 GHz, and 8.025~8.51 GHz. Through the measured results, the designed antenna was satisfied UWB band except for triple notched bands.

Design of 2nd-harmonic Quadrature Mixer for Ultra Wideband(UWB) Systems (2차 고조파를 이용한 UWB 시스템용 쿼드러쳐 혼합기 설계)

  • Jung, Goo-Young;Lim, Jong-Hyuk;Choi, Byung-Hyun;Yun, Tae-Yeoul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.12 s.115
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    • pp.1156-1163
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    • 2006
  • This paper presents an ultra wideband(UWB) direct conversion mixer for IEEE 802.15.3a applications with simulation and measurement results. Since the direct conversion mixing causes dc-offset and even-order distortion, the proposed mixer adopts an anti-parallel diode pairs(APDPs) to solve these problems. The proposed mixer consists of an in-phase wilkinson power divider over $3.1{\sim}4.8GHz$, a wideband $45^{\circ}$ power divider over $1.5{\sim}2.4GHz$, and miniatured band pass filters(BPFs) for RF-LO isolations. The conversion loss is optimized with impedance matchings between APDPs and wideband components. The measured mixer shows the conversion loss of 13.5 dB, input third-order intercept-point($IIP_3$) of 7 dBm, and 1-dB gam compression point($P_{1dB}$) of -4 dBm. Quadrature(I/Q) outputs have the magnitude difference of about 1 dB and phase difference of ${\pm}3^{\circ}$.

A Design of High Efficiency Distributed Amplifier Using Optimum Transmission Line (최적 전송 선로를 이용한 고효율 분산형 증폭기의 설계)

  • Choi, Heung-Jae;Ryu, Nam-Sik;Jeong, Young-Chae;Kim, Chul-Dong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.1
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    • pp.15-22
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    • 2008
  • In this paper, we propose a numerical analysis on reversed current of distributed amplifier based on transmission line theory and proposed a theory to obtain optimum transmission line length to minimize the reversed currents by cancelling those components. The reversed current is analyzed as being simply absorbed into the terminal resistance in the conventional analysis. In the proposed analysis, however, they are designed to be cancelled by each other with opposite phase by the optimal length of the transmission lint Circuit simulation and implementation using pHEMT transistor were performed to validate the proposed theory with the cutoff frequency of 3.6 GHz. From the measurement, maximum gain of 14.5dB and minimum gain of 12.3dB were achieved In the operation band. Moreover, measured efficiency of the proposed distributed amplifier is 25.6% at 3 GHz, which is 7.6%, higher than the conventional distributed amplifier. Measured output power Is about 10.9dBm, achieving 1.7dB higher output power than the conventional one. Those improvement is thought to be based on the cancellation of refersed current.

The Design of a X-Band Frequency Synthesizer using the Subharmonic Injection Locking Method (Subharmonic Injection Locking 방법을 이용한 X-Band 주파수 합성기 설계)

  • 김지혜;윤상원
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.2
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    • pp.152-158
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    • 2004
  • A low phase noise frequency synthesizer at X-Band which employs the subharmonic injection locking was designed and tested. The designed frequency synthesizer consists of a 1.75 GHz master oscillator - which also operates as a harmonic generator - and a 10.5 GHz slave oscillator. A 1.75 GHz master oscillator based on PLL technique used two transistors - one constitutes the active part of VCO and the other operates as a buffer amplifier as well as harmonic generator. The first stage operates a fixed locked oscillator and using the BJT transistor whose cutoff frequency is 45 GHz, the second stage is designed, operating as a harmonic generator. The 6th harmonic which is produced from the harmonic generator is injected into the following slave oscillator which also behaves as an amplifier having about 45 dB gain. The realized frequency synthesizer has a 7.4 V/49 mA, -0.5 V/4 mA of the low DC power consumption, 4.53 dBm of output power, and a phase noise of -95.09 dBc/Hz and -108.90 dBc/Hz at the 10 kHz and 100 kHz offset frequency, respectively.

Design and Implementation of Monopole Antenna with Parasitic Element of Spiral Shape and L-Resonator (스파이럴 구조 기생 소자와 L자형 공진기를 갖는 모노폴 안테나 설계 및 구현)

  • Yoon, Kwang-Yeol;Lee, Seungwoo;Kim, Jang-Yeol;Rhee, Seung-Yeop;Kim, Nam
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.1
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    • pp.11-19
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    • 2013
  • In this paper, we designed and implemented the planar monopole antenna using the coupling effect for the multi-band characteristic. A parasitic element for the multi-band characteristic based on a rectangular patch with single resonance is inserted. Spiral shaped parasitic element is used for minimizing the antenna size and obtaining the multi-resonance characteristic. The frequency characteristics are modified and optimized by varying specific parameters. By inserting an L-shaped resonator at both sides of the feed line which connected through the via hole to the ground plane, unnecessary frequency bands are eliminated. Proposed antenna dimension is $40{\times}60{\times}1mm^3$. It is fabricated on the FR-4 substrate(${\varepsilon}_r$=4.4) using a microstrip line of $50{\Omega}$ for impedance matching. By measurement results, the characteristic of the return loss under -10 dB are 1.714~2.496 GHz, 2.977~4.301 GHz, and 4.721~6.315 GHz, and the radiation patterns have omni-directional shapes.

Impact of Group Delay in RF BPF on Impulse Radio Systems (임펄스 라디오 시스템에서 RF 대역 통과 필터의 군지연 영향 분석)

  • Myoung Seong-Sik;Kwon Bong-Su;Kim Young-Hwan;Yook Jong-Gwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.4 s.95
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    • pp.380-388
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    • 2005
  • This paper presents analysis results of the effects of RF filter characteristics on the system performance of impulse radio. The impulse radio system transmits modulated pulses having very short time duration and information can be extracted in receiver side based on cross-correlation between received and transmitted pulses. Accordingly, the pulse distortion due to in-band group delay variation can cause serious system performance degradation. In general, RF bandpass filters inevitably cause group delay difference to the signal passing through the filter which is proportional to its skirt characteristic due to its resonance phenomenon. For time as well as frequency domain analysis, small signal scattering parameter $S_{21}$ and its Fourier transform are used to characterize output pulse waveform under the condition that the input and output ports are matched. The output pulse waveform of the filter is predicted based on convolution integral between input pulse and filter transfer function, and resulting BER performances in the BPM and PPM based impulse radio system are calculated.

Improved Power Performances of the Size-Reduced Amplifiers using Defected Ground Structure (결함 접지 구조를 이용하여 소형화한 증폭기의 개선된 전력 성능)

  • Lim, Jong-Sik;Jeong, Yong-Chae;Han, Jae-Hee;Lee, Young-Taek;Park, Jun-Seok;Ahn, Dal;Nam, Sang-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.8
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    • pp.754-763
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    • 2002
  • This paper discusses the improved power performances of the size-reduced amplifier using defected ground structure (DGS). The slow-wave effect and enlarged electrical length occur due to the additional equivalent circuit elements of DGS. Using these properties, it is possible to reduce the length of transmission lines in order to keep the same original electrical lengths by inserting DGS on the ground plane. The matching and performances of the amplifier are preserved even after DGS patterns have been inserted. While there is no loss in the size-reduced transmission lines at the operating frequency, but there exists loss to some extent at harmonic frequencies. This leads to the more excellent inherent capability of harmonic rejection of the size-reduced amplifier. Therefore, it is expected tile harmonics of the size-reduced amplifier are smaller than those of the original amplifier. The measured second harmonic, third order intermodulation distortion (IMD3), and adjacent channel power ratio (ACPR) of the size-reduced amplifier are smaller than those of the original amplifier by 5 dB, 2~6 dB, and 1~4 dB, respectively, as expectation.

Study on Characteristics of the Forward Link Signal for the UHF RFID Reader (UHF 대역 RFID 리더의 순방향 링크 신호 특성에 관한 연구)

  • Kim, Do-Yun;Jang, Byung-Jun;Yoon, Hyun-Goo;Park, Jun-Seok;Yook, Jong-Gwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.6 s.121
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    • pp.602-611
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    • 2007
  • In this paper, the forward link of UHF RFID system is modeled in accordance with the EPCglobal class 1 generation 2(EPCglobal C1G2) UHF Radio-Frequency Identity protocol specification at $860{\sim}960MHz$. Based on the constructed model, characteristics on the forward link signal for the EPCglobal C1G2 RFID reader are simulated with the help of a MATLAB softwarein order to extract the design parameters of a transmit digital filter which meets the Korean RFID regulations. Herein, the forward link model is consisted of PIE source coding, transmit digital filter, modulation, local oscillator, and antenna. From the simulation results, the ranges of three design parameters(roll-off factor, cutoff frequency, the number of tabs) for transmit digital filter are obtained with different modulation techniques and the Tari(type a reference interval) values. Finally, DSB/SSB-ASK modulation technique can not satisfy the EPCglobal C1G2 specification when Tari equals to $6.25{\mu}sec$ in a multiple-reader environment. Consequently this paper can provide a guideline for design parameters of a RFID reader as well as the basic scheme of analyzing frequency interference problems in RFID environments, including multiple-reader and dense-reader environments.

X, K-Band Patch Array Antenna Having One Port Feeding for Radar Detector (단일 급전부를 갖는 레이다 디텍터용 X, K 밴드 배열 안테나)

  • Joo, Hyun-Mo;Park, Byung-Chul;Kay, Young-Chul;Lee, Jeong-Hae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.5
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    • pp.559-569
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    • 2012
  • In this paper, the X($1{\times}2$, 10.525 GHz) and K($3{\times}6$, 24.15 GHz) bands patch array antenna having single feed line for radar detector applications is proposed. The left side of the proposed array antenna is X band array antenna and the right is K band array antenna. Two array antennas with two stubs located in the front of antennas are fed through one transmission line. If the array antennas which have the different resonance frequency are fed by one transmission line using general T-junction, it interferes each other and the array antenna lost its character. Therefore, to prevent these interferences, two stubs using open and short property of stub are designed. First of all, the performances of array antenna weren't changed when each array antennas were connected with the stub and in the end, it is found out that it was the same when the two array antennas were combined and feed through the one transmission line. The measured gain at X band is 6.47 dBi and measured gain at K band is 13.07 dBi. The experimental results agree well with the simulated ones.

DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess (2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성)

  • Yoon, Hyung Sup;Min, Byoung-Gue;Chang, Sung-Jae;Jung, Hyun-Wook;Lee, Jong Min;Kim, Seong-Il;Chang, Woo-Jin;Kang, Dong Min;Lim, Jong Won;Kim, Wansik;Jung, Jooyong;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.4
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    • pp.282-285
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    • 2019
  • A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current($I_{dss}$), an extrinsic transconductance($g_m$) of 1,090 mS/mm and a threshold voltage($V_{th}$) of -0.65 V. The $f_T$ and $f_{max}$ obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).