The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess

2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성

  • Yoon, Hyung Sup (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Min, Byoung-Gue (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Chang, Sung-Jae (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Jung, Hyun-Wook (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Lee, Jong Min (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kim, Seong-Il (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Chang, Woo-Jin (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kang, Dong Min (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Lim, Jong Won (RF/Power Components Research Group, ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kim, Wansik (LIG Nex1 Co., Ltd.) ;
  • Jung, Jooyong (LIG Nex1 Co., Ltd.) ;
  • Kim, Jongpil (LIG Nex1 Co., Ltd.) ;
  • Seo, Mihui (Agency for Defense Development) ;
  • Kim, Sosu (Agency for Defense Development)
  • 윤형섭 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 민병규 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 장성재 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 정현욱 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 이종민 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 김성일 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 장우진 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 강동민 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 임종원 (한국전자통신연구원 ICT 소재부품연구소 RF/전력부품연구그룹) ;
  • 김완식 (LIG 넥스원(주)) ;
  • 정주용 (LIG 넥스원(주)) ;
  • 김종필 (LIG 넥스원(주)) ;
  • 서미희 (국방과학연구소) ;
  • 김소수 (국방과학연구소)
  • Received : 2019.01.23
  • Accepted : 2019.04.16
  • Published : 2019.04.30
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Abstract

A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current($I_{dss}$), an extrinsic transconductance($g_m$) of 1,090 mS/mm and a threshold voltage($V_{th}$) of -0.65 V. The $f_T$ and $f_{max}$ obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).

본 연구에서는 2단계 게이트 리세스 방법을 사용하여 T-형 게이트 길이가 100 nm인 mHEMT 소자를 제작하였다. 제작한 소자는 65 mA의 드레인전류($I_{dss}$), 1090 mS/mm의 트랜스콘덕턴스($g_m$), -0.65 V의 문턱전압 ($V_{th}$) 등의 DC 특성을 보였다. 또한 차단주파수($f_T$) 190 GHz와 최대 공진주파수($f_{MAX}$) 260 GHz인 우수한 고주파 특성을 나타내었다. 제작한 mHEMT 소자는 향후에 W-대역의 MMIC 개발에 활용될 수 있을 것으로 기대된다.

Keywords

JJPHCH_2019_v30n4_282_f0001.png 이미지

그림 1. GaAs 기반의 mHEMT 에피탁셜 구조 Fig. 1. Epitaxial structure of GaAs-based mHEMT.

JJPHCH_2019_v30n4_282_f0002.png 이미지

그림 2. 2-Finger 게이트(50 μm×2) 100 nm mHEMT. Fig. 2. 100 nm mHEMT with 2-finger gates(50 μm×2).

JJPHCH_2019_v30n4_282_f0003.png 이미지

그림 3. 100 nm T-gate mHEMT 소자의 단면도 Fig. 3. Cross-sectional view of 100nm T-gate mHEMT.

JJPHCH_2019_v30n4_282_f0005.png 이미지

그림 5. 100 nm mHEMT 소자의 transfer 특성 Fig. 5. Transfer characteristics of 100 nm mHEMT.

JJPHCH_2019_v30n4_282_f0006.png 이미지

그림 6. 100 nm mHEMT 소자의 RF 특성 Fig. 6. RF characteristics of 100 nm mHEMT devices.

JJPHCH_2019_v30n4_282_f0007.png 이미지

그림 4. 100 nm mHEMT 소자의 I-V 특성 Fig. 4. I-V characteristics of 100 nm mHEMT.

표 1. 100 nm mHEMT 소자의 DC 및 RF 특성의 비교 Table 1. Comparisons of DC/RF characteristics for 100 nm mHEMT devices.

JJPHCH_2019_v30n4_282_t0001.png 이미지

References

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