• Title/Summary/Keyword: 전위 분포

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Ground Surface Potential Distribution near Ground Rod Associated with Soil Structures (대지구조에 따른 접지봉 주번의 대지표면전위분포)

  • Lee, Bok-Hee;Jung, Hyun-Uk;Baek, Young-Hwan
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.21 no.1
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    • pp.142-147
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    • 2007
  • This paper presents the distributions of ground surface potential rises as functions of soil structure and buried depth of ground rod. To propose fundamental data relevant to the reduction of electric shock of human beings due to ground surface rise, the ground surface potential rises near the ground rod were computed and measured. Ground surface potential rises near ground rod strongly depend on the soil structure, and an increase of the buried depth of ground rod results in a decrease of the ground surface potentials. The maximum ground surface potential appeared at the just above point of ground rod. Also, the measured results were in reasonably agreement with the data computered by grounding analysis program.

EP Augmenting / Reducing : Personality Correlates and Topographic Distribution (증감뇌유발전위와 성격의 상호 관계영상)

  • Lee, Sung-Hoon;Haier, Richard J.
    • Sleep Medicine and Psychophysiology
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    • v.2 no.2
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    • pp.165-170
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    • 1995
  • Augmenting-reducing evoked potentials(AREP) were studied in 38 college students to explore the topographic distribution between AR slope and personality. The Zuckerman Seeking Scale(SSS) and Eysenck Personality Questionnaire(EPQ) assessed personality. There was a significant positive correlation between AR slope and Extraversion-Introversion(E) in the frontocentral area ; the right posterior area showed a significant negative correlation with E. The Thrill and Adventure Seeking(TAS) subscale showed a significant negative correlation with slope in the right posterior temporal area. The average slope map of all subjects revealed a distribution showing more augmenting in frontocentral areas and more reducing in posterior areas.

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On the LACBED Method to Determine the Nature of the Dislocation Defect in Crystalline Materials (결정체내의 전위 결함 형태를 결정하는 LACBED 방법에 관한 고찰)

  • Kim, Hwang-Su
    • Applied Microscopy
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    • v.35 no.4
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    • pp.64-73
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    • 2005
  • In this paper we discussed in details how to determine the nature of dislocations in a crystal such as a Burgers vector, the line vector of dislocation and the associated slip plane, using LACBED and usual imaging techniques. These techniques basically involve the application of Cherns and Prestone s rules, the simulations of LACBED patterns with a certain form of the dynamical diffraction theory. The theoretical aspects including necessary approximations for calculations also were in details discussed. As a test specimen for experiments, the foils of a pure aluminum, containing many dislocations with appropriate density for LACBED experiments, were used..

Analyses of Hazard Voltages According to the Buried Depth of Small-sized Model Grounding Electrode (축소형 모델 접지전극의 매설깊이에 따른 위험전압의 분석)

  • Paek, Young-Hwan;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.4
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    • pp.56-61
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    • 2009
  • This paper presents the ground surface potential profiles and hazard voltages around the metallic structure connected to a small-sized model ground electrode. Because it is very difficult to draw valid conclusions concerning a general grounding problem from actual field data, scale model tests can be used to determine the touch and stop voltages and surface potential profiles around ground electrode. In this work, a hemispherical vessel with a diameter of 1,100[mm] was employed to simulate uniform soil. As a result, the ground surface potential around the ground electrode was significantly raised In particular the ground surface potential at the just upper point of ground rod was higher than other points. When the buried depth of ground rod is increased, the ground surface potential and step voltage were lowered but the touch voltage was elevated.

Comparison of Measured Data and Theoretical Results for Potential Rise of Structure Using Electrolytic Tank Model (수조모델을 이용한 구조체의 전위상승에 대한 측정값과 계산값의 비교)

  • Gil, Hyoung-Jun;Kim, Dong-Woo;Choi, Chung-Seog;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.5
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    • pp.72-77
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    • 2006
  • This paper presents a comparison of experimental value by electrolytic tank experimental apparatus and calculated value by CDEGS program for potential rise of structure. When a test current flowed through structure models, potential rise was measured and analyzed for types of structure using the electrolytic tank experimental apparatus in real time, and was computed by means of CDEGS program. The structure models were designed and fabricated with four types on a scale of one-one hundred sixty. When the experimental data were compared with the theoretical values, the similar profile was shown. Therefore, the confidence of measurement was obtained. Potential rise was the lowest value at electric cage type(structure model B). The distributions of potential rise are dependent on the resistivity and absorption percentage in concrete attached to structure.

Stress Measurement of Structural Member Using Piezoelectric Property (압전 특성을 이용한 구조물 부재의 응력측정)

  • Im, Eun Sang;Kim, Tea Hoon
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.11 no.2
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    • pp.103-108
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    • 2007
  • A stress measurement method of structural member using piezoelectric property and electrostatic voltmeter is presented. The electric potentials of the surface of the piezoelectric element, which are proportional to the strain ${\varepsilon}$ on the structural member, are measured by an electrostatic voltmeter during load cycling. The stress ${\sigma}$ is calculated by this strain ${\varepsilon}$. Moreover, a stress distribution measurement tape which can be used for the stress distribution measurement along a specified line on the surface of structural member is developed, and the surface potential was measured by an electric static voltmeter of non-contact type. The applicability of the stress distribution measurement tape is examined through experiments using a notched specimen under cyclic loading. The measured distributions of x, y and xy are compared with those calculated by FEM analysis.

Electrical Impedance Tomography for Material Profile Reconstruction of Concrete Structures (콘크리트 구조의 재료 물성 재구성을 위한 전기 임피던스 단층촬영 기법)

  • Jung, Bong-Gu;Kim, Boyoung;Kang, Jun Won;Hwang, Jin-Ha
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.32 no.4
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    • pp.249-256
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    • 2019
  • This paper presents an optimization framework of electrical impedance tomography for characterizing electrical conductivity profiles of concrete structures in two dimensions. The framework utilizes a partial-differential-equation(PDE)-constrained optimization approach that can obtain the spatial distribution of electrical conductivity using measured electrical potentials from several electrodes located on the boundary of the concrete domain. The forward problem is formulated based on a complete electrode model(CEM) for the electrical potential of a medium due to current input. The CEM consists of a Laplace equation for electrical potential and boundary conditions to represent the current inputs to the electrodes on the surface. To validate the forward solution, electrical potential calculated by the finite element method is compared with that obtained using TCAD software. The PDE-constrained optimization approach seeks the optimal values of electrical conductivity on the domain of investigation while minimizing the Lagrangian function. The Lagrangian consists of least-squares objective functional and regularization terms augmented by the weak imposition of the governing equation and boundary conditions via Lagrange multipliers. Enforcing the stationarity of the Lagrangian leads to the Karush-Kuhn-Tucker condition to obtain an optimal solution for electrical conductivity within the target medium. Numerical inversion results are reported showing the reconstruction of the electrical conductivity profile of a concrete specimen in two dimensions.

ROLE OF NITRIC OXIDE AND DISTRIBUTION OF NITRIC OXIDE SYNTHASE IN THE GUSTATORY SYSTEM (미각계에서 산화질소의 역할과 산화질소 합성효소의 분포)

  • Kim, Young-Jae;Kim, Won-Jae;Ryu, Sun-Youl
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
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    • v.26 no.3
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    • pp.262-269
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    • 2000
  • 말초 미각계 및 중추 미각계에서 산화질소의 역할과 그것의 합성효소의 존재는 아직 규명되지 않고 있다. 본 연구는 말초미각계인혀와 미각구심성신경 그리고 중추미각계인 뇌간고속핵에서 산화질소 합성효소의 분포 및 면역조직화학 방법과 고삭신경의 extracellular recording 뇌간고속핵 절편 whole cell patch 방법으로 조사하였다. 신경성 산화질소 합성효소는 혀의 전방에 위치한 심상유두와 유곽유두에 약하게 존재하였으며 미뢰주위와 결체조직에 존재하는 신경섬유 및 혀의 상피층에 풍부하게 존재하였다. 혀에 소금물을 가하여 증가된 고삭신경의 복합전위는 산화질소 유리제인 SNP에 의해 증가되었으며 내인성 산화질소 합성효소 억제제인 L-NAME와 soluble guanylate cyclase 억제제인 ODQ에 의해 억제되었다. 문측 연수에 존재한 문측 고속핵과 진전핵에서 nNOS가 풍부하게 존재하였다. 문측 고속핵의 신경들은 안정막전위가 $-48{\pm}52mV$였고 활동전위의 크기는 $74{\pm}11mV$였다. SNP에 의해 뇌간 고속핵 신경들이 탈분극되었으며 current clamp하였을 때 활동전압의 빈도가 증가하였다. 또한 SNP에 의한 문측 고속핵의 탈분극과 활동전압 빈도증가는 L-NAME와 ODQ에 의해 감소되었다. 이상의 실험결과는 산화질소 합성효소가 혀와 뇌간고속핵에 존재하며 여기서 유리된 내인성 산화질소가 말초성 및 중추성 미각기전에 관여하리라 사료된다.

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Analysis of Center Potential and Subthreshold Swing in Junctionless Cylindrical Surrounding Gate and Doube Gate MOSFET (무접합 원통형 및 이중게이트 MOSFET에서 중심전위와 문턱전압이하 스윙 분석)

  • Jung, Hakkee
    • Journal of IKEEE
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    • v.22 no.1
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    • pp.74-79
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    • 2018
  • We analyzed the relationship between center potential and subthreshold swing (SS) of Junctionless Cylindrical Surrounding Gate (JLCSG) and Junctionless Double Gate (JLDG) MOSFET. The SS was obtained using the analytical potential distribution and the center potential, and SSs were compared and investigated according to the change of channel dimension. As a result, we observed that the change in central potential distribution directly affects the SS. As the channel thickness and oxide thickness increased, the SS increased more sensitively in JLDG. Therefore, it was found that JLCSG structure is more effective to reduce the short channel effect of the nano MOSFET.