• Title/Summary/Keyword: 전류이득

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A study on the Design of NPN BJT built-in SCR for Low Voltage Class ESD Protection (저전압급 ESD 보호를 위한 NPN BJT 내장형 SCR 설계에 관한 연구)

  • Jeong, Seung-Gu;Baek, Seung-Hwan;Lee, Byung-Seok;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.26 no.3
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    • pp.520-523
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    • 2022
  • In this paper, an ESD protection device with a simpler structure than the existing ESD protection device is proposed. The proposed new structure operates an additional NPN parasitic bipolar transistor by adding an N+ diffusion region and connecting it to the bridge region, thereby lowering the current gain. As a result, it was confirmed that the proposed ESD protection device has a trigger voltage of 10.8V and a holding voltage of 6.1V. It is expected to have reliability for 5V applications and is expected to have high tolerance characteristics.

A Study on the Design of ESD Protection Circuit for Prevention of Destruction and Efficiency of LDO Regulator (LDO 레귤레이터의 파괴방지 및 효율성을 위한 ESD 보호회로 설계에 대한 연구)

  • Jeong-Min Lee;Sang-Wook Kwon;Seung-Hwan Baek;Yong-Seo Koo
    • Journal of IKEEE
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    • v.27 no.3
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    • pp.258-264
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    • 2023
  • This paper proposes an LDO regulator with a built-in ESD (Electro Static Discharge) protection circuit to effectively operate and prevent destruction of the LDO (Low Drop Out) regulator according to the load current. The proposed LDO regulator can more effectively adjust the gate node voltage of the pass transistor according to the output voltage of the LDO regulator by using an additional feedback current circuit structure. In addition, it is expected to have high reliability for the ESD situation by embedding a new structure that increases the holding voltage by about 2V by reducing the current gain on the SCR loop by adding a P+ bridge to the existing ESD protection device.

Post-Linearization Technique of CMOS Cascode Low Noise Amplifier Using Dual Common Gate FETs (두 개의 공통 게이트 FET를 이용한 캐스코드형 CMOS 저잡음 증폭기의 후치 선형화 기법)

  • Huang, Guo-Chi;Kim, Tae-Sung;Kim, Seong-Kyun;Kim, Byung-Sung
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.7 s.361
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    • pp.41-46
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    • 2007
  • A novel post-linearization technique is proposed for CMOS cascode low noise amplifier (LNA). The technique uses dual common gate FETs one of which delivers the linear currents to a load and the other one sinks the $3^{rd}$ order intermodulation currents of output currents from the common source FET. Selective current branching can be implemented in $0.18{\mu}m$ CMOS process by using a thick oxide FET as an IM3 sinker with a normal FET as a linear current buffer. A differential LNA adopting this technique is designed at 2.14GHz. The measurement results show 11dBm IIP3, 15.5dB power gain and 2.85dB noise figure consuming 12.4mA from 1.8V power supply. Compared with the LNA with turning off the IM3 sinker, the proposed technique improves the IIP3 by 7.5 dB.

A Contactless Power Charging System using Half-Bridge Series Resonant Converter (Half-Bridge 직렬 공진컨버터 적용 비접촉 충전시스템)

  • Kim, Joo-Hoon;Song, Hwan-Kook;Kim, Eun-Soo;Park, Sung-Ho;Kim, Yoon-Ho
    • The Transactions of the Korean Institute of Power Electronics
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    • v.14 no.3
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    • pp.251-259
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    • 2009
  • In this paper, a contactless power supply using half-bridge series resonant converter that achieves ZVS operation of main switches and ZCS operation of secondary side diodes is proposed. Since the proposed contactless power supply using half-bridge series resonant converter operates with lower switching frequency than the resonant frequency, it can achieve ZCS operation of secondary side diodes due to discontinuous resonant current. And it is also possible to control the converter in narrow frequency range and to obtain high voltage gain, which, in turn, offers low turns ratio for the transformer and high efficiency. Based on the theoretical analysis and simulation results, the 3.15W prototype is built and the final experimental results are described.

Low-voltage high-linear bipolar OTA and its application to IF bandpass Filter (저전압 고선형 바이폴라 OTA와 이를 이용한 IF 대역통과 필터)

  • Chung, Won-Sup;Son, Sang-Hee
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.7 s.361
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    • pp.37-44
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    • 2007
  • A low-voltage high-linear bipolar OTA and its application to IF bandpass filter for GSM cellular telephone are presented. The OTA consists of a low-voltage linear transconductor, a translinear current gain cell, and three current mirrors. The bandpass filter is composed of two cascaded identical second-order bandpass filters, which consist of a resistor, a capacitor, and a grounded simulated inductor realized with two OTA's and a grounded capacitor. SPICE simulations using an 8 GHz bipolar transistor-array parameter show that the OTA with a transconductance of 1 mS exhibits a linearity error of less than ${\pm}2%$ over an input voltage range of ${\pm}0.65\;V$ at supply voltages of ${\pm}2.0\;V$. Temperature coefficient of the transconductance is less than $-90ppm/^{\circ}C$. The bandpass filter has a center frequency of 85 MHz and Q-factor of 80. Temperature coefficient of the center frequency is less than $-182ppm/^{\circ}C$. The power dissipation of the filter is 128 mW.

Lasing Characteristics of GaAs-Based 1300 nm Wavelength Region InAs Quantum Dot Laser Diode (GaAs 기반 1300 nm 파장대역 InAs 양자점 레이저 다이오드의 발진 특성)

  • Kim, K.W.;Choa, N.K.;Song, J.D.;Lee, J.I.;Park, Jeong-Ho;Lee, Y.J.;Choi, W.J.
    • Journal of the Korean Vacuum Society
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    • v.18 no.4
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    • pp.266-271
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    • 2009
  • We have investigated the lasing characteristics of GaAs-based 1300 nm wavelength region InAs Quantum Dot Laser Diode grown by Migration Enhanced Molecular Beam Epitaxy. Under a pulsed and CW operation, we observed the state switching of lasing wavelength from ground state (1302 nm) to excited state (1206 nm) due to the gain saturation of ground state. Under a pulsed operation, $J_{th}=92A/cm^2$, $\lambda_L=1311\;nm$ and under a CW operation, $J_{th}=247A/cm^2$, $\lambda_L=1320\;nm$.

High Gain and Broadband Millimeter-wave MHEMT Cascode Amplifier (고이득 및 광대역 특성의 밀리미터파 MHEMT Cascode 증폭기)

  • An, Dan;Lee, Bok-Hyung;Lim, Byeong-Ok;Lee, Mun-Kyo;Baek, Yong-Hyun;Chae, Yeon-Sik;Park, Hyung-Moo;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.8
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    • pp.105-111
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    • 2004
  • In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

Transistor Wide-Band Feedback Amplifiers (트랜지스터 광대역궤환증폭기)

  • 이병선;이상배
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.5 no.1
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    • pp.13-25
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    • 1968
  • A detailed analysis of the transistor wide-band feedback amplifiers using the hybrid-$\pi$ equivalent circuit has been made. It is considered both for the low freqnency and for the high frequency. The expressions of the gain, bandwidth. input impedance and output impedance have been presented. It is shown that a series feedback amplifier should be driven from the voltage source and should drive into the low resistance load, and a shunt feedback amplifier should be driven from the current source and should drive into the high resistance load. It is also shown that these stages can be coupled without use of the buffer stage or coupling transformer.

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Enhanced Voltage Gain Single-Phase Current-Fed qZ-Source Inverter (전압 이득이 향상된 단상 전류형 qZ-소스 인버터)

  • Shin, Hyun-Hak;Cha, Hon-Nyong;Kim, Heung-Geun
    • The Transactions of the Korean Institute of Power Electronics
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    • v.18 no.4
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    • pp.305-311
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    • 2013
  • This paper proposes a performance improvement of existing single-phase current-fed qZ-Source inverter. Voltage gain of the traditional voltage-fed full-bridge inverter and single-phase current-fed qZ-source inverter is only equal to or smaller than input voltage. The proposed inverter can obtain twice higher voltage gain than the single-phase current-fed qZ-Source inverter by adding an extra switch and a capacitor in the circuit. In addition, the proposed inverter shares the common ground between dc input and ac output voltage. Therefore, the proposed inverter can eliminate the possible ground leakage current problem when it is used for grid-tied photovoltaic inverter system. A 120 W prototype inverter is built and tested to verify performances of the proposed inverter.

A Study on Current, Velocity, Position Gain Tuning Technique of Servo Position Controller using Simulation (시뮬레이션을 이용한 서보 위치제어기의 전류, 속도, 위치이득 동조기법에 관한 연구)

  • Park, Ki-Woo
    • Journal of Institute of Control, Robotics and Systems
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    • v.17 no.7
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    • pp.634-640
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    • 2011
  • When a servo position controller of a robot or a driving units is composed of a PID controller, servomechanism which is modelled is composed of current, velocity and position control loops. After this model is simulated, the technique operating gain of each controller is suggested. The model consists of current, velocity and position controllers from the inside to the outside gradually. Also, to combine velocity and position controllers with 2 order system, simulation is performed after current controllers are composed, which are able for current loop to work ideally. If a current controller is treated with constant, it is possible for velocity and position controller to consist of controller into 2 order system. The technique is verified by applying T-company servo motor which is much more applied to current, velocity and position controller robots.