• Korean Journal of Materials Research
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• v.10 no.6
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• pp.437-444
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• 2000

We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

• Journal of Bio-Environment Control
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• v.20 no.2
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• pp.93-100
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• 2011

Maintenance of adequate soil water potential during the period of crop growth is necessary to support optimum plant growth and yields. A better understanding of soil water movement within and below the rooting zone can facilitate optimal irrigation scheduling aimed at minimizing the adverse effects of water stress on crop growth and development and the leaching of water below the root zone which can have adverse environmental effects. The objective of this study was to evaluate the feasibility of using a portable irrigation controller with an Watermark sensor for the cultivation of drip-irrigated vegetable crops in a greenhouse. The control capability of the irrigation controller for a soil water potential of -20 kPa was evaluated under summer conditions by cultivating 45-day-old tomato plants grown in three differently textured soils (sandy loam, loam, and loamy sands). Water contents through each soil profile were continuously monitored using three Sentek probes, each consisting of three capacitance sensors at 10, 20, and 30 cm depths. Even though a repeatable cycling of soil water potential occurred for the potential treatment, the lower limit of the Watermark (about 0 kPa) obtained in this study presented a limitation of using the Watermark sensor for optimal irrigation of tomato plants where -20 kPa was used as a point for triggering irrigations. This problem might be related to the slow response time and inadequate soil-sensor interface of the Watermark sensor as compared to a porous and ceramic cup-based tensiometer with a sensitive pressure transducer. In addition, the irrigation time of 50 to 60 min at each of the irrigation operation gave a rapid drop of the potential to zero, resulting in over irrigation of tomatoes. There were differences in water content among the three different soil types under the variable rate irrigation, showing a range of water contents of 16 to 24%, 17 to 28%, and 24 to 32% for loamy sand, sandy loam, and loam soils, respectively. The greatest rate increase in water content was observed in the top of 10 cm depth of sandy loam soil within almost 60 min from the start of irrigation.

• Economic and Environmental Geology
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• v.55 no.1
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• pp.111-125
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• 2022

Since landslide can cause huge damages to many facilities, close characterization of slopes is needed for appropriate reinforcements for the unstable ones in order to prevent the damages. Geophysical surveys, which can characterize a large area at a relatively low cost without disturbing slopes, have been widely employed for the assessment of slope stability in other countries. However, only conventional direct investigation methods are mainly used in Korea. In this paper, we analyzed various cases, which evaluated slope stabilities by characterizing slopes using geophysical exploration. First, we introduced changes in geophysical properties due to unstable media of slope like fracture location, fracture connectivity and distribution of groundwater level, and subsequently discussed the applicability of geophysical methods to the detection of the changes; the methods include electrical resistivity survey, seismic survey, self-potential survey, induced polarization survey and ground penetrating radar. Based on this description, we analyzed how geophysical surveys were performed on various slopes.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.64-70
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• 2012

We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.

• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.402-406
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• 2016

In order to investigate the thermal stability of electro-conductive poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT/PSS), we have prepared films by casting PEDOT/PSS aqueous solution without using a binding material and measured surface resistances of the films while annealing at $200^{\circ}C$. Electrical properties of films were improved by annealing, and the maximum conductivity ($540S{\cdot}m^{-1}$) after annealing for 2 hrs was found to be approximately 3 times higher than that ($180S{\cdot}m^{-1}$) of the original film. The conductivities, however, dramatically decreased with an increase in annealing time and dissipated after 24 hrs of annealing. On the other hand, PEDOT/PSS films hybridized with graphene oxide (GO) displayed a salient improvement in conductivity by annealing, which was measured to be around $600S{\cdot}m^{-1}$ even after 30 hrs of annealing at $200^{\circ}C$. We tentatively conclude that hybridization with GO enhances the thermal stability of PEDOT/PSS.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.110-115
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• 2010

Transparent conducting gallium-doped zinc oxide (GZO) thin films which were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The GZO thin films were fabricated with an GZO ceramic target (Zn : 97[wt%], $Ga_2O_3$ : 3[wt%]). The GZO thin films were deposited by varying the growth conditions such as the substrate temperature, oxygen pressure. Among the GZO thin films fabricated in this study, the one formed at conditions of the substrate temperature of 200[$^{\circ}C$], Ar flow rate of 50[sccm], $O_2$ flow rate of 5[sccm], rf power of 80[W] and working pressure of 5[mtorr] showed the best properties of an electrical resistivity of $2.536{\times}10^{-4}[{\Omega}{\cdot}cm]$, a carrier concentration of $7.746{\times}10^{20}[cm^{-3}]$, and a carrier mobility of 31.77[$cm^2/V{\cdot}S$], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• Journal of Korean Tunnelling and Underground Space Association
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• v.15 no.5
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• pp.505-522
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• 2013

Previously, a new concept of indexing methodology has been proposed for quantitative assessment of tunnel collapse hazard level at each tunnel face with respect to the given geological data, design condition and the corresponding construction activity (Shin et al, 2009a). In this paper, 'linear' model, in which weights of influence factors are invariable, and 'non-linear' model, in which weights of influence factors are variable, are taken into account with some examples. Then, the 'non-linear' model is validated by using 100 tunnel collapse cases. It appears that 'non-linear' model allows us to have adapted weight values of influence factors to characteristics of given tunnel site. In order to make a better understanding and help for an effective use of the system, a series of operating processes of the system are built up. Then, by following the processes, the system is applied to a real-life tunnel project in very weak and varying ground conditions. Through this approach, it would be quite apparent that the tunnel collapse hazard indices are determined by well interlinked consideration of face mapping data as well as design/construction data. The calculated indices seem to be in good agreement with available electric resistivity distribution and design/construction status. In addition, This approach could enhance effective usage of face mapping data and lead timely and well corresponding field reactions to situation of weak tunnel faces.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.333-341
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• 2012

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

• The Journal of Information Technology
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• v.7 no.2
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• pp.69-76
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• 2004

This paper presents the results of spectral analysis about waveforms and leakage current waveforms on contaminated silicon insulators under various environment conditions.(salt fog, clean fog, rain). The larger the leakage current during 200ms, the higher the power spectrum at 60Hz. If contaminated insulators suffers from high salt density fog, the leakage current occurs with high crest value intermittently, results in the low spectrum. Analysis of leakage current data showed that this electrical activity was characterized by transient arcing behavior contaminants are deposited on the insulator surface during salt fog tests. This provides a path for the leakage current to flow along the surface of the insulator. It is important to have an indication of the pollution accumulation in order to evaluate the test performance of a particular insulator. If the drop in surface resistivity is severe enough, then the leakage current may escalate into service interrupting flashover that degrade power quality.