Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Properties of Indium Tin Oxide Thin Films According to Oxygen Flow Rates by γ-FIB System

γ-FIB 시스템을 이용한 산소 유량 변화에 따른 산화인듐주석 박막의 특성 연구

  • Kim, D.H. (Department of Electrophysics, Kwangwoon University) ;
  • Son, C.H. (Department of Electrophysics, Kwangwoon University) ;
  • Yun, M.S. (Department of Electrophysics, Kwangwoon University) ;
  • Lee, K.A. (Department of Electrophysics, Kwangwoon University) ;
  • Jo, T.H. (Department of Electrophysics, Kwangwoon University) ;
  • Seo, I.W. (Department of Electrophysics, Kwangwoon University) ;
  • Uhm, H.S. (Department of Electrophysics, Kwangwoon University) ;
  • Kim, I.T. (Department of Chemistry, Kwangwoon University) ;
  • Choi, E.H. (Department of Electrophysics, Kwangwoon University) ;
  • Cho, G.S. (Department of Electrophysics, Kwangwoon University) ;
  • Kwon, G.C. (Department of Electrophysics, Kwangwoon University)
  • Received : 2012.09.19
  • Accepted : 2012.10.28
  • Published : 2012.11.30
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Abstract

Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

본 연구는 RF 마그네트론 스퍼터링법을 이용하여 산소유량 변화에 따라 증착된 ITO 박막 구조적, 전기적, 광학적 특성을 분석하였다. ITO (Indium Tin Oxide) 박막은 $1.0{\times}10^{-3}$ Torr의 공정 압력과 2 kW 및 13.56 MHz의 RF 전력, 1,000 sccm의 Ar 가스 조건하에 0~12 sccm의 $O_2$ 가스 유량을 변경하면서 증착하였다. 광투과율 측정은 적분구를 이용하였으며, 측정 파장 범위는 300~1,100 nm이다. 4-point probe를 이용하여 면저항을 측정하였으며, Hall Measurement System을 이용하여 비저항, 캐리어 농도 및 전자이동도를 측정하였다. Scanning electron microscope 장비를 이용하여 ITO 박막 표면을 분석하였고, 박막의 거칠기는 Atomic force microscope을 이용하여 측정하였다. ${\gamma}$-Focused ion beam system을 이용하여 ITO 박막의 이차전자방출계수를 측정하였으며, 이차전자방출계수 값으로 Auger neutralization mechanism 분석법을 이용해 ITO 박막의 일함수를 결정하였다. 3 sccm의 산소 유량에서 증착된 ITO 박막의 비저항은 약 $2.4{\times}10^{-4}{\Omega}{\cdot}cm$로 가장 좋았으며, 광학적 특성 또한 84.93% (Weighted average)로 가장 좋은 것을 확인할 수 있었다. 이 조건에서 이차전자방출 계수가 가장 높았고 일함수는 가장 낮은 경향의 일치함을 확인하였다.

Keywords

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