• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.2 no.3
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• pp.32-40
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• 1991

A modified transmission line model is proposed for input impedance analysis of a square microstip antenna with single-circularly-polarized. Alog-periodic arrangement with microstrip antenna (LPMA) which consists of 3 resonant element ($3\times1$) is designed for broadband operation ranging from 11.2 GHz to 12.4 GHz, based on this pro- posed model from transmission line model. Aplanar array ($3\times4$array), in which 4sets of the above LPMA are in the same plane, is fabricated for high gain X-band satellite communication antennas. The optimum spacing between each LPMA is determined using computer simulation for the minimum bariation of far field pattern and null. This $3\times4$array has a measured values of gain greater than 8dBi, VSWR les then 2.3, and bandwidth greater than 7% respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.372-378
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• 2007

This paper presents an improvement of field uniformity in a reverberation chamber with QRDs(Quadratic Residue Diffuser) and also shows the optimal dimension of the QRDs. The QRD is designed for $1{\sim}3\;GHz$ frequency band and the FDTD(finite-Difference Time-Domain) method is used to analyze the field characteristics. At 2 GHz, the standard deviation of test volume in the reverberation chamber is the smallest when the QRD has $30{\sim}60\;%$ coverage of one side of the reverberation chamber and the field uniformity is worsened when the coverage of the QRD is either below 20 % or above 70 % of the area of the side wall. Particularly, the standard deviation of test volume in the reverberation chamber with 30 % coverage of QRD is improved by 1.53 dB compared to that of the reference chamber with no QRDs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.697-703
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• 2000

As device dimensions are lastly scaled down, impact ionization(I.I.) events are very important to analyze hot carrier transport in high energy region, and the exact model of impact ionization is demanded on device simulation. We calculate full band model by empirical pseudopotential method and the impact ionization rate is derived from modified Keldysh formula. We calculate impact ionization coefficients by full band Monte Carlo simulator to investigate temperature dependent characteristics of impact ionization for GaAs as a function of field. Resultly impact ionization coefficients are in good agreement with experimental values at look. We how energy is increasing along increasing the field, while energy is decreasing along increasing the temperature since the phonon scattering rates for emission mode are very high at high temperature. The logarithmic fitting function of impact ionization coefficients is described as a second orders function of temperature and field. The residuals of the logarithmic fitting function are mostly within 5%. We Dow, therefore, the logarithm of impact ionization coefficients has quadratic dependence on temperature, and we can save time of calculating the temperature dependent impact ionization coefncients as a function of field.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.626-626
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• 2013

P-N 접합에 의해 절연된 게이트를 통해 전류 통로를 제어하는 접합형 전계효과 트랜지스터(Junction Field Effect Transistors; JFETs)는, 입력 임피던스가 크고, 온도에 덜 민감하며, 제조가 간편하여 집적회로(IC) 제조가 용이하고, 동작의 해석이 단순하다는 장점을 가지고 있다. 특히 JFET는 선형적인 전류의 증폭 특성을 가지고 있으며, 잡음이작기 때문에, 감도가 우수한 음향 센서의 증폭회로, 선형성이 우수한 증폭회로, 입력 계측 증폭 회로 등에 주로 사용되고 있다. 기존에 사용되는 JFET 소자는 구조와 제조 공정에 따라서, 컷 오프 전압($V_{cut-off}$)과 드레인-소스 포화 전류($I_{DSS}$)의 변화가 심하게 발생하여, 소자의 전기적 특성 제어가 어렵고, 소자의 수율이 낮다는 문제점이 있다. 본 연구에서는 TCAD 시뮬레이션을 통해 게이트 전압에 의해 채널이 형성되는 채널 층의 상하부에 각각 $Si_xGe_{1-x}$로 이루어진 상부 및 하부 확산 저지층을 삽입한 JFET 소자 형성하여, 게이트 접합부의 접합 영역 확산을 저지하고, 상기 게이트 접합부가 계면에서 날카로운 농도 구배를 갖도록 함으로써, 공정 변화에 따른 전기적 특성의 편차가 작아지는 JFET 소자 구조를 만들어 전기적 특성을 개선하였다. JFET은 채널층에 삽입된 $Si_xGe_{1-x}$ 층의 두께, Ge 함유량 및 n채널층의 두께를 변화하였을 때, off 상태의 게이트-소스 전압이 감소한 반면에 드레인-소스 포화 전류($I_{DSS}$)와 컨덕턴스(gm) 값이 증가하였다. 삽입된 $Si_xGe_{1-x}$층이 Boron이 밖으로 확산되는 현상이 감소하여 채널이 좁아지는 현상을 막아 소자의 전기적 특성을 개선함으로써 제조공정의 변화에 관계없이 컷오프 전압을 정확하고 안정되게 제어할 수 있고 이를 통해 소자의 수율을 높일 수 있을 것으로 기대된다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.2
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• pp.68-74
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• 2000

The problem of electromagnetic coupling through a narrow slit in a parallel-plate waveguide(PPW) covered by a dielectric slab with a conducting strip on the slab is considered for the case that the TEM wave is incident in the PPW. Coupled integral equations for the tangential electric field in the slit and the induced current over the strip are derived and solved numerically by use of the method of moments. In order to show the effect of the conducting strip on the coupling, some numerical results for the reflected and transmitted powers in the guide, the coupled power through the slit, the equivalent slit admittance, and radiation pattern are presented. From the results, it is observed that the maximum available power coupled through the slit exterior to the PPW amounts upto 50% of the incident power in the PPW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.67-75
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• 2011

This paper investigates the radiated emission from the enclosure aperture, when the enclosure contains a 4-layer PCB and the PCB is driven by a pulse train additive with the switching noise from an active device. Radiated emission characteristics with and without switch noise cases, respectively, are analyzed by changing the PCB location and the slot direction. The equivalent circuit of a DC-DC converter is used to simulate the switching noise of active device. Also, MWS simulation results are directly connected to the ADS simulator as a 2-port block. The simulated results are compared with the measured ones.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.4
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• pp.103-109
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• 1999

In this paper, we proposed to a new structure of T-shaped fed microstrip slot antenna using 2-layers dielectric material with a directional radiation characteristic. When the slot antenna of bi-directional radiation want to radiate only one direction, the reflector must be set up, but this antenna does'nt need set up reflector. T-shaped microstrip feed line is proposed for a better impedance matching to the microstrip slot antenna in a various range of slot widths. It was also found that the bandwidth of this antenna is proportional to the slot width. It was also found that the radiation resistance of this feed line structure is quite constant and low regardless to the slot width. We also analyzed this antenna by using the FDTD method, and calculating waves and electric field distribution in the time domain. we also are calculated return loss, VSWR, and radiation pattern in the frequency domain by Fourier transforming the time domain results, respectively. From the measured results, bandwidth was 34.8% in the center frequency. These results were in relatively good accordance with the calculated values.

• Composites Research
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• v.29 no.4
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• pp.161-166
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• 2016

Carbon nanotube buckypaper (CNTs-BP)/thermoplastic polyurethane (PU) elastomer composites were successfully fabricated. The CNTs-BP/PU nanocomposites exhibited simultaneous improvements in both tensile modulus and strength by 1360 and 430%, respectively, as compared to pure PU. Possible reinforcing mechanisms were evidenced by SEM analyses and tensile tests. The CNTs-BP/PU nanocomposites can be potentially used as an inter-reinforcing agent in ultra-lightweight, high-strength aircraft, carbon-fiber-reinforced plastics, etc.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.3
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• pp.35-42
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• 2000

A cross-shaped microstripline-fed printed slot antenna having wide bandwidth Is presented in this paper. The proposed antenna is analyzed by using the Finite-Difference Time-Domain (FDTD) method. It was found that the bandwidth of the antenna depends highly on the length of the horizontal and vertical feedline as well as the offset position of the feedline. The maximum bandwidth of this antenna is from 1.975 GHz to 4.725 GHz, which is approximately 1.3 octave, for the VSWR $\leq$ 2. Experimental data for the return loss and the radiation pattern of the antenna are also presented. and they are in good agreement with the FDTD results.e FDTD results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.6
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• pp.788-801
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• 1998

Meteor Burst Communication can provide effective and economical means of communication where long distance VHF NLOS data transmission is needed ; often ranges more than 1000 km. It has been, however, so far considered unsuitable for short distance application because of phenomenal decrease in burst durations, which leads to decreation of total duty rate of the system. This paper extensively analyzes characteristics of shot distance MB(Meteor Burst) path and shows the low duty rate may be improved by increasing burst rate through adapting antennal beam width to cover entire hot-spot region in the space and, by compensating effective burst length throughcutting down man-made noises introduced by antennal. Based on the analysis, we are developed a small-opening-cavity antennal, especially designed for short distance MB path. In operation, the antenna is to be buried under ground surface so as to improve directivity and reduces noise introduction. The antennal exhibits power gain of 3 dB with 90 degree beam width and thus enables to illuminate entire hot-spot regions with the elevation angle of 8-90 degree which is the case of transmission less than 100 km. Directivity horizontal to earth surface is suppressed to minimum which enables to cut man-made noises from near-by sources down to more than 3 dB from the level reported with conventional 4 element Yagi. A series of experiments performed on 100km MB paths have conformed that, with the antenna installed at receiving site, the burst rate and duration time have been noticed to increase by 10 and 20 percent respectively from the values obtained by conventional 4-element Yagi antennal under same testing condition.