• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
• /
• pp.35-38
• /
• 2002

In this paper, for digital x-ray conversion receptor development studied by hybrid technology of based on CdZnTe. For this study, First searched fabricate method of CdZnTe x-ray receptor. Second, search the phosphor material & fabricate method for scintillator layer. Fabricated sample is analyzed with physical & electric measurement. This result is showed good SNR ratio hybrid thechnology with direct method & indirect method. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
• /
• pp.39-42
• /
• 2002

There is a renewed interest in the application of photoconductors especially Cd(Zn)Te to x-ray imaging. In this paper, We investigate effects on x-ray detection characteristic of Zn dopped CdTe detector. Cd(Zn)Te film was fabricated by vacuum thermal evaporation method and then investigate physical analysis using EPMA and XRD. We investigated the leakage current and X-ray photosensitivity as applied voltage about fabricated Cd(Zn)Te film. Experimental results showed that the increase of Zn dopped concentration in $Cd_{1-x}Zn_{x}Te$ detector reduced a leakage current and improved a signal to noise ratio significantly.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
• /
• pp.27-30
• /
• 2002

Photoconductor for direct detection flat-panel imager present a great materials challenge, since their requirements include high X -ray absorption, ionization and charge collection, low leakage current and large area deposition. Selenium is practical material. But it needs high thickness and high voltage in selenium for high ionization rate. We report comparative studies of detector sensitivity. One is an a-Se with $70{\mu}m$ thickness on glass. The other has hybrid layer of depositting ZnS phosphor with $100{\mu}m$ on a-Se. The leakage current of hybrid is similar to it of a-Se, but photocurrent is lager than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.853-856
• /
• 2002

Present. direct method x-ray conversion detector is studied by abroad medical instrument and country with amorphous Selenium. And we search the method for large area x-ray detector. Amorphous-Selenium based photoreceptor is widely used on the X-ray conversion materials. But amorphous-selenium based x-ray conversion detector is broken by high voltage and leakage defect point. In this paper, We investigated top-electrode distance rate to improve defect point and high voltage broken. The result to appoint to made large area x-ray conversion detector with base data.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.845-848
• /
• 2002

The study of photoconductor materials is demanded for development for flat-panel digital x-ray Imager. In this paper, We investigated the feasibility of application as x-ray image sensor using Cd(Zn)Te compound with high stopping power on high radiation. These Cd(Zn)Te samples were fabricated by vacuum thermal evaporation method to large area deposition and investigated I-V measurement as applied voltage. The experimental results show that the additional injection Zn in CdTe film reduced the leakage current, for the $Cd_{0.85}Zn_{0.15}Te$ detector, the net charge had the highest value as $144.58pC/cm^2$ at 30 V.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.849-852
• /
• 2002

Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.43-49
• /
• 2002

Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at 1380$^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15∼40 nm width and 10-70 $\mu\textrm{m}$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along [110] direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures.

• 한국전기전자재료학회논문지
• /
• 제15권8호
• /
• pp.651-657
• /
• 2002

Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at $1380^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15~40nm width and 10~70 $\mu m$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along ［110］ direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.710-713
• /
• 2003

The PZT(KP12) powder was synthesized by sintering at $1250^{\circ}C$ for 2hrs and wet milling for 24 hrs. The PZT composite mixed with PVdF was fabricated into bulk, sheet, and plate type and the characteristics of three types were estimated. The bulk type which has PZT volume percent of 70 showed the best piezoelectric constant. Dielectric constant increased exponentially as an increase of PZT volume percent. The figure of merit of bulk and plate type was better than pure PZT over PZT volume percent of 50.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.199-202
• /
• 2004

NFGM(Nano-Floating Gate Memory) is a very prospective candidate memory for the next generation with MRAM, PRAM, PoRAM. Among these memory devices for the next generation, NFGM has a lot of merits such as a simple low cost fabrication process, improved retention time, lower operating voltages, high speed program/erase time and so on. Therefore, many intensive researches for NFGM have been performed to improve device performance and reliability, which depends on the ability to control particle size, size distribution, crystallity, areal particle density and tunneling oxide quality. In this paper, we investigate the researches for NFGM up to recently.