• Geophysics and Geophysical Exploration
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• v.10 no.1
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• pp.50-59
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• 2007

The advent of towed geo-electrical array surveying on water and land has resulted in datasets of magnitude approaching that of airborne electromagnetic surveying and most suited to 1D inversion. Robustness and complete automation is essential if processing and reliable interpretation of such data is to be viable. Sharp boundaries such as river beds and the top of saline aquifers must be resolved so use of smoothness constraints must be minimised. Suitable inversion algorithms must intelligently handle low signal-to-noise ratio data if conductive basement, that attenuates signal, is not to be misrepresented. A noise-level aware inversion algorithm that operates with one elastic thickness layer per electrode configuration has been coded. The noise-level aware inversion identifies if conductive basement has attenuated signal levels so that they are below noise level, and models conductive basement where appropriate. Layers in the initial models are distributed to span the effective depths of each of the geo-electric array quadrupoles. The algorithm works optimally on data collected using geo-electric arrays with an approximately exponential distribution of quadrupole effective depths. Inversion of data from arrays with linear electrodes, used to reduce contact resistance, and capacitive-line antennae is plausible. This paper demonstrates the effectiveness of the algorithm using theoretical examples and an example from a salt interception scheme on the Murray River, Australia.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.6
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• pp.39-47
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• 1998

A fourth-order $\Sigma$-$\Delta$ modulator is designed and implemented in 0.6 $\mu\textrm{m}$ CMOS technology. The modulator is verified by introducing nonlinear factors such as DC gain and slew rate in system model that determines the transfer function in S-domain and in time-domain. Dynamic range is more than 110 dB and the peak SM is 102.6 dB at a clock rate of 2.8224 MHz for voiceband signal. The structure of a ∑-$\Delta$ modulator is a modified fourth-order ∑-$\Delta$ modulator using direct feedback loop method, which improves performance and consumes less power. The transmission zero for noise is located in the first-second integrator loop, which reduces entire size of capacitors, reduces the active area of the chip, improves the performance, and reduces power dissipation. The system is stable because the output variation with respect to unit time is small compared with that of the third integrator. It is easy to implement because the size of the capacitor in the first integrator, and the size of the third integrator is small because we use the noise reduction technique. This paper represents a new design method by modeling that conceptually decides transfer function in S-domain and in Z-domain, determines the cutoff frequency of signal, maximizes signal power in each integrator, and decides optimal transmission-zero frequency for noise. The active area of the prototype chip is 5.25$\textrm{mm}^2$, and it dissipates 10 mW of power from a 5V supply.

• Journal of Internet Computing and Services
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• v.19 no.3
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• pp.49-56
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• 2018

Euclidean distance (ED) between error distribution and Dirac delta function has been used as an efficient performance criterion in impulsive noise environmentsdue to the outlier-cutting effect of Gaussian kernel for error signal. The gradient of ED for its minimization has two components; $A_k$ for kernel function of error pairs and the other $B_k$ for kernel function of errors. In this paper, it is analyzed that the first component is to govern gathering close together error samples, and the other one $B_k$ is to conduct error-sample concentration on zero. Based upon this analysis, it is proposed to normalize $A_k$ and $B_k$ with power of inputs which are modified by kernelled error pairs or errors for the purpose of reinforcing their roles of narrowing error-gap and drawing error samples to zero. Through comparison of fluctuation of steady state MSE and value of minimum MSE in the results of simulation of multipath equalization under impulsive noise, their roles and efficiency of the proposed normalization method are verified.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.49-56
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• 2004

A new readout circuit(ROIC) for linear HgCdTe 64${\times}$2 two-color Infrared (IR) detector is described. This circuit is based on the buffered direct injection(BDI) technology with high injection efficiency. By using saturation current isolation circuit, the proposed ROIC removed the problems that LWIR(Long Wavelength InfraRed) signal distort when MWIR(Middle Wavelength InfraRed) signal saturates so that new ROIC has larger measurable temperature range about 120k than that of previous circuit and it is also tolerant for dead pixel in MWIR detector. The designed circuit was fabricated using 0.6um 2-poly 3-metal CMOS process. We measured that the designed circuit outputs MWIR signal and LWIR signal simultaneously and saturation current isolationcircuit also operates well. Next, measured noise was about 53uV at room temperature and it can be assumed that designed circuit can satisfy nearly 95% BLIP condition at 77K.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.8A
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• pp.610-617
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• 2009

This paper proposes a cross-layer design combining adaptive modulation and coding (AMC) with truncated hybrid automatic repeat request (HARQ) for wireless multicast transmission, in order to increase the spectral efficiency while meeting the target quality-of-service (QoS). In the design, we provide the selection criterion of AMC so as to satisfy the target packet error rate (PER) of all users when the multicast data is received through the common channel and the number of retransmission is limited by the delay constraint of the service. The analytically derived results show that the cross-layer design using HARQ provides a better spectral efficiency than the AMC without HARQ by allowing retransmission and code combining. It is also observed that the design for multicast outperforms that for unicast in the mid to high signal-to-noise ratio region.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.4
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• pp.28-34
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• 2000

In this paper, a continuous-time filter for low voltage and high frequency applications using fully-balanced current integrators is presented. As the balanced structure of integrator circuits, the designed filter has improved noise characteristics and wide dynamic range since even-order harmonics are cancelled and the input signal range is doubled. Using complementary current mirrors, bias circuits are simplified and the cutoff frequency of filters can be controlled easily by a single DC bias current. As a design example, the 3rd-order lowpass Butterworth filter with a leapfrog realization is designed. The designed fully-balanced current-mode filter is simulated and examined by SPICE using 0.65${\mu}{\textrm}{m}$ CMOS n-well process parameters. The simulation results show 50MHz cutoff frequency, 69㏈ dynamic range with 1% total harmonic distortion(THD), and 4㎽ power dissipation with a 3V supply voltage.

• Journal of IKEEE
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• v.20 no.3
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• pp.299-302
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• 2016

In this paper, we designed the stack monitoring system with improved performance. To block the incoming pulse noise to the amplifier, shield and the power supply impedance are reduced and the power circuit is isolated. The control unit is developed with variable high voltage, adaptive gain, offset and threshold in order to match the scintillation detector characteristic to the apparatus. 300-1500V variable high voltage power circuit is configured applicable to various scintillation detector. Stack monitoring system with improved performance guarantee the efficiency and the reliability by considering the characteristic of various scintillation detector. Developed stack monitoring system is evaluated with certified testing equipment and shows excellent performance with respect to the uncertainty of the sensor test results.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.49-55
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• 2013

A high-voltage highly-integrated analog front-end (AFE) IC for medical ultrasound imaging applications is implemented using standard 0.18-${\mu}m$ CMOS process. The proposed AFE IC is composed of a high-voltage (HV) pulser utilizing stacked transistors generating up to 15 Vp-p pulses at 2.6 MHz, a low-voltage low-noise transimpedance preamplifier, and a HV switch for isolation between the transmit and receive parts. The designed IC consumes less than $0.15mm^2$ of core area, making it feasible to be applied for multi-array medical ultrasound imaging systems, including portable handheld applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.310-312
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• 2011

In complex noise environment, digital filter is being used to obtain, transport and storage original voice or image signal. Digital filter can be largely separated FIR(Finite duration impulse response) filter and IIR(Infinite duration impulse response) filter. Among FIR filter, window function has characteristic of linear phase and as can be easily set pass-band frequency, cutoff frequency and so on. In this paper, We compared with established method using transient characteristic and peak side-lobe in order to check filter characteristics after we designed the existing variants of the window function.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.9-14
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• 2005

This paper reports the hot carrier induced RF performance degradation of bulk dynamic threshold voltage MOSFET (B-DTMOS) compared with bulk MOSFET (B-MOS). In the normal and moderate mode operations, the degradations of cut-off frequency $(f_{T})$ and minimum noise figure $(F_{min})$ of B-DTMOS are less significant than those of B-MOS devices. Our experimental results show that the RF performance degradation is more significant than the U performance degradation after hot carrier stressing. Also, the degradation characteristics of RF power Performance of B-DTMOS due to hot carrier effects are measured for the first time.