• Title/Summary/Keyword: 잉곳

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Effect of defects on lifetime of silicon electrodes and rings in plasma etcher (플라즈마 에쳐용 실리콘 전극과 링의 수명에 미치는 결함의 영향)

  • Eum, Jung-Hyun;Chae, Jung-Min;Pee, Jae-Hwan;Lee, Sung-Min;Choi, Kyoon;Kim, Sang-Jin;Hong, Tae-Sik;Hwang, Choong-Ho;Ahn, Hak-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.2
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    • pp.101-105
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    • 2010

  • Silicon electrode and ring in a plasma etcher those are in contact with harsh plasma suffer from periodic heating and cooling during their lifetime. This causes the silicon components failure due to thermal stress remaining the persistent slip bands (PSBs) on their surfaces. The factors that determine the lifetime of silicon electrode and ring were discussed with respect to silicon ingot. The impurity level and the average defect concentration measured with glow discharge mass spectrometer (GDMS) and microwave photo-conductance decay (${\mu}$-PCD) were compared with the grade of silicon ingots those are divided to slip-free and slip-allowed ingot. Some silp-allowed samples showed planar defects along <110> direction on {001} surface. The role of these defects was suggested from the viewpoint of the lifetime of silicon components.

  • https://doi.org/10.6111/JKCGCT.2010.20.2.101 인용 PDF KSCI

Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth (전산해석을 통한 키로플러스 사파이어 단결정 성장공정의 유동 및 remelting 현상 분석)

  • Kim, Jin Hyung;Park, Yong Ho;Lee, Young Cheol
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.3
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    • pp.129-134
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    • 2013

  • Sapphire wafers are used as an important substrate for the production of blue LED (light emitting diode) and the LED's performance largely depends on the quality of the sapphire single crystals. There are several crystal growth methods for sapphire crystals and Kyropoulos method is an efficient way to grow large diameter and high-quality sapphire single crystals with low dislocation density. During Kyropoulos growth, the convection of molten melt is largely influenced by the hot zone geometry such as crucible shape, heater and refractory arrangements. In this study, CFD (computational fluid dynamics) simulations were performed according to the bottom/side ratios (per unit of the crucible surface area) of heaters. And, based on the results of analysis, the molten alumina flows and remelting phenomena were analyzed.

  • https://doi.org/10.6111/JKCGCT.2013.23.3.129 인용 PDF KSCI

Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth (대형 다결정 실리콘 잉곳 성장을 위한 ADS 법의 열유동에 관한 공정모사)

  • Shur, J.W.;Hwang, J.H.;Kim, Y.J.;Moon, S.J.;So, W.W.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.1
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    • pp.45-49
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    • 2008

  • The development of manufacturing process of silicon (Si) ingots is one of the important issues to the growth of the photovoltaic industry. Polycrystalline Si wafers shares more than 60% of the photovoltaic market due to its cost advantage compared to mono crystalline silicon wafers. Several solidification processes have been developed by industry including casting, heat exchange method (HEM) and electromagnetic casting. In this paper, the advanced directional solidification (ADS) method is used to growth of large sized polycrystalline Si ingot. This method has the advantages of the small heat loss, short cycle time and efficient directional solidification. The numerical simulation of the process is applied using a fluid dynamics model to simulate the temperature distribution. The results of simulations are confirmed efficient directional solidification to the growth of large sized polycrystalline Si ingot above 240 kg.

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A study on the brownish ring of quartz glass crucible for silicon single crystal ingot (실리콘 단결정 잉곳용 석영유리 도가니의 brownish ring에 대한 연구)

  • Jung, YoonSung;Choi, Jae Ho;Min, Kyung Won;Byun, Young Min;Im, Won Bin;Noh, Sung-Hun;Kang, Nam-Hun;Kim, Hyeong-Jun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.3
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    • pp.115-120
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    • 2022

  • A brown ring (hereinafter referred to as BR) on the inner surface of a quartz glass crucible used in the manufacturing process of a silicon ingot for semiconductor wafers was studied. BR is 20~30 ㎛ in size and has an asymmetric brown ring shape. The size and distribution of BR were different depending on the crucible location, and the size and distribution of BR were the largest and most abundant in the round part with the highest crucible temperature during Si ingot growth. BR contains cristobalite, which has a higher coefficient of thermal expansion than quartz glass, so it is considered that surface cracks appear. The color development of BR and pin holes are presumed to be due to oxygen vacancies.

  • https://doi.org/10.6111/JKCGCT.2022.32.3.115 인용 PDF KSCI