• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.852-856
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• 2015

In this study, we investigate the effect of high-energy ball milling on thermoelectric transport properties in double-filled $CoSb_3$ skutterudite ($In_{0.2}Yb_{0.1}Co_4Sb_{12}$). $In_{0.2}Yb_{0.1}Co_4Sb_{12}$ powders are milled using high-energy ball milling for different periods of time (0, 5, 10, and 20 min), and the milled powders are consolidated into bulk samples by spark plasma sintering. Microstructure analysis shows that the high-energy ball milled bulk samples are composed of nano- and micro-grains. Because the filling fractions are reduced in the bulk samples due to the kinetic energy of the high-energy ball milling, the carrier concentration of the bulk samples decreases with the ball milling time. Furthermore, the mobility of the bulk samples also decreases with the ball milling time due to enhanced grain boundary scattering of electrons. Reduction of electrical conductivity by ball milling has a decisive effect on thermoelectric transport in the bulk samples, power factor decreases with the ball milling time.

• Journal of the Korea Organic Resources Recycling Association
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• v.26 no.1
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• pp.39-45
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• 2018

Research on FA(Fly ash) is actively carried out, while the research on BA(Bottom ash) is not so, and research on BA recycling field is urgently required. Therefore, in this study, we investigated the lightweight and thermal insulation characteristics of BA mortar by comparing BA mortar made with porous dry BA(air-cooled) and general mortar. To investigate the lightweight of BA, density test, unit volume mass test and SEM(Scanning Electron Microscope) test were performed. BA mortar and general mortar molds were prepared for the thermal insulation test at room temperature and humidity environment determined by KS A 0006 and they were dried at the temperature of $105{\pm}2^{\circ}C$ until the weight became constant. As a result of the lightweight test, the lightweight of BA mortar is about 30% lighter than the general mortar. Therefore, BA is expected to contribute to reduce the building load when used as building material. As a result of thermal insulation test, the thermal conductivity of BA mortar is about 30% better than that of general mortar.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.15-21
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• 2008

SiC has an excellent resistance to oxidation and corrosion, high temperature strength and good thermal conductivity. However, it is difficult to density because of its highly covalent bonding characteristics. Hot-press sintering process was applied to fabricate fully densified SiC ceramics with carbon and boron addition as a sintering additive. The addition of carbon improved the mechanical properties of SiC because it could induce a fine and homogeneous microstructure by the suppression of abnormal growth of SiC grain. Also, the addition of carbon could control the phase transformation of SiC. The phase transformation of 6H to 4H increased with sintering temperature but the addition of carbon decreased that kind of phase transformation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.246-252
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• 2017

Pulverized $FeS_2$ (pyrite) gives different discharge test results with as-received $FeS_2$ electrodes. The as-received $FeS_2$ electrode shows three voltage plateaus during the discharge test. However, the ball-milled $FeS_2$ electrode shows two voltage plateaus. To interpret this result, the effect of $FeS_2$ particle size on electrochemical reactions is investigated by unit cell discharge tests, SEM and XRD. As a result, it is found that the transition reaction product ($Li_2+xFe+xS_2$) of $FeS_2$ explains the difference. The as-received $FeS_2$ reacts according to three reaction steps ($FeS_2{\rightarrow}Li_3Fe_2S_4{\rightarrow}Li_2+xFe_1+xS_2{\rightarrow}LiFe_2S_4$). However, ball-milled $FeS_2$ reacts without the $Li_2+xFe_1+xS_2$ stage. In this study, this result is explained by the difference in electrochemical reaction mechanism. The as-received $FeS_2$ has a larger radius than the ball-milled $FeS_2$. Therefore, the lithium ion has to diffuse into the $FeS_2$ unreacted core, and $Li_2+xFe_1+xS_2$, the transition reaction product of as-received $FeS_2$, is formed during this stage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.443-447
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• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• Elastomers and Composites
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• v.46 no.1
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• pp.29-36
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• 2011

The term 'thermal insulating materials' describes a class of materials which can improve the thermal efficiency by reducing the thermal conduction, convention and radiation between the inside and outside of the system. As a thermal insulating material, numerous industrial applications are possible including the automobile, aerospace, aviation, and petrochemical. Especially, the silica aerogel, with their superior thermal insulating behavior, has been widely used as thermal insulating materials. Because the mechanical properties of the silica aerogel cannot meet the industrial demand, use of the silica aerogel is limited. This article aims to review the thermal insulating materials and silica aerogel, and to introduce the silica aerogel/polymer composites.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.139-139
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• 1999

다이아몬드는 지구상에서 가장 단단한 물질로 잘 알려져 있을 뿐만 아니라 공업적 측면에서 볼 때, 여러 가지 특출한 성질들을 동시에 지니고 있다. 인장강도, 압축강도, 탄성계수 등 기계적 특성이 우수하고 넓은 광투과성과 내열, 내화학, 내방사성을 지니고 있으며, 열전도율이 높고 전기적으로 절연체이다. 또한 hole이동도가 높고 도핑에 의해서 반도체적 특성을 나타낸다. 이와 같이 매우 뛰어난 성질을 공업적으로 응용하기 위하여 이전부터 많은 연구가 행해져 왔으며, 1980년대에 들어와 박막이나 코팅 형태로의 합성이 가능한 기상합성법이 큰 발전을 보임으로써 다이아몬드의 우수한 특성을 여러 분야에서 폭넓게 응용할 수 있게 되었다. 특히 마찰 응용분야에 최적의 재료로 추천되고 있다. 지금도 Epitaxial 다이이몬드를 기지 위에 성장시키고 다결정질박막을 여러 가지 비다이아몬드(Si, W, Mo 등) 기지 위에 성장시키는 연구가 계속되고 있으며 공구강 위엥 경질코팅으로써 한층 개선된 다이아몬드박막 제조를 위한 수많은 연구노력들이 집중되고 있다. 그러나 일반탄소강에 다이아몬드박막을 성장시키기 위한 많은 노력들은 크게 바람직하지 않은 non-diamond carbon(black carbon or graphitic soot)의 형성 때문에 방해를 받고 있다. 계면에서 이들의 형성은 증착된 다이아몬드박막과 금속기지의 저조한 밀착력을 나타내게 된다. 이외 같이 다이아몬드박막의 응용을 위하여 다이아몬드피막에 요구되는 중요한 조건은 기지에 대해서 강한 밀착력을 나타내는 것이며, 동시에 상대물에 대하여 낮은 마찰계수를 가져야 한다. 그러나 다이아몬드와 금속기지는 서로 다른 열챙창계수(각각 0.87$\times$10-6K-1, 12$\times$10-6K-1)의 차이로 인하여 밀착력이 현저히 떨어진다는 단점으로 인해 산업화에 많은 제약을 받아왔다. 이러한 문제점을 해결하기 위하여 본 연구에서는 다이아몬드박막과 금속기지 사이에 중간층을 이용하는 방법을 제안하였다. 이러한 시도는 일반적으로 중간층 형성 금속인 Ti 또는 TiN 등이 적용되었으나 원하는 결과를 얻지 못하였다. 즉 carbon과 Fe의 상호확산, non-diamond carbon상의 형성 그리고 열잔류응력을 완화시키고 일반탄소강 위에 다이아몬드박막을 형성시켜 우수한 밀착력을 얻기 위한 목적에 미흡하였던 것이다. 이에 중간층으로 Cr 또는 Cr계 화합물 박막을 이용하였는 바, 이 중간층을 이용한 결과 우수한 밀착력을 나타내는 다이아몬드박막을 얻었으며 열적, 구조저으로 모재와 다이아몬드에 적합한 결과를 얻을 수 있었다. 본 연구에 의해 얻어진 결과들은 재료 가공을 위하여 높은 경도와 내마모성등이 요구되는 절삭공구나 금형의 수명 향항에 크게 기여할 것이며 산업적으로 큰 응용이 기대된다.

• Journal of Navigation and Port Research
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• v.31 no.10
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• pp.825-831
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• 2007

The use of high-strength aluminum alloys for ship and offshore structure generally has many benefits compared to the structural steels. These materials are used widely in a variety of fields, especially in the hull and deck of high speed craft, box-girder of bridges, deck and side plates of offshore structure. The structural weight can be reduced using these aluminum structure, which can enable high speed The characteristics of stress-strain relationship of aluminum structure are fairly different from the steel one, because of the influence of Heat Affected Zone(HAZ) by the welding processing. The HAZ of aluminum is much wider than that of steel with its high heat conductivity. In this paper, the ultimate strength characteristics of aluminum stiffened panel subjected to axial loading, such as the relationship between extent of HAZ and the behavior of buckling/ultimate strength, are investigated through the Finite Element Analysis with varying its range.