Effect of carbon and boron addition on sintering behavior and mechanical properties of hot-pressed SiC

카본 및 보론 첨가가 탄화규소 열간 가압 소결거동 및 기계적 특성에 미치는 영향

  • Ahn, Jong-Pil (Technology Application & Diffusion Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Chae, Jae-Hong (Technology Application & Diffusion Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Kyoung-Hun (Technology Application & Diffusion Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Park, Joo-Seok (Technology Application & Diffusion Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Dae-Gean (Technology Application & Diffusion Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Hyoung-Sun (School of Materials Engineering, Inha University)
  • 안종필 (요엽(세라믹)기술원 기술응용.확산센터) ;
  • 채재홍 (요엽(세라믹)기술원 기술응용.확산센터) ;
  • 김경훈 (요엽(세라믹)기술원 기술응용.확산센터) ;
  • 박주석 (요엽(세라믹)기술원 기술응용.확산센터) ;
  • 김대근 (요엽(세라믹)기술원 기술응용.확산센터) ;
  • 김형순 (인하대학교 신소재공학부)
  • Published : 2008.02.29

Abstract

SiC has an excellent resistance to oxidation and corrosion, high temperature strength and good thermal conductivity. However, it is difficult to density because of its highly covalent bonding characteristics. Hot-press sintering process was applied to fabricate fully densified SiC ceramics with carbon and boron addition as a sintering additive. The addition of carbon improved the mechanical properties of SiC because it could induce a fine and homogeneous microstructure by the suppression of abnormal growth of SiC grain. Also, the addition of carbon could control the phase transformation of SiC. The phase transformation of 6H to 4H increased with sintering temperature but the addition of carbon decreased that kind of phase transformation.

탄화규소(SiC)는 산화저항성, 내식성, 고온 강도 및 열전도 특성 등의 기계적 특성이 매우 우수한 재료로 알려져 있지만, 강한 공유결합성으로 인하여 그 소결이 매우 어려운 재료이다. 본 연구에서는 치밀한 탄화규소 소결체를 제조하기 위하여 카본 및 보론을 소결 첨가제로하여 열간 가압 소결법을 적용하여 탄화규소 소결체를 제작하여 그 특성을 평가하였다. 카본의 첨가는 탄화규소의 소결을 촉진하는 역할을 하여 비정상 입성장을 억제하기 때문에 미세하고 균일한 미세구조를 형성하였기 때문에 탄화규소 소결체의 기계적 특성을 향상시키는 것을 확인 할 수 있었다. 또한 차본의 첨가는 소결 중 보론의 첨가에 의해 발생하는 탄화규소의 6H 구조에서 4H 구조로의 상전이를 억제함을 알 수 있었다.

Keywords

References

  1. S. Prochazka, "Effect of boron and arbon on sintering of SiC", J. Am. Ceram. Soc. 58(1-2) (1975) 72 https://doi.org/10.1111/j.1151-2916.1975.tb18990.x
  2. A.R. Verma and P. Krishna, "Polymorphism and polytypism in crystals", Wiley, New York, (1966) XIX+3415
  3. R.A. Alliegro, L.B. Coffin and J.R. Tinklepsugh, "Pressure sintered silicon carbide", J. Am. Ceram. Soc. 39(11) (1956) 386 https://doi.org/10.1111/j.1151-2916.1956.tb15609.x
  4. C. Greskovich and I.H. Rosolowski, "Sintering of covalent solids", J. Am. Ceram. Soc. 59 (1976) 336 https://doi.org/10.1111/j.1151-2916.1976.tb10979.x
  5. S. Prochazka, "The role of boron and carbon in the sintering of silicon carbide", in special ceramics 6, Brit. Ceram. Res. Assoc. (1975) 171
  6. W. Rijswijk and D. Shanefiled, "Effect of carbon as a sintering aid in silicon carbide", J. Am. Ceram. Soc. 73(1) (1990) 148 https://doi.org/10.1111/j.1151-2916.1990.tb05109.x
  7. W.J. Clegg, "Role of carbon in the sintering of boron-doped silicon carbide", J. Am. Ceram. Soc. 83(5) (2000) 1039 https://doi.org/10.1111/j.1151-2916.2000.tb01327.x
  8. L. Stobierski and A. Gubernat, "Sintering aids in silicon carbide densifications", Bulletin of the Polish Academy of Science, Technical Sciences 47(4) (1999) 411
  9. A. Gubernat, "The role of boron and carbon in sintering of silicon carbide", PhD Thesis, University of mining and metallurgy, Cracow (2001)
  10. H. Suzuki and T. Hase, "Boron transport and charge of lattice parameter during sintering of $\beta$-SiC", J. Am. Ceram. Soc. 63(5-6) (1980) 349 https://doi.org/10.1111/j.1151-2916.1980.tb10741.x
  11. T.F. Page, "The physics and chemistry of carbide, nitride and boride", Edited by R. Freer, Kluwer Acad. Publishers, Netherlands (1990) 197
  12. J.-L. Huang, A.C. Hurford, R.A. Cutler and A.V. Virkar, "Sintering behavior and properties of SiAlON ceramics", J. Mater. Sci. Lett. 21 (1986) 1448 https://doi.org/10.1007/BF00553287
  13. W.F. Knippenberg, "Growth phenomena of silicon carbide" Philips Res. Rep. 18(3) (1963) 161
  14. Y. Inomata, M. Mitomo, Z. Inoue and H. Tanaka, "Thermal stability of the silicon carbide of the basic structures of SiC" J. Ceram. Soc. Jpn. 77(4) (1969) 130
  15. Y.-W. Kim and J.-G. Lee, "Reactive sintering of SiC", J. Kor. Ceram. Soc. 20(2) (1983) 115