Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Distance between source and substrate and growth mode control in GaN nanowires synthesis

Source와 기판 거리에 따른 GaN nanowires의 합성 mode 변화 제어

  • Shin, T.I. (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Lee, H.J. (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Kang, S.M. (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Yoon, D.H. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
  • 신동익 (성균관대학교 신소재공학과) ;
  • 이호준 (성균관대학교 신소재공학과) ;
  • 강삼묵 (성균관대학교 신소재공학과) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2008.02.29
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Abstract

We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.

GaN nanowires는 수평 VPE법으로 합성 되었다. 본 실험에서는 source와 기판과의 거리가 합성된 GaN nanowires의 형상에 미치는 영향에 대하여 실험하였다. GaN nanowires는 $950^{\circ}C$ 온도에서 Ar 과 $NH_3$ 가스가 각각 1000, 50 sccm 의 유량에서 합성되었다. 합성된 GaN nanowires의 단면형태는 삼각형의 모양을 가졌으며, GaN nanowires의 길이는 200에서 500 nm 정도 였다. 합성된 GaN nanowires의 모양은 FESEM 으로 확인하였고, XRD 분석을 통하여 그 구조가 wurzite 구조인 것을 확인하였다. 또한, HRTEM 사진과 SAED 패턴을 통하여 합성된 GaN nanowires의 표면과 구조를 분석하였다. 성장된 GaN nanowires의 광학적 특성은 PL분석을 통하여 이루어졌다.

Keywords

References

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